Patents Assigned to Kanto Kagaku Kabushiki Kaisha
  • Publication number: 20240076547
    Abstract: It is known that when etching gold films using etching solutions containing iodine and iodide, N-methyl-2-pyrrolidinone (NP) is added to improve the etching solution's wettability, microfabrication property, and solution life. However, in recent years, the use of NMP has been regulated due to its adverse effects on human health. The present invention provides an etching solution and etching method for gold film that improves wettability, microfabrication property, and solution life without containing NP. In order to address the problem of the prior art, the present invention provides etching solutions and etching methods for gold films that improve wettability, microfabrication property, and liquid life without NMP, characterized by the inclusion of a specific organic solvent in the etching solution containing iodine and iodide.
    Type: Application
    Filed: January 19, 2022
    Publication date: March 7, 2024
    Applicant: KANTO KAGAKU KABUSHIKI KAISHA
    Inventors: Itsuki KASHIWAGI, Yuki YOSHIDA, Koichi INOUE, Iori KAWASHIMA
  • Patent number: 11905490
    Abstract: An object of the present invention is to provide a cleaning liquid that effectively removes in a short time organic residues and abrasive grains derived from a slurry in a semiconductor substrate in which a Co contact plug and/or Co wiring are present. The present invention relates to a cleaning liquid composition for cleaning a substrate having a Co contact plug and/or Co wiring, which contains one or more reducing agents and water. Furthermore, the present invention relates to a cleaning liquid composition for cleaning a substrate having Co and not having Cu, which contains one or more reducing agents and water and has a pH of 3 or more and less than 12.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: February 20, 2024
    Assignee: Kanto Kagaku Kabushiki Kaisha
    Inventor: Areji Takanaka
  • Patent number: 11732365
    Abstract: The present invention addresses the problem of providing a remover composition which can sufficiently remove ruthenium (Ru) remaining on substrates and can be inhibited from evolving RuO4 gas. The remover composition, which is for removing ruthenium remaining on substrates, has a pH at 25° C. of 8 or higher and includes one or more pH buffer ingredients.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: August 22, 2023
    Assignee: Kanto Kagaku Kabushiki Kaisha
    Inventors: Itsuki Kashiwagi, Takuo Ohwada
  • Patent number: 11692173
    Abstract: The present invention provides, in order to prepare matured hepatocytes analogous in various points to primary hepatocytes, a method for preparing hepatocytes or cells that can be differentiated into hepatocytes from pluripotent stem cells, comprising the steps of: (1) culturing the pluripotent stem cells in a medium containing an activator of an activin receptor-like kinase-4,7; (2) culturing the cells obtained in the step (1) in a medium containing a bone morphogenetic factor and a fibroblast growth factor; (3) culturing the cells obtained in the step (2) in a medium containing an activator of a hepatocyte growth factor receptor and an activator of an oncostatin M receptor; and (4) culturing the cells obtained in the step (3) to obtain hepatocytes or cells that can be differentiated into hepatocytes, wherein in at least one of the steps (2), (3) and (4), cells are cultured on a high-density collagen gel membrane.
