Patents Assigned to Kanto Kagaku Kabushiki Kaisha
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Publication number: 20240076547Abstract: It is known that when etching gold films using etching solutions containing iodine and iodide, N-methyl-2-pyrrolidinone (NP) is added to improve the etching solution's wettability, microfabrication property, and solution life. However, in recent years, the use of NMP has been regulated due to its adverse effects on human health. The present invention provides an etching solution and etching method for gold film that improves wettability, microfabrication property, and solution life without containing NP. In order to address the problem of the prior art, the present invention provides etching solutions and etching methods for gold films that improve wettability, microfabrication property, and liquid life without NMP, characterized by the inclusion of a specific organic solvent in the etching solution containing iodine and iodide.Type: ApplicationFiled: January 19, 2022Publication date: March 7, 2024Applicant: KANTO KAGAKU KABUSHIKI KAISHAInventors: Itsuki KASHIWAGI, Yuki YOSHIDA, Koichi INOUE, Iori KAWASHIMA
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Patent number: 11905490Abstract: An object of the present invention is to provide a cleaning liquid that effectively removes in a short time organic residues and abrasive grains derived from a slurry in a semiconductor substrate in which a Co contact plug and/or Co wiring are present. The present invention relates to a cleaning liquid composition for cleaning a substrate having a Co contact plug and/or Co wiring, which contains one or more reducing agents and water. Furthermore, the present invention relates to a cleaning liquid composition for cleaning a substrate having Co and not having Cu, which contains one or more reducing agents and water and has a pH of 3 or more and less than 12.Type: GrantFiled: September 19, 2019Date of Patent: February 20, 2024Assignee: Kanto Kagaku Kabushiki KaishaInventor: Areji Takanaka
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Patent number: 11732365Abstract: The present invention addresses the problem of providing a remover composition which can sufficiently remove ruthenium (Ru) remaining on substrates and can be inhibited from evolving RuO4 gas. The remover composition, which is for removing ruthenium remaining on substrates, has a pH at 25° C. of 8 or higher and includes one or more pH buffer ingredients.Type: GrantFiled: November 13, 2019Date of Patent: August 22, 2023Assignee: Kanto Kagaku Kabushiki KaishaInventors: Itsuki Kashiwagi, Takuo Ohwada
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Patent number: 11692173Abstract: The present invention provides, in order to prepare matured hepatocytes analogous in various points to primary hepatocytes, a method for preparing hepatocytes or cells that can be differentiated into hepatocytes from pluripotent stem cells, comprising the steps of: (1) culturing the pluripotent stem cells in a medium containing an activator of an activin receptor-like kinase-4,7; (2) culturing the cells obtained in the step (1) in a medium containing a bone morphogenetic factor and a fibroblast growth factor; (3) culturing the cells obtained in the step (2) in a medium containing an activator of a hepatocyte growth factor receptor and an activator of an oncostatin M receptor; and (4) culturing the cells obtained in the step (3) to obtain hepatocytes or cells that can be differentiated into hepatocytes, wherein in at least one of the steps (2), (3) and (4), cells are cultured on a high-density collagen gel membrane.Type: GrantFiled: October 9, 2018Date of Patent: July 4, 2023Assignees: TOKYO INSTITUTE OF TECHNOLOGY, KANTO KAGAKU KABUSHIKI KAISHA, CHUGAI SEIYAKU KABUSHIKI KAISHAInventors: Shoen Kume, Nobuaki Shiraki, Hiroyuki Yamaguchi, Tomoaki Inoue, Toshito Nakagawa, Jumpei Kiyokawa
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Patent number: 11512397Abstract: An etchant composition that is capable of batch etching treatment of a tungsten film and a titanium nitride film and a method for etching using said etchant composition are provided. The etching composition of the present invention is an etchant composition comprising nitric acid and water for batch etching treatment of a tungsten film and a titanium nitride film.Type: GrantFiled: December 23, 2020Date of Patent: November 29, 2022Assignee: KANTO KAGAKU KABUSHIKI KAISHAInventors: Ryou Kouno, Takuo Ohwada
