Abstract: An isolation zone for light transmission is formed in a compound semiconductor optical integrated circuit by selective oxidation of a compound semiconductor surface by oxygen plasma.
Type:
Grant
Filed:
August 25, 1975
Date of Patent:
April 5, 1977
Assignee:
Kentaro Hayashi, President, University of Tokyo
Abstract: Method for providing dielectric isolation of an epitaxial layer of a compound semiconductor or for providing separation and protection of pn-junction of a compound semiconductor by applying plasma oxidation.
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