Patents Assigned to Katholieke Universitiet Leuven
  • Patent number: 8835986
    Abstract: A III-nitride device is provided comprising a semiconductor substrate; a stack of active layers on the substrate, each layer comprising a III-nitride material; a gate, a source and a drain contact on the stack, wherein a gate, a source and a drain region of the substrate are projections of respectively the gate, the source and the drain contact in the substrate; and a trench in the substrate extending from a backside of the substrate (side opposite to the one in contact with the stack of active layers) to an underlayer of the stack of active layers in contact with the substrate, the trench completely surrounding the drain region, being positioned in between an edge of the gate region towards the drain and an edge of the drain region towards the gate and having a width such that the drain region of the substrate is substantially made of the semiconductor material.
    Type: Grant
    Filed: June 19, 2012
    Date of Patent: September 16, 2014
    Assignees: IMEC, Katholieke Universitiet Leuven, K.U. LEUVEN R&D
    Inventors: Puneet Srivastava, Marleen Van Hove, Pawel Malinowski
  • Publication number: 20120326215
    Abstract: A III-nitride device is provided comprising a semiconductor substrate; a stack of active layers on the substrate, each layer comprising a III-nitride material; a gate, a source and a drain contact on the stack, wherein a gate, a source and a drain region of the substrate are projections of respectively the gate, the source and the drain contact in the substrate; and a trench in the substrate extending from a backside of the substrate (side opposite to the one in contact with the stack of active layers) to an underlayer of the stack of active layers in contact with the substrate, the trench completely surrounding the drain region, being positioned in between an edge of the gate region towards the drain and an edge of the drain region towards the gate and having a width such that the drain region of the substrate is substantially made of the semiconductor material.
    Type: Application
    Filed: June 19, 2012
    Publication date: December 27, 2012
    Applicants: Katholieke Universitiet Leuven, K.U. LEUVEN R&D, IMEC
    Inventors: Puneet Srivastava, Marleen Van Hove, Pawel Malinowski
  • Publication number: 20120009672
    Abstract: The invention is directed to methods for culturing cells so that the cells are induced to differentiate into cells that express a hepatic stellate phenotype and cells that express a hepatic sinusoidal endothelial phenotype. The invention is also directed to cells produced by the methods of the invention. The cells are useful, among other things, for treatment of liver deficiency, liver metabolism studies, and liver toxicity studies.
    Type: Application
    Filed: June 16, 2011
    Publication date: January 12, 2012
    Applicant: Katholieke Universitiet Leuven
    Inventors: Pau Sancho-Bru, Catherine M. Vefaillie