Abstract: A system for controlling process temperatures for semi-conductor wafers comprises a heater to heat the wafer, an element to generate a plurality of ultrasonic vibrations in the wafer, a Sagnac interferometer adapted to sense the ultrasonic vibrations and generate a wafer temperature signal responsive thereto, a system to calculate the wafer temperature on the basis of the generated wafer temperature signal, and a control element the wafer heater on the basis of the calculated wafer temperature.