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Patent number: 11485812Abstract: A problem is presented in that conventional photochromic compounds cannot be considered adequate in terms of the colorizing/decolorizing rate and durability, and the production process therefore has many steps. The present invention provides an industrially applicable photochromic compound that has both a rapid colorizing/decolorizing reaction and high durability and can also be synthesized at a low cost. This compound is characterized in that etheric oxygen atoms are bonded to the carbon atoms at position 1 of a pyranoquinazoline (8H-pyrano[3,2-f]quinazoline) skeleton and position 10 of a naphthopyran (3H-naphtho[2,1-b]pyran) skeleton, said compound having photochromic properties and being a photochromic compound that has both a rapid colorizing/decolorizing reaction and high durability. Also provided is an industrially applicable photochromic compound that can be synthesized at a low cost.Type: GrantFiled: January 31, 2018Date of Patent: November 1, 2022Assignee: KANTO KAGAKU KABUSHIKI KAISHAInventors: Jiro Abe, Yuki Inagaki, Takayoshi Suga, Hiroto Nagasawa
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Patent number: 11279904Abstract: Provided is a cleaning liquid composition which is useful for cleaning of a substrate or the like that has been subjected to a chemical mechanical polishing (CMP) process, etc in the production steps of an electronic device such as a semiconductor element. A cleaning liquid composition according to the present invention is used for the purpose of cleaning a substrate that has a Cu wiring, and comprises one or more basic compounds and one or more nitrogen-containing monocyclic heterocyclic aromatic compounds that contain one or more carboxyl groups or ester groups, provided that in cases where one or more amino groups are contained therein, only amino groups directly bonded to a nitrogen-containing heterocyclic rind are contained. This cleaning liquid composition has a hydrogen ion concentration (pH) of 8-12.Type: GrantFiled: December 26, 2017Date of Patent: March 22, 2022Assignee: KANTO KAGAKU KABUSHIKI KAISHAInventors: Kikue Morita, Areji Takanaka, Takuo Ohwada
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Patent number: 11198264Abstract: A dried vitrigel membrane is produced by a method including the following steps of (1) a step of keeping a hydrogel in the inside of a wall surface mold with a shape the same as the desired shape disposed on a substrate, and discharging a part of free water within the hydrogel from a gap between the substrate and the wall surface mold; (2) a step of removing the wall surface mold from the top of the substrate; (3) a step of drying the hydrogel to remove the residual free water, thereby fabricating a vitrified dried hydrogel; (4) a step of rehydrating the dried hydrogel to fabricate a vitrigel membrane; and (5) a step of redrying the vitrigel membrane to remove free water, thereby fabricating a vitrified dried vitrigel membrane.Type: GrantFiled: July 9, 2014Date of Patent: December 14, 2021Assignees: KANTO KAGAKU KABUSHIKI KAISHAInventors: Toshiaki Takezawa, Ayumi Oshikata, Hiroyuki Kuroyama, Tomoya Sawaguchi, Hiroyuki Yamaguchi
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Publication number: 20210340500Abstract: As a method for producing enterocytes derived from pluripotent stem cells and having functions corresponding to those of actual enterocytes, a method for producing enterocytes using an enterocyte differentiation medium containing a GSK3 inhibitor, and at least one selected from the group consisting of an activator of a hepatocyte growth factor receptor, an adrenal cortex hormone, calcitriol, and dimethyl sulfoxide is provided.Type: ApplicationFiled: September 9, 2019Publication date: November 4, 2021Applicants: TOKYO INSTITUTE OF TECHNOLOGY, THE UNIVERSITY OF TOKYO, KANTO KAGAKU KABUSHIKI KAISHAInventors: Shoen KUME, Nobuaki SHIRAKI, Kazuya MAEDA, Hiroyuki KUSUHARA, Masaya ISHIKAWA, Teruhiko WATANABE