    Type: Grant
    Filed: October 9, 2018
    Date of Patent: July 4, 2023
    Assignees: TOKYO INSTITUTE OF TECHNOLOGY, KANTO KAGAKU KABUSHIKI KAISHA, CHUGAI SEIYAKU KABUSHIKI KAISHA
    Inventors: Shoen Kume, Nobuaki Shiraki, Hiroyuki Yamaguchi, Tomoaki Inoue, Toshito Nakagawa, Jumpei Kiyokawa
  • Patent number: 11512397
    Abstract: An etchant composition that is capable of batch etching treatment of a tungsten film and a titanium nitride film and a method for etching using said etchant composition are provided. The etching composition of the present invention is an etchant composition comprising nitric acid and water for batch etching treatment of a tungsten film and a titanium nitride film.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: November 29, 2022
    Assignee: KANTO KAGAKU KABUSHIKI KAISHA
    Inventors: Ryou Kouno, Takuo Ohwada
  • Patent number: 11485812
    Abstract: A problem is presented in that conventional photochromic compounds cannot be considered adequate in terms of the colorizing/decolorizing rate and durability, and the production process therefore has many steps. The present invention provides an industrially applicable photochromic compound that has both a rapid colorizing/decolorizing reaction and high durability and can also be synthesized at a low cost. This compound is characterized in that etheric oxygen atoms are bonded to the carbon atoms at position 1 of a pyranoquinazoline (8H-pyrano[3,2-f]quinazoline) skeleton and position 10 of a naphthopyran (3H-naphtho[2,1-b]pyran) skeleton, said compound having photochromic properties and being a photochromic compound that has both a rapid colorizing/decolorizing reaction and high durability. Also provided is an industrially applicable photochromic compound that can be synthesized at a low cost.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: November 1, 2022
    Assignee: KANTO KAGAKU KABUSHIKI KAISHA
    Inventors: Jiro Abe, Yuki Inagaki, Takayoshi Suga, Hiroto Nagasawa
  • Patent number: 11279904
    Abstract: Provided is a cleaning liquid composition which is useful for cleaning of a substrate or the like that has been subjected to a chemical mechanical polishing (CMP) process, etc in the production steps of an electronic device such as a semiconductor element. A cleaning liquid composition according to the present invention is used for the purpose of cleaning a substrate that has a Cu wiring, and comprises one or more basic compounds and one or more nitrogen-containing monocyclic heterocyclic aromatic compounds that contain one or more carboxyl groups or ester groups, provided that in cases where one or more amino groups are contained therein, only amino groups directly bonded to a nitrogen-containing heterocyclic rind are contained. This cleaning liquid composition has a hydrogen ion concentration (pH) of 8-12.
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: March 22, 2022
    Assignee: KANTO KAGAKU KABUSHIKI KAISHA
    Inventors: Kikue Morita, Areji Takanaka, Takuo Ohwada
  • Patent number: 11198264
    Abstract: A dried vitrigel membrane is produced by a method including the following steps of (1) a step of keeping a hydrogel in the inside of a wall surface mold with a shape the same as the desired shape disposed on a substrate, and discharging a part of free water within the hydrogel from a gap between the substrate and the wall surface mold; (2) a step of removing the wall surface mold from the top of the substrate; (3) a step of drying the hydrogel to remove the residual free water, thereby fabricating a vitrified dried hydrogel; (4) a step of rehydrating the dried hydrogel to fabricate a vitrigel membrane; and (5) a step of redrying the vitrigel membrane to remove free water, thereby fabricating a vitrified dried vitrigel membrane.
    Type: Grant
    Filed: July 9, 2014
    Date of Patent: December 14, 2021
    Assignees: KANTO KAGAKU KABUSHIKI KAISHA
    Inventors: Toshiaki Takezawa, Ayumi Oshikata, Hiroyuki Kuroyama, Tomoya Sawaguchi, Hiroyuki Yamaguchi
  • Publication number: 20210340500
    Abstract: As a method for producing enterocytes derived from pluripotent stem cells and having functions corresponding to those of actual enterocytes, a method for producing enterocytes using an enterocyte differentiation medium containing a GSK3 inhibitor, and at least one selected from the group consisting of an activator of a hepatocyte growth factor receptor, an adrenal cortex hormone, calcitriol, and dimethyl sulfoxide is provided.
