Abstract: Provided are a novel negative chemically-amplified photoresist and an imaging method thereof. The negative chemically-amplified photoresist comprises phenol resin, a photo-acid generator, a cross-linking agent, an alkaline additive, a sensitizing agent and a photoresist solvent, wherein the phenol resin is a host material of the novel negative chemically-amplified photoresist; the photo-acid generator is capable of generating an acid with a certain strength under illumination; and the cross-linking agent can undergo a condensation reaction with a phenolic hydroxyl group or an ortho-/para-hydroxymethyl functional group. The imaging method of the novel negative chemically-amplified photoresist comprises coating, baking, exposure, baking, developing and other steps. The chemically-amplified negative photoresist of the present invention can improve the resolution and photospeed of photoresists effectively.
Type:
Grant
Filed:
August 21, 2013
Date of Patent:
September 19, 2017
Assignee:
KEMPUR MICROELECTRONICS, INC.
Inventors:
Jia Sun, Xin Chen, Roger Sinta, Bing Li, Cuimei Diao, Haibo Li, Xiantao Han