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Patent number: 11091726Abstract: To provide a composition for removing photoresist residue and/or polymer residue formed in a process for producing a semiconductor circuit element, and a removal method employing same. A composition for removing photoresist residue and/or polymer residue, the composition containing saccharin and water, and the pH being no greater than 9.7.Type: GrantFiled: October 30, 2015Date of Patent: August 17, 2021Assignee: Kanto Kagaku Kabushiki KaishaInventor: Yasuyuki Seino
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Publication number: 20210207085Abstract: The present invention provides, in order to prepare matured hepatocytes analogous in various points to primary hepatocytes, a method for preparing hepatocytes or cells that can be differentiated into hepatocytes from pluripotent stem cells, comprising the steps of: (1) culturing the pluripotent stem cells in a medium containing an activator of an activin receptor-like kinase-4,7; (2) culturing the cells obtained in the step (1) in a medium containing a bone morphogenetic factor and a fibroblast growth factor; (3) culturing the cells obtained in the step (2) in a medium containing an activator of a hepatocyte growth factor receptor and an activator of an oncostatin M receptor; and (4) culturing the cells obtained in the step (3) to obtain hepatocytes or cells that can be differentiated into hepatocytes, wherein in at least one of the steps (2), (3) and (4), cells are cultured on a high-density collagen gel membrane.Type: ApplicationFiled: October 9, 2018Publication date: July 8, 2021Applicants: TOKYO INSTITUTE OF TECHNOLOGY, KANTO KAGAKU KABUSHIKI KAISHA, CHUGAI SEIYAKU KABUSHIKI KAISHAInventors: Shoen KUME, Nobuaki SHIRAKI, Hiroyuki YAMAGUCHI, Tomoaki INOUE, Toshito NAKAGAWA, Jumpei KIYOKAWA
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Patent number: 11046910Abstract: Provided is a cleaning solution composition which, when cleaning the surface of a semiconductor substrate or glass substrate, does not damage SiO2, Si3N4, Si, and the like forming a layer on the substrate surface, can be used under processing conditions applicable to a brush scrub cleaning chamber equipped with a CMP apparatus, and can efficiently remove compounds derived from abrasive particles in a slurry. This cleaning solution composition for cleaning the surface of a semiconductor substrate or glass substrate contains: one or two or more fluorine atom-containing inorganic acids or salts thereof; water; one or two or more reducing agents; and one or two or more anionic surfactants, and has a hydrogen ion concentration (pH) of less than 7.Type: GrantFiled: March 5, 2018Date of Patent: June 29, 2021Assignee: KANTO KAGAKU KABUSHIKI KAISHAInventors: Yumiko Taniguchi, Areji Takanaka, Takuo Ohwada
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Publication number: 20210163856Abstract: The purpose of the present invention is to provide a cleaning liquid composition useful in cleaning substrates, etc., which have undergone treatment such as chemical mechanical polishing (CMP) in a process for manufacturing electronic devices such as semiconductor elements. This cleaning liquid composition for cleaning substrates having Cu wiring includes one or more basic compounds and one or more heteromonocyclic aromatic compounds containing a nitrogen atom, and has a hydrogen ion concentration (pH) of 8-11.Type: ApplicationFiled: November 30, 2020Publication date: June 3, 2021Applicant: Kanto Kagaku Kabushiki KaishaInventors: Kikue Morita, Chiyoko Horike, Keisuke Fukaya, Takuo Ohwada
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Patent number: 10920326Abstract: Provided are: an etchant composition for titanium or titanium alloy, the etchant composition being used for selectively etching a titanium layer or titanium-containing layer formed on an oxide semiconductor layer; and an etching method using said etchant composition. The etchant composition according to the present invention, which is used for etching a titanium layer or titanium-containing layer on an oxide semiconductor, comprises: a compound containing ammonium ions; hydrogen peroxide; and a basic compound, wherein the etchant composition has a pH of 7-11.Type: GrantFiled: March 30, 2018Date of Patent: February 16, 2021Assignee: KANTO KAGAKU KABUSHIKI KAISHAInventors: Ryou Sasaki, Hideki Takahashi, Taiga Yokoyama