    Type: Application
    Filed: September 9, 2019
    Publication date: November 4, 2021
    Applicants: TOKYO INSTITUTE OF TECHNOLOGY, THE UNIVERSITY OF TOKYO, KANTO KAGAKU KABUSHIKI KAISHA
    Inventors: Shoen KUME, Nobuaki SHIRAKI, Kazuya MAEDA, Hiroyuki KUSUHARA, Masaya ISHIKAWA, Teruhiko WATANABE
  • Patent number: 11091726
    Abstract: To provide a composition for removing photoresist residue and/or polymer residue formed in a process for producing a semiconductor circuit element, and a removal method employing same. A composition for removing photoresist residue and/or polymer residue, the composition containing saccharin and water, and the pH being no greater than 9.7.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: August 17, 2021
    Assignee: Kanto Kagaku Kabushiki Kaisha
    Inventor: Yasuyuki Seino
  • Publication number: 20210207085
    Abstract: The present invention provides, in order to prepare matured hepatocytes analogous in various points to primary hepatocytes, a method for preparing hepatocytes or cells that can be differentiated into hepatocytes from pluripotent stem cells, comprising the steps of: (1) culturing the pluripotent stem cells in a medium containing an activator of an activin receptor-like kinase-4,7; (2) culturing the cells obtained in the step (1) in a medium containing a bone morphogenetic factor and a fibroblast growth factor; (3) culturing the cells obtained in the step (2) in a medium containing an activator of a hepatocyte growth factor receptor and an activator of an oncostatin M receptor; and (4) culturing the cells obtained in the step (3) to obtain hepatocytes or cells that can be differentiated into hepatocytes, wherein in at least one of the steps (2), (3) and (4), cells are cultured on a high-density collagen gel membrane.
    Type: Application
    Filed: October 9, 2018
    Publication date: July 8, 2021
    Applicants: TOKYO INSTITUTE OF TECHNOLOGY, KANTO KAGAKU KABUSHIKI KAISHA, CHUGAI SEIYAKU KABUSHIKI KAISHA
    Inventors: Shoen KUME, Nobuaki SHIRAKI, Hiroyuki YAMAGUCHI, Tomoaki INOUE, Toshito NAKAGAWA, Jumpei KIYOKAWA
  • Patent number: 11046910
    Abstract: Provided is a cleaning solution composition which, when cleaning the surface of a semiconductor substrate or glass substrate, does not damage SiO2, Si3N4, Si, and the like forming a layer on the substrate surface, can be used under processing conditions applicable to a brush scrub cleaning chamber equipped with a CMP apparatus, and can efficiently remove compounds derived from abrasive particles in a slurry. This cleaning solution composition for cleaning the surface of a semiconductor substrate or glass substrate contains: one or two or more fluorine atom-containing inorganic acids or salts thereof; water; one or two or more reducing agents; and one or two or more anionic surfactants, and has a hydrogen ion concentration (pH) of less than 7.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: June 29, 2021
    Assignee: KANTO KAGAKU KABUSHIKI KAISHA
    Inventors: Yumiko Taniguchi, Areji Takanaka, Takuo Ohwada
  • Publication number: 20210163856
    Abstract: The purpose of the present invention is to provide a cleaning liquid composition useful in cleaning substrates, etc., which have undergone treatment such as chemical mechanical polishing (CMP) in a process for manufacturing electronic devices such as semiconductor elements. This cleaning liquid composition for cleaning substrates having Cu wiring includes one or more basic compounds and one or more heteromonocyclic aromatic compounds containing a nitrogen atom, and has a hydrogen ion concentration (pH) of 8-11.
    Type: Application
    Filed: November 30, 2020
    Publication date: June 3, 2021
    Applicant: Kanto Kagaku Kabushiki Kaisha
    Inventors: Kikue Morita, Chiyoko Horike, Keisuke Fukaya, Takuo Ohwada
  • Patent number: 10920326
    Abstract: Provided are: an etchant composition for titanium or titanium alloy, the etchant composition being used for selectively etching a titanium layer or titanium-containing layer formed on an oxide semiconductor layer; and an etching method using said etchant composition. The etchant composition according to the present invention, which is used for etching a titanium layer or titanium-containing layer on an oxide semiconductor, comprises: a compound containing ammonium ions; hydrogen peroxide; and a basic compound, wherein the etchant composition has a pH of 7-11.
