Patents Assigned to Katholieke Universiteit, K.U. LEUVEN R&D
  • TUNNEL FIELD EFFECT TRANSISTOR DEVICE AND METHOD FOR MAKING THE DEVICE
    Publication number: 20130334500
    Abstract: A Tunnel Field Effect Transistor device (TFET) made of at least following layers: a highly doped drain layer, a highly doped source layer, a channel layer, a gate dielectric layer and a gate electrode layer, the gate dielectric layer extending along the source layer, and a highly doped pocket layer extending in between and along the gate dielectric layer and the source layer, characterized in that the pocket layer extends to between and along the source layer and the channel layer.
    Type: Application
    Filed: May 29, 2013
    Publication date: December 19, 2013
    Applicants: Katholieke Universiteit, K.U. LEUVEN R&D, IMEC
    Inventors: Quentin Smets, Anne S. Verhulst, Rita Rooyackers, Marc Heyns