Abstract: A method for forming a semiconductor photodetector array having a matrix of pixels, each constituted by a single SIT (Static Induction Transistor). A field oxide layer is formed on a first main surface of a silicon wafer. Portions of a field oxide layer are then removed from predetermined regions of the first main surface. In these predetermined regions are formed a control gate region and a shielding gate region, with the shielding gate region surrounding the control gate region. Oxide layers are formed on the control gate region and shielding gate region. Portions of the field oxide layer between the control gate region and shielding region are removed to partially expose the first main surface of the silicon wafer, and a first main electrode region is formed in the exposed portion. A first conductive electrode is then deposited on the first main region, whereupon the entirety of the first main surface of the silicon wafer is covered with a first insulating layer.