Patents Assigned to KALARK NANOSTRUCTURE SCIENCES INC.
  • Patent number: 12781343
    Abstract: A method and system are provided for the low temperature deposition of tungsten (W) and W-based thin films through the planned and engineered ex-situ or in-situ creation of vapor phase metastable clusters or metastable complexes to achieve precise film conformality, composition, morphology, structure, and thickness. The tungsten based thin film deposition techniques include chemical vapor deposition (CVD), atomic layer deposition (ALD), pulsed CVD, molecular layer deposition (MLD), self-assembled monolayer (SAM) deposition, and Click chemistry deposition (CCD).
    Type: Grant
    Filed: December 23, 2025
    Date of Patent: November 3, 2026
    Assignee: KALARK NANOSTRUCTURE SCIENCES INC.
    Inventors: Barry C. Arkles, Alain E. Kaloyeros
  • Patent number: 12398469
    Abstract: Thin film deposition procedures and systems are provided that consist of hybrid growth processes or integrated physical-chemical deposition processes that combine and unite the advantages of physical (i.e., sputtering) and chemical (i.e., CVD, ALD, MLD, SAM, and/or Click) deposition processes, while minimizing or eliminating their individual shortcomings and challenges. These methods and techniques therefore provide a common and shared processing platform that employs both chemical and physical reactions simultaneously or sequentially to grow high quality conformal thin films with programmable composition and controlled properties.
    Type: Grant
    Filed: November 22, 2024
    Date of Patent: August 26, 2025
    Assignee: KALARK NANOSTRUCTURE SCIENCES INC.
    Inventors: Alain E. Kaloyeros, Barry C. Arkles