Abstract: A machine readable information storage medium, a reproducing method and apparatus which reproduces data from the storage medium, and a recording method and apparatus for recording data on the storage medium. The information storage medium includes a control area which stores within a data structure information usable by the recording or reproducing apparatus to record or reproduce the data on or from the storage medium. The information stored within the data structure includes a version corresponding to a specification, a revision number of recording speed, and an extended part version field.

Abstract: According to one embodiment, an information processing apparatus includes a recommendation module and a controller. The recommendation module recommends a display mode using at least one of a display and an external display, based on a first information associated with the apparatus, a second information associated with the external display and a rule managed for deriving a display mode. The controller sets the apparatus in the recommended display mode, when an image is displayed in the recommended display mode. The controller sets the apparatus in a display mode other than the recommended display mode and corrects the managed rule, when an image is displayed in a display mode other than the recommended display mode.

Abstract: Provided are methods of forming nonvolatile memory elements including resistance switching layers. A method involves diffusing oxygen from a precursor layer to one or more reactive electrodes by annealing. At least one electrode in a memory element is reactive, while another may be inert. The precursor layer is converted into a resistance switching layer as a result of this diffusion. The precursor layer may initially include a stoichiometric oxide that generally does not exhibit resistance switching characteristics until oxygen vacancies are created. Metals forming such oxides may be more electronegative than metals forming a reactive electrode. The reactive electrode may have substantially no oxygen at least prior to annealing. Annealing may be performed at 250-400° C. in the presence of hydrogen. These methods simplify process control and may be used to form nonvolatile memory elements including resistance switching layers less than 20 Angstroms thick.

Abstract: Provided are resistive random access memory (ReRAM) cells including resistive switching layers and thermally isolating structures for limiting heat dissipation from the switching layers during operation. Thermally isolating structures may be positioned within a stack or adjacent to the stack. For example, a stack may include one or two thermally isolating structures. A thermally isolating structure may directly interface with a switching layer or may be separated by, for example, an electrode. Thermally isolating structures may be formed from materials having a thermal conductivity of less than 1 W/m*K, such as porous silica and mesoporous titanium oxide. A thermally isolating structure positioned in series with a switching layer generally has a resistance less than the low resistance state of the switching layer. A thermally isolating structure positioned adjacent to a switching layer may have a resistance greater than the high resistance state of the switching layer.

Abstract: According to an embodiment, a retention time of each block group is managed and a degree of wear of each block is managed. A free block allocated to each block group is determined based on the retention time of each block group and the degree of wear of each block.

Abstract: According to one embodiment, a driving device applies an ejection pulse signal that deforms a partition in such a way that an ink drop is ejected from a nozzle and an auxiliary pulse signal that deforms the partition to such an extent that an ink drop is not ejected from the nozzle, as a drive signal for providing a potential difference between electrodes, to an inkjet head at different timings so that the two pulse signals are not applied simultaneously. A constraint on output of the auxiliary pulse signal is significantly relaxed.

Abstract: An X-ray imaging apparatus includes: a C-arm formed in a C-shaped arc form, and being capable of sliding in an arc direction; an X-ray generator held on one end side of the C-arm; an X-ray detector held on the other end side of the C-arm while being opposed to the X-ray generator; and a first rotation axis which is fixed at a fixation portion to a ceiling portion of a room where the C-arm is installed, and which enables the C-arm to be rotated about an axial center of the first rotation axis, the axial center being a normal line extending in a vertical direction from the center of the fixation portion.

Abstract: A machine readable information storage medium, a reproducing method and apparatus which reproduces data from the storage medium, and a recording method and apparatus for recording data on the storage medium. The information storage medium includes a control area which stores within a data structure information usable by the recording or reproducing apparatus to record or reproduce the data on or from the storage medium. The information stored within the data structure includes a version corresponding to a specification, a revision number of recording speed, and an extended part version field.

Abstract: According to one embodiment, an arithmetic circuit includes follows. The arithmetic unit performs an arithmetic operation including addition and multiplication to generate a first value of (n+m) bits. The rounding preprocessor performs an OR operation on lower (m?k) bits of the first value to generate a second value of 1 bit. The register stores a third value of (n+k+1) bits obtained by concatenating upper (n+k) bits of the first value and the second value. The rounding postprocessor calculates a carry bit value of 1 bit from a most significant bit of the third value and lower (k+1) bits of the third value, and adds the carry bit value to upper n bits of the third value.

