Abstract: A fixing structure for a welding electrode and a welding head is shown which enable improvement of durability of a welding electrode, improvement of work efficiency in welding, and a reduction of time required for welding and also which make it possible to execute welding for an extended time with high reliability. In the fixing structure, a fixed section of a welding electrode is inserted via a thermally conductive material into an inserting section of a fixing base and a peripheral surface of the fixed section of the welding electrode is uniformly contacted to the fixing base to affix the welding electrode to the fixing base.

Abstract: There is provided a semiconductor circuit for arithmetic processing and an arithmetic processing method that can increase the rate of processing data and reduces the area of a circuit by suppressing wasteful processing. There is provided a computing unit for computing input data, and this computing unit computes input digit data within a computation time unit and outputs a computation result representing a result obtained by the computation, and if a carry is generated in the computation a computation circuit (adders 1–3) for outputting carry data representing this carry, and delay means (memory 4) for delaying the computation result from the computation circuit by one computation time unit, are provided.

Abstract: A fixing structure for a welding electrode and a welding head is shown which enable improvement of durability of a welding electrode, improvement of work efficiency in welding, and a reduction of time required for welding and also which make it possible to execute welding for an extended time with high reliability. In the fixing structure, a fixed section of a welding electrode is inserted via a thermally conductive material into an inserting section of a fixing base and a peripheral surface of the fixed section of the welding electrode is uniformly contacted to the fixing base to affix the welding electrode to the fixing base.

Abstract: There is provided a semiconductor circuit for arithmetic processing and an arithmetic processing method that can increase the rate of processing data and reduces the area of a circuit by suppressing wasteful processing. There is provided a computing unit for computing input data within a computation time unit and outputs a computation result representing a result obtained by the computation, and if a carry is generated in the computation a computation circuit (adders 1-3) for outputting carry data representing this carry, and delay means (memory 4) for delaying the computation result from the computation circuit by one computation time unit, are provided.

Abstract: The plasma process apparatus is capable of uniformalizing the density of a plasma generated thereby and a self-bias voltage associated therewith. This apparatus include two parallel plates electrodes I and II, one of electrodes I and II being configured for carrying a substrate to be plasma processed. The apparatus further includes a magnetic field applying means for applying a magnetic field horizontal and one-directional to a surface of the substrate. An additional element of the apparatus is a single auxiliary electrode positioned around the periphery of electrode I and having high-frequency power applied thereto. The alignment of the electrodes is such that they define a space where a plasma for use in processing the substrate is to be excited.

Abstract: A method for forming an oxidation-passive layer having high corrosion resistance to highly oxidizing materials such as ozone; a stainless steel and a titanium base alloy having corrosion resistance to an ozone containing fluid; and a fluid containing part, a process apparatus, and a fluid feed/discharge system made by using the same. The method comprises the steps of heat-treating the surface of a stainless steel or titanium-base alloy having an Al content of 0.5 percent by weight to 7 percent by weight either at 300° C. to 700° C. in a mixed gas atmosphere composed of an inert gas and 500 ppb to 1 percent H2O gas or 1 ppm to 500 ppm oxygen gas, or alternatively at 20° C. to 300° C. in a mixed gas atmosphere composed of an oxygen gas and at least 100 ppm ozone gas to form an oxidation-passive layer containing an aluminum oxide or a titanium oxide.

Abstract: The present invention makes possible the recycling of exhaust has components in a manufacturing process by cooling, liquefaction, and recovery, and to use toxic or useful gases without disposal, and to dramatically reduce the frequency of exhaust system maintenance by combining such a recovery method with a vacuum exhaust system.

Abstract: A cleaning method capable of processing at room temperatures without conducting heating, uses little chemicals and water, and does not require special devices or materials. The chemical cleaning processes and rinse processes employ pure water or ultrapure water in a semiconductor wet cleaning process, rinse water or chemicals which suppresses formation of surface oxide films, removes particles and prevent their redeposition, and aids in the hydrogen termination of the silicon atoms. The cleaning method of the resent invention includes cleaning which is conducted using pure water containing ozone, cleaning conducted using a cleaning liquid containing HF, H2O, and surfactant, while applying vibration having a frequency of 500 kHz or more, cleaning conducted using pure water containing ozone, cleaning conducted using a cleaning liquid containing HF and H2O in order to remove oxide films, and cleaning which is conducted using pure water.