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Patent number: 10900014Abstract: [Problem] To provide a medium suitable for long-term storage, i.e., that ensures sufficient quality retention period, for growing obligate anaerobic bacteria or microaerobic bacteria under aerobic environment, and to provide a method of easily detecting obligate anaerobic bacteria or microaerobic bacteria using said medium. [Means for solving the problem] A long-term storage medium comprising dithiothreitol and/or ascorbic acid as a reducing agent in a basal medium, for culturing obligate anaerobic bacteria or microaerobic bacteria under aerobic environment, and a method of detecting obligate anaerobic bacteria or microaerobic bacteria using said medium.Type: GrantFiled: December 16, 2016Date of Patent: January 26, 2021Assignee: Kanto Kagaku Kabushiki KaishaInventors: Norikuni Uchida, Akihiko Yokoyama
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Patent number: 10655231Abstract: Provided is an etchant composition for a multilayered metal film comprising both a layer comprising copper and a layer comprising molybdenum, the etchant composition: being capable of etching en bloc a multilayered metal film comprising a layer constituted of copper or an alloy including copper as the main component and a layer constituted of molybdenum or an alloy including molybdenum as the main component; being effective in preventing the molybdenum layer from being undercut; making it easy to regulate the component concentrations so as to accommodate the cross-sectional shape control and cross-section; and being stable. Also provided are a method of etching using the etchant composition and a method for prolonging the life of the etchant composition.Type: GrantFiled: November 17, 2015Date of Patent: May 19, 2020Assignee: Kanto Kagaku Kabushiki KaishaInventors: Hideki Takahashi, Pen-Nan Liao, Ying-Hao Li
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Patent number: 10658569Abstract: This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.Type: GrantFiled: December 12, 2018Date of Patent: May 19, 2020Assignees: SUMITOMO CHEMICAL COMPANY, LIMITED, KANTO KAGAKU KABUSHIKI KAISHAInventors: Fumimasa Horikiri, Kenji Shibata, Kazutoshi Watanabe, Kazufumi Suenaga, Masaki Noguchi, Kenji Kuroiwa
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Publication number: 20200131193Abstract: [Problem] A problem is presented in that conventional photochromic compounds cannot be considered adequate in terms of the colorizing/decolorizing rate and durability, and the production process therefore has many steps. The present invention provides an industrially applicable photochromic compound that has both a rapid colorizing/decolorizing reaction and high durability and can also be synthesized at a low cost. [Solution] This compound is characterized in that etheric oxygen atoms are bonded to the carbon atoms at position 1 of a pyranoquinazoline (8H-pyrano[3,2-f]quinazoline) skeleton and position 10 of a naphthopyran (3H-naphtho[2,1-b]pyran) skeleton, said compound having photochromic properties and being a photochromic compound that has both a rapid colorizing/decolorizing reaction and high durability. Also provided is an industrially applicable photochromic compound that can be synthesized at a low cost.Type: ApplicationFiled: January 31, 2018Publication date: April 30, 2020Applicant: KANTO KAGAKU KABUSHIKI KAISHAInventors: Jiro ABE, Yuki INAGAKI, Takayoshi SUGA, Hiroto NAGASAWA
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Publication number: 20190115525Abstract: This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.Type: ApplicationFiled: December 12, 2018Publication date: April 18, 2019Applicants: SUMITOMO CHEMICAL COMPANY, LIMITED, KANTO KAGAKU KABUSHIKI KAISHAInventors: Fumimasa HORIKIRI, Kenji SHIBATA, Kazutoshi WATANABE, Kazufumi SUENAGA, Masaki NOGUCHI, Kenji KUROIWA
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Patent number: 10199564Abstract: This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.Type: GrantFiled: January 19, 2016Date of Patent: February 5, 2019Assignees: SUMITOMO CHEMICAL COMPANY, LIMITED, KANTO KAGAKU KABUSHIKI KAISHAInventors: Fumimasa Horikiri, Kenji Shibata, Kazutoshi Watanabe, Kazufumi Suenaga, Masaki Noguchi, Kenji Kuroiwa