Abstract: In accordance with one embodiment, a printing system comprises a memory, a processor and an interface. The processor rewrites the first information contained in the print data stored in the memory and designating a sheet stacking section at an end of a conveyance path of an image forming apparatus. The interface sends the rewritten print data to the image forming apparatus.

Abstract: There is provided a method of manufacturing a semiconductor device, including forming a structure including a first layer containing Si and a metal oxide layer in contact with the first layer, the metal oxide layer having a dielectric constant higher than that of silicon oxide, and heating the structure in an atmosphere containing He and/or Ne.

Abstract: An electric power system protection and control system including a plurality of protection controllers, each for executing protection and control of an electric power system by inputting a status quantity of the electric power system and for converting the status quantity into digital data, and a display controller connected to each of the protection controllers via a communication network, for displaying and controlling an operation and status of each of the protection controllers for monitoring. Each of the protection controllers includes a core area not directly connected to the communication network for executing the protection and control of the electric power system, and a web area for sending and receiving a program module to and from the display controller and another one of the protection controllers or sending an information in the core area to the program module via the communication network, respectively.

Abstract: An electronic device which includes, a couple of first conduction regions which are capable of confining carriers, a second conduction region having a higher energy level than those of the first conduction regions, and a first electrode for impressing a voltage on the first conduction regions, wherein when a voltage is impressed via the first electrode between the couple of first conduction regions, carriers are caused to move due to a tunneling effect from one of the first conduction regions via the second conduction region to the other of the first conduction regions, and when the voltage impressed between the couple of first conduction regions is removed, carriers are confined mainly in the one of the first conduction regions.