Patents Assigned to Kabushiki Kaisha Tohiba
  • Publication number: 20130231946
    Abstract: A diagnostic reading report generation supporting system includes a first storage, a second storage, a first extraction unit a second extraction unit and a transmission unit. The first storage stores a medical image. The second storage stores: user identification information on a diagnostic reading requester, examination information, fixed phrase name information, and fixed phrase character information. The first extraction unit extracts a medical image, from the first storage. The second extraction unit extracts a fixed phrase name information item corresponding to a required user identification information item and examination information item, from the second storage.
    Type: Application
    Filed: March 1, 2013
    Publication date: September 5, 2013
    Applicants: Toshiba Medical Systems Corporation, Kabushiki Kaisha Tohiba
    Inventors: Masato SHIBUYA, Iwao Goto, Tomoko Kazuno
  • Patent number: 8154103
    Abstract: A semiconductor device has a substrate, a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, a body section connected with the source region, penetrating through the first insulating layer, the gate electrode and the second insulating layer, and containing a void, a gate insulating film surrounding the body section, and formed between the body section and the gate electrode, and a drain region connected with the body section.
    Type: Grant
    Filed: December 17, 2010
    Date of Patent: April 10, 2012
    Assignee: Kabushiki Kaisha Tohiba
    Inventors: Hiroyasu Tanaka, Hideaki Aochi, Ryota Katsumata, Masaru Kidoh, Yoshiaki Fukuzumi, Masaru Kito, Yasuyuki Matsuoka
  • Patent number: 8143122
    Abstract: A nonvolatile semiconductor memory includes a first and a second diffusion layer regions, a floating gate electrode disposed, with a gate insulating film interposed therebetween, on a channel region between the first and second diffusion layer regions, and a control gate electrode serving as a word line and disposed on the floating gate electrode with an interelectrode insulating film interposed therebetween. The interelectrode insulating film covers whole side portions of the floating gate electrode located in a direction different from a direction in which the word line extends, and the control gate electrode covers the side portions of the floating gate electrode located in the direction different from the direction in which the word line extends.
    Type: Grant
    Filed: May 17, 2010
    Date of Patent: March 27, 2012
    Assignee: Kabushiki Kaisha Tohiba
    Inventor: Takayuki Toba
  • Patent number: 7075369
    Abstract: Variable gain amplifier and a LSI including the variable gain amplifier that expands an output voltage range or control voltage range without increasing power consumption. The variable gain amplifier includes a voltage-current conversion circuit; a variable gain unit; and a voltage output unit. The voltage-current conversion circuit outputs a first positive current and a first negative current in proportion to an input voltage. The variable gain unit inputting the first positive current and the first negative current controlled by a control signal and outputs four output currents including a second positive current, a third positive current, a second negative current and a third negative current. The voltage output unit inputs either the second positive current and the second negative current or the third positive current and the third negative current Iop3, and outputs a positive output voltage and a negative output voltage.
    Type: Grant
    Filed: June 28, 2004
    Date of Patent: July 11, 2006
    Assignee: Kabushiki Kaisha Tohiba
    Inventor: Kyoichi Takenaka