Abstract: In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.

Abstract: According to one embodiment, an oscillation layer of a spin torque oscillator for use in a magnetic head includes a stack of first and second metal films. The first metal film is formed by repetitively stacking a combination of first and second magnetic layers twice or more. The thickness of the first metal film is 0.4 to 5.0 nm. The first magnetic layer has a bcc structure and contains Fe. The second magnetic layer contains Co. The second metal film is made of Cu.

Abstract: A light emitting device and a method for manufacturing the same are provided. The light emitting device includes: a first substrate having electrical conductivity; a foundation layer; a bonded metal layer configured to bond one major surface of the foundation layer to the first substrate; a mask layer provided on the other major surface of the foundation layer, having a window, and made of an insulator; and a multilayer body selectively provided on the foundation layer exposed to the window, and including a light emitting layer.

Abstract: A machine readable information storage medium, a reproducing method and apparatus which reproduces data from the storage medium, and a recording method and apparatus for recording data on the storage medium. The information storage medium includes a control area which stores within a data structure information usable by the recording or reproducing apparatus to record or reproduce the data on or from the storage medium. The information stored within the data structure includes a version corresponding to a specification, a revision number of recording speed, and an extended part version field.

Abstract: A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.

Abstract: A gradient index liquid crystal optical apparatus according to an embodiment includes: a first substrate having a first face; a second substrate having a second face opposed to the first face of the first substrate; a liquid crystal layer sandwiched between the first substrate and the second substrate; a plurality of first electrodes provided on the first face of the first substrate, and arranged along a first direction; a plurality of second electrodes provided on the first face of the first substrate to correspond to the first electrodes, the plurality of second electrodes being arranged along the first direction; a plurality of third electrodes provided on the first face of the first substrate and arranged along the first direction; and a fourth electrode provided on the second face of the second substrate.

Abstract: According to one embodiment, a apparatus includes a first module which stores update information includes position information indicating an update position in the data file in a first storage and data to be updated in a second storage, such that update information items includes the update information are stored in contiguous storage areas of the second storage in the order of request of each of the update information items when the data file is requested to be updated, and a second module which stores the update information items stored in the second storage in free space having contiguous addresses of a third storage, in the order of storing in the second storage, if an amount of the update information items in the second storage exceeds a set volume.

Abstract: According to one embodiment, a first processing module adds, to a first queue, output sound data output from a first task, with a time stamp attached thereto. A second processing module adds, to a second queue, input sound data received from a microphone, with a time stamp attached thereto. A controller fetches first output sound data as reference data from the first queue, the first output sound data having a time stamp whose time difference from a time stamp of first input sound data in the second queue falls within a predetermined range. An echo canceller performs echo cancelling processing to cancel an echo component in the first input sound data based on the reference data.

Abstract: A secondary battery includes a positive electrode, a negative electrode containing a metal compound having a lithium ion absorption potential of 0.2V (vs. Li/Li+) or more, a separator and a nonaqueous electrolyte. The separator is provided between the positive electrode and the negative electrode. The separator comprises cellulose fibers and pores having a specific surface area of 5 to 15 m2/g. The separator has a porosity of 55 to 80%, and a pore diameter distribution having a first peak in a pore diameter range of 0.2 ?m (inclusive) to 2 ?m (exclusive) and a second peak in a pore diameter range of 2 to 30 ?m.

Abstract: According to one embodiment, a receiving unit is configured to receive a notification of an application for operation permission based on an operation input from a first device, and a transmitting unit is configured to make a power saving command for a second device based on the application for operation permission, to transmit a notification of an operation start permission to the first device after receiving a response of a power saving operation start from the second device, and to make a notification of an operation restart permission for the second device if a certain period has elapsed after receiving a notification indicating that an operation has been ended from the first device.

Abstract: A semiconductor device includes a first transistor connected to an internal voltage terminal and a first node at which a first resistance unit is connected. The first resistance unit includes a resistor connected between the first node and a node from which a monitoring voltage is provided for controlling the first transistor. This resistance unit also includes a first resistance adjustment unit connected in parallel with the first resistor. Also included is a second resistance unit having a third resistor connected between the monitor node and a second node which is connected to a ground potential and a second resistance adjustment unit connected in parallel with the third resistor. A comparator comparing the monitor node voltage to a reference is provided with an output terminal connected the first transistor. Also included is a control circuit to control the resistance adjustment units.