Abstract: An information storage medium according to an embodiment of this invention includes a management area for recording management information, and a data area for recording content data. The content data recorded in the data area contains a plurality of object data, each object data contains a plurality of data units, each data unit contains a plurality of packs, each pack contains at least one packet, the packet contains at least one transport stream packet, the management information recorded in the management area contains program chain information which manages the playback order of data contained in the object data, the program chain information contains cell information, and the cell information contains information that specifies an object to be played back.

Abstract: A manufacturing method of this invention improves nonuniformity in film thickness of a circuit element formation region produced due to a poor flatness of a semiconductor substrate in the manufacture of a semiconductor substrate having a dielectric isolating structure. Mirror-polished surfaces of first and second semiconductor substrates are opposed and bonded to each other so as to sandwich a dielectric having a predetermined thickness, and the first semiconductor substrate is ground from the surface opposite to the adhesion surface to have a predetermined thickness with reference to the dielectric. An impurity is doped in the first semiconductor substrate to form a high-concentration impurity layer having an impurity concentration corresponding to a predetermined low-concentration impurity layer having a predetermined thickness thereon, thereby constituting a circuit element region.