Abstract: Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.
Type:
Application
Filed:
June 6, 2008
Publication date:
October 2, 2008
Applicants:
Sanyo Electric Co., Ltd., Kanto Semiconductors Co., Ltd.