Abstract: In a gallium nitride crystal, a nanovoid density in the crystal is less than 1×105 [cm?2]. A crystal growth apparatus is an apparatus for manufacturing a gallium nitride crystal, wherein a member having a B concentration of less than 1 ppm at least at a surface part is used as a member used at a part where a temperature is 500° C. or higher (high-temperature member) among members exposed to a crystal growth space. When such a crystal growth apparatus is used, a gallium nitride crystal wherein a nanovoid density in the crystal is less than 1×105 [cm?2] is obtained.