Abstract: A washing apparatus and a washing method, which further improve a washing effect and enable highly clean washing with a small amount of chemical. Also, it is an object of the invention to provide a washing apparatus of high throughput involving rapid switching of various chemicals of high responsibility and capable of performing a series of washing operations at high speed. The washing apparatus comprises undiluted cleaning liquid injection means for injecting an undiluted solution or undiluted gas of a cleaning liquid into a ultrapure water channel to make a cleaning liquid of a desired concentration, cleaning liquid supplying means connected to the super demineralized water channel for simultaneously supplying front and rear surface of a substrate with a cleaning liquid adjusted to a desired concentration or a ultrapure water, means for superposing ultrasonic wave or high frequency sound waves of 0.

Abstract: The present invention provides a welding method for materials to be welded which are subjected to fluoride passivation treatment, and a fluoride passivation retreatment method, wherein, when fluoride passivation retreatment was conducted after welding, there is no generation of particles or dust, and superior resistance is provided to fluorine system gases.

Abstract: A welding method for materials to be welded which are subjected to fluoride passivation treatment, and a fluoride passivation retreatment method, wherein, when fluoride passivation retreatment is conducted after welding, there is no generation of particles or dust. The method provides superior resistance to fluorine system gases. During fluoride passivation treatment, hydrogen is added to the gas (the back shield gas) flowing through the materials to be welded. In one embodiment of the welding method, the thickness of the fluoride passivated film in a predetermined range from the butt end surfaces of the materials to be welded is set to 10 nm or less, followed by subsequent welding. Furthermore, the fluoride passivation retreatment method, includes the steps of heating at least the welded parts following welding and flowing a gas containing fluorine gas in the interior portion of the parts.

Abstract: A semiconductor arithmetic circuit including 2 MOS (Metal Oxide Semiconductor) type transistors, the source electrodes of which are connected to one another and having gate electrodes connected to a signal line having a predetermined potential via switching elements, and having at least two input electrodes capacitively coupled with the gate electrodes, wherein a first voltage and second voltage are applied to, respectively, a first and second input electrode of a first MOS transistor. An input signal voltage is applied to both a first and second input electrode of a second MOS transistor, and then a second switching element is caused to conduct, and the gate electrodes are set to the signal line potential, then the second switching element is isolated and the gate electrodes are placed in an electrically floating state.

Abstract: Charge transfer amplifier circuit which is capable of canceling fluctuations in the element characteristics thereof and which conducts highly accurate voltage amplification without the use of a stationary current, and provides a voltage comparator which may be applied to a highly accurate A/D converter which has low power consumption. The charge transfer amplifier circuit is provided with a MOS transistor, a first capacity and a second capacity which are effectively connected to, respectively, the source electrode and the drain electrode of the MOS transistor, a mechanism for setting the region between the terminals of the first capacity and the region between the terminals of the second capacity, respectively, to appropriate predetermined potential differences, and for releasing these, and a mechanism for appropriately externally altering the potential difference between the gate and the source of the MOS transistor. The first capacity is set so as to be larger than the second capacity.

Abstract: An apparatus for injecting constant quantitative chemicals which is capable of injecting a chemical solution into ultra pure water without generating particulate contamination, and furthermore, the injection interval of the chemical solution to the cleaning nozzle is controlled in units of seconds within a range of a few seconds to 10 or more seconds, and the switching of the type of chemical solution and the changeover to ultra pure water cleaning can be conducted in a short period of time of approximately 1 second.

Abstract: A cleaning solution and cleaning method are provided which: (1) make treatment at room temperature possible, and do not require heating, (2) use little chemicals and water, (3) do not require specialized apparatuses, and moreover, (4) do not require the use of specialized chemicals. The cleaning solution of the present invention comprises pure water containing 20 ppb-100 ppb of oxygen and 2 ppb or more of nitrogen. Furthermore, the cleaning solution may comprise electrolytically ionized water containing OH.sup.- and containing 20 ppb-100 ppb of oxygen. In the cleaning method of the present invention, the cleaning of a material to be cleaned is conducted in a cleaning solution comprising pure water containing 20 ppb-100 ppb of oxygen and 2 ppb-15 ppm of nitrogen, while applying ultrasound having a frequency of 30 kHz or more.

Abstract: An abrasive composition which can realize chemical-mechanical polishing superior in polishing speed and polishing uniformity.The abrasive composition comprises abrasive grains, isopropyl alcohol, and water. Grain sizes of the abrasive grains are preferably 30 to 250 nm, and the abrasive grains are preferably SiO.sub.2. Further, it is preferable that contents of the abrasive grains and isopropyl alcohol are 5 to 30 wt % and 1 to 15 wt %, respectively. The abrasive composition of the present invention is characterized in that it is deaerated.