Abstract: The invention related gas recovering system contains at least one gas supply system, a gas treatment system, and a gas separation system. The gas supply system includes a gas supply unit and a supply source. The gas treatment system includes a gas reactor and a gas reduction device. Also, the gas separation system includes a first exhaust unit, a purifying unit, a second exhaust unit and a heating evaporation unit. The gas recovering system can avoid the unnecessary waste of gas to form hazardous waste. Therefore, gas can make more effective use to reduce cost.

Abstract: The heat treating furnace for the gas reaction includes an outer body, an inner body, a heating mechanism, gas supplying mechanism, and a controller. Using the controller to control the amount of gas supply effectively keeps the first pressure (P1) in the gas circulation chamber outside the inner body greater than the second pressure (P2) in the reaction chamber inside the inner body all the time. In this way, the flow rate of gas inlet, reaction rate, cooling rate can be facilitated, and the uniformity of the thin film and the operational safety can be improved.

Abstract: A substrate surface treatment equipment includes a chamber, a ultraviolet ray lamp, an infrared heating element, a blackbody radiation plate and a vacuum extractor. The equipment can do the substrate surface treatment. The substrate surface treatment equipment can wash or modify the substrate surface. Therefore, after the washing and modifying of the substrate surface, the substrate surface can include a better adhesion when processing a thin film deposition or a colloid suspension coating.