Abstract: In a static induction transistor of thermionic emission type, its gate region is formed of a semiconductor having a forbidden band gap larger than that of a semiconductor forming its channel region, and the distance between a source region and the intrinsic gate region is selected to be smaller than the mean free path of carriers so as to permit the thermionic emission. Such a vertical structure transistor is also applied to an integrated circuit.
Type:
Grant
Filed:
January 24, 1990
Date of Patent:
May 26, 1992
Assignees:
Research Development Corp., Junichi Nishizawa, Kaoru Motoya
Abstract: In a static induction transistor of tunnel injection type, a tunnel injection region is formed between its source region and channel region, and its gate region is formed of a semiconductor having a forbidden band larger than that of said channel region and contacting partially or wholly with the surface of said channel region. Such a transistor is also applied to an integrated circuit.
Type:
Grant
Filed:
January 25, 1988
Date of Patent:
September 26, 1989
Assignees:
Research Development Corp., Junichi Nishizawa, Kaoru Motoya
Abstract: A junction field effect transistor has a wide bandgap heterojunction gate. The source to gate spacing is less than the carrier mean free path for ballistic transport. The channel thickness is less than twice the Debye length.
Type:
Grant
Filed:
July 25, 1985
Date of Patent:
December 8, 1987
Assignees:
Research Development Corp., Junichi Nishizawa, Kaoru Motoya
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