Abstract: An optical amplifier is disclosed comprising a signal semiconductor optical amplifier having a waveguide, forming at least part of a signal path between an input and an output, extending along a signal active region for amplification of a signal. The amplifier also includes a control active region of semiconductor material having a gain which is controllable independently from the gain of the signal active region. The amplifier also includes a laser cavity containing both the signal active region and the control active region and being capable of clamping the gain of the signal active region, and the control active region is arranged not to amplify a signal in the signal path within a predetermined signal band.

Abstract: A semiconductor optical device comprises an active waveguide having a tapered portion, and a passive waveguide extending beyond the end of the active waveguide and optically coupled to the tapered portion of the active waveguide. The passive waveguide beyond the end of the active waveguide supports an optical mode of larger size than the optical mode supported by the active waveguide. The tapered portion of the active waveguide is truncated and the separation between the active waveguide and the passive waveguide is greater than in previously known devices in order to minimize or at least reduce the truncation loss at the truncation.

Abstract: A semiconductor optical amplifier comprising an active gain region of the (In, Ga)(As, N) system is proposed, together with the use of (Ga,In)(As,N) as the base material for the fabrication of an SOA, and a semiconductor optical amplifier comprising (Ga,In)(As,N) as the base material. The N content of the (In,Ga)(As,N) can be varied along a dimension of the active region in the direction of propagation of light signals therein, to create a varying bandgap such as for mode expanders. The active region can be supplied by a source of electrical bias which is applied in segments along the dimension of the active region, the segments being capable of independent variation. This should allow channel equalisation of WDM signals to be performed dynamically. This scheme could also be used to equalise device parameters such as differential gain, saturation output power and linewidth enhancement factor across the amplification bandwidth.

Abstract: A semiconductor optical amplifier comprising an active gain region of the (In, Ga)(As, N) system is proposed, together with the use of (Ga, In)(As, N) as the base material for the fabrication of an SOA, and a semiconductor optical amplifier comprising (Ga, In)(As, N) as the base material. The N content of the (In, Ga)(As, N) can be varied along a dimension of the active region in the direction of propagation of light signals therein, to create a varying bandgap such as for mode expanders. The active region can be supplied by a source of electrical bias which is applied in segments along the dimension of the active region, the segments being capable of independent variation. This should allow channel equalisation of WDM signals to be performed dynamically. This scheme could also be used to equalise device parameters such as differential gain, saturation output power and linewidth enhancement factor across the amplification bandwidth.

Abstract: A lasing structure comprises a distributed feedback grating associated with the active region, the grating defined by a periodic structure of quantum well intermixing. This quantum well intermixing (QWI) can be caused by focussed ion beam (FIB) implantation to the quantum well (QW) or multi-quantum well (MQW) active area. Subsequent annealing of the FIB damage will leave local periodic adjustments to the energy levels in the active region, providing the necessary DFB/DBR grating. Alternatively, or in addition, this periodic QWI structure or another periodic variation can be separated from the active region but associated therewith. For example, a QW or MQW structure which overlies the active region will carry the evanescent part of the waveform that is propagating in the active region. A periodic QWI structure in this region will thus affect the waveform.

Abstract: A tunable semiconductor laser comprises a propagation region in which a waveform can exist, the propagation region comprising sequential gain and control regions, the gain region comprising a light amplification region supplied by a source of excitation, and the control region comprising a periodic structure through which the waveform propagates. The control region can be linked to a source of current thereby to enable changes to be made to the refractive index thereof. It is preferred that the material of the propagation region is (Ga,In)(N,As). As a result, in the gain region the waveform will be less tightly confined and hence a higher gain can be produced without suffering from saturation of the gain material. Ideally, there will be tight confinement of the waveform in the control region to allow maximum advantage to be made of the change in refractive index.