    Type: Grant
    Filed: March 30, 2018
    Date of Patent: February 16, 2021
    Assignee: KANTO KAGAKU KABUSHIKI KAISHA
    Inventors: Ryou Sasaki, Hideki Takahashi, Taiga Yokoyama
  • Patent number: 10900014
    Abstract: [Problem] To provide a medium suitable for long-term storage, i.e., that ensures sufficient quality retention period, for growing obligate anaerobic bacteria or microaerobic bacteria under aerobic environment, and to provide a method of easily detecting obligate anaerobic bacteria or microaerobic bacteria using said medium. [Means for solving the problem] A long-term storage medium comprising dithiothreitol and/or ascorbic acid as a reducing agent in a basal medium, for culturing obligate anaerobic bacteria or microaerobic bacteria under aerobic environment, and a method of detecting obligate anaerobic bacteria or microaerobic bacteria using said medium.
    Type: Grant
    Filed: December 16, 2016
    Date of Patent: January 26, 2021
    Assignee: Kanto Kagaku Kabushiki Kaisha
    Inventors: Norikuni Uchida, Akihiko Yokoyama
  • Patent number: 10655231
    Abstract: Provided is an etchant composition for a multilayered metal film comprising both a layer comprising copper and a layer comprising molybdenum, the etchant composition: being capable of etching en bloc a multilayered metal film comprising a layer constituted of copper or an alloy including copper as the main component and a layer constituted of molybdenum or an alloy including molybdenum as the main component; being effective in preventing the molybdenum layer from being undercut; making it easy to regulate the component concentrations so as to accommodate the cross-sectional shape control and cross-section; and being stable. Also provided are a method of etching using the etchant composition and a method for prolonging the life of the etchant composition.
    Type: Grant
    Filed: November 17, 2015
    Date of Patent: May 19, 2020
    Assignee: Kanto Kagaku Kabushiki Kaisha
    Inventors: Hideki Takahashi, Pen-Nan Liao, Ying-Hao Li
  • Patent number: 10658569
    Abstract: This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: May 19, 2020
    Assignees: SUMITOMO CHEMICAL COMPANY, LIMITED, KANTO KAGAKU KABUSHIKI KAISHA
    Inventors: Fumimasa Horikiri, Kenji Shibata, Kazutoshi Watanabe, Kazufumi Suenaga, Masaki Noguchi, Kenji Kuroiwa
  • Publication number: 20200131193
    Abstract: [Problem] A problem is presented in that conventional photochromic compounds cannot be considered adequate in terms of the colorizing/decolorizing rate and durability, and the production process therefore has many steps. The present invention provides an industrially applicable photochromic compound that has both a rapid colorizing/decolorizing reaction and high durability and can also be synthesized at a low cost. [Solution] This compound is characterized in that etheric oxygen atoms are bonded to the carbon atoms at position 1 of a pyranoquinazoline (8H-pyrano[3,2-f]quinazoline) skeleton and position 10 of a naphthopyran (3H-naphtho[2,1-b]pyran) skeleton, said compound having photochromic properties and being a photochromic compound that has both a rapid colorizing/decolorizing reaction and high durability. Also provided is an industrially applicable photochromic compound that can be synthesized at a low cost.
    Type: Application
    Filed: January 31, 2018
    Publication date: April 30, 2020
    Applicant: KANTO KAGAKU KABUSHIKI KAISHA
    Inventors: Jiro ABE, Yuki INAGAKI, Takayoshi SUGA, Hiroto NAGASAWA
  • Publication number: 20190115525
    Abstract: This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.
    Type: Application
    Filed: December 12, 2018
    Publication date: April 18, 2019
    Applicants: SUMITOMO CHEMICAL COMPANY, LIMITED, KANTO KAGAKU KABUSHIKI KAISHA
    Inventors: Fumimasa HORIKIRI, Kenji SHIBATA, Kazutoshi WATANABE, Kazufumi SUENAGA, Masaki NOGUCHI, Kenji KUROIWA
  • Patent number: 10199564
    Abstract: This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.
    Type: Grant
    Filed: January 19, 2016
    Date of Patent: February 5, 2019
    Assignees: SUMITOMO CHEMICAL COMPANY, LIMITED, KANTO KAGAKU KABUSHIKI KAISHA
    Inventors: Fumimasa Horikiri, Kenji Shibata, Kazutoshi Watanabe, Kazufumi Suenaga, Masaki Noguchi, Kenji Kuroiwa