Patents Assigned to Kinsekisha Laboratory, Ltd.
  • Patent number: 4218631
    Abstract: The vibrating element comprises a pair of exciting electrodes having opposing effective portions formed on the opposing major surfaces of a piezoelectric plate, and vibration adjusting members disposed on at least one of the exciting electrodes. The vibration adjusting members are made of the same material as the exciting electrodes and do not project beyond the contour of the effective portions in the direction of propagation of the vibration energy of the vibration but project in a direction perpendicular to the direction of propagation.
    Type: Grant
    Filed: May 30, 1978
    Date of Patent: August 19, 1980
    Assignee: Kinsekisha Laboratory, Ltd.
    Inventor: Kazumasa Yamaguchi
  • Patent number: 4193046
    Abstract: A field effect transistor is used in the bias circuit of an oscillation transistor of a piezo-electric oscillator, and a diode is connected between the gate electrode of the field effect transistor and the base electrode of the oscillation transistor with a polarity to pass current from the gate electrode to the base electrode. The source electrode of the field effect transistor is connected to the base electrode of the oscillation transistor and the drain electrode of the field effect transistor is connected to a power source.
    Type: Grant
    Filed: November 6, 1978
    Date of Patent: March 11, 1980
    Assignee: Kinsekisha Laboratory, Ltd.
    Inventor: Tadataka Chiba
  • Patent number: 3979614
    Abstract: In a crystal element of the type wherein a DT-cut crystal element is used to generate vibrations of the contour mode, one side of the crystal element is flat and the thickness of the element is gradually decreased from the center toward the periphery thereof.
    Type: Grant
    Filed: October 21, 1974
    Date of Patent: September 7, 1976
    Assignee: Kinsekisha Laboratory, Ltd.
    Inventor: Satoshi Toyoda