Patents Assigned to Kisco
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Publication number: 20210386554Abstract: Provided is a structurally stable interbody cage.Type: ApplicationFiled: October 28, 2019Publication date: December 16, 2021Applicant: KISCO CO., LTD.Inventor: Mamoru KONO
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Publication number: 20210077164Abstract: The present disclosure provides a treatment tool cable of satisfactorily treating long tubular bone fractures, such as femoral trochanteric fractures and subtrochanteric fractures. The treatment tool comprises an elastic plate 2 that has a curved shape or that can be curved, the plate comprising at least one pressing portion 20 that is provided at one end in the width direction of the plate and that presses the trochanter 103 of the femur 100 from the posterior side by a restoring force that is generated by deformation of widening the curvature.Type: ApplicationFiled: November 16, 2020Publication date: March 18, 2021Applicant: KiSCO CO., LTDInventor: Jyunichi FUKUMOTO
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Patent number: 9492842Abstract: Provided is: a cell culture membrane, which is free from materials derived from living organisms, can easily be industrially mass-produced, exhibits superior long-term storage properties and chemical resistance, has excellent cell adhesion properties and long-term culture properties and is capable of replicating a cell adhesion morphology that is similar to that of collagen derived from living organisms and being used for conventional cell cultivation. Also provided are a cell culture substrate, and a method for manufacturing the cell culture substrate. In the present invention, as a cell adhesion layer, a polymer membrane represented by formula (I) is formed on the base of a cell culture substrate so as to have a membrane thickness equal to or greater than 0.2 ?m (in the formula, R1 and R2 represent a —(CH2)n—NH2 moiety (n is an integer of 1-10 inclusive.) or H, with at least one of R1 and R2 being a —(CH2)n—NH2 moiety. Moreover, l and m are positive integers expressing polymerization degree).Type: GrantFiled: June 22, 2012Date of Patent: November 15, 2016Assignees: KISCO LTD., DAISANKASEI CO., LTD., The University of TokyoInventors: Yasuo Yoshimoto, Kentaro Kamimae, Yuki Tanabe, Taku Oguni, Takashi Inoue, Tsutomu Mochizuki, Makoto Hirama, Teruo Fujii, Hiroshi Kimura, Hideto Tozawa
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Patent number: 8802969Abstract: Disclosed is a method for manufacturing a photovoltaic device.Type: GrantFiled: August 6, 2010Date of Patent: August 12, 2014Assignee: KISCOInventors: Koeng Su Lim, Jin-Wan Jeon
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Publication number: 20140212974Abstract: Provided is: a cell culture membrane, which is free from materials derived from living organisms, can easily be industrially mass-produced, exhibits superior long-term storage properties and chemical resistance, has excellent cell adhesion properties and long-term culture properties and is capable of replicating a cell adhesion morphology that is similar to that of collagen derived from living organisms and being used for conventional cell cultivation. Also provided are a cell culture substrate, and a method for manufacturing the cell culture substrate. In the present invention, as a cell adhesion layer, a polymer membrane represented by formula (I) is formed on the base of a cell culture substrate so as to have a membrane thickness equal to or greater than 0.2 ?m (in the formula, R1 and R2 represent a —(CH2)n—NH2 moiety (n is an integer of 1-10 inclusive.) or H, with at least one of R1 and R2 being a —(CH2)n—NH2 moiety. Moreover, l and m are positive integers expressing polymerization degree).Type: ApplicationFiled: June 22, 2012Publication date: July 31, 2014Applicants: KISCO LTD., THE UNIVERSITY OF TOKYO, DAISANKASEI CO., LTD.Inventors: Yasuo Yoshimoto, Kentaro Kamimae, Yuki Tanabe, Taku Oguni, Takashi Inoue, Tsutomu Mochizuki, Makoto Hirama, Teruo Fujii, Hiroshi Kimura, Hideto Tozawa
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Patent number: 8642115Abstract: A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and a second electrode disposed on the photoelectric transformation layer; and wherein the light absorbing layer included in at least the one photoelectric transformation layer includes a first sub-layer and a second sub-layer, each of which includes hydrogenated amorphous silicon based material and a crystalline silicon grain respectively.Type: GrantFiled: April 19, 2010Date of Patent: February 4, 2014Assignee: KiscoInventor: Seung-Yeop Myong
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Photovoltaic device including flexible or inflexibel substrate and method for manufacturing the same
Patent number: 8502065Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes: a first electrode and a second electrode; a first unit cell and a second unit cell which are placed between the first electrode and the second electrode and include a first conductive semiconductor layer, an intrinsic semiconductor layer and a second conductive semiconductor layer; and an intermediate reflector which is placed between the first unit cell and the second unit cell, and includes a hydrogenated amorphous carbon layer.Type: GrantFiled: January 9, 2011Date of Patent: August 6, 2013Assignee: KISCOInventor: Seung-Yeop Myong -
Patent number: 8426240Abstract: Disclosed is a method for manufacturing a photovoltaic device including: a forming the first sub-layer including impurity by allowing first flow rate values of the source gas introduced into one group of a first group consisting of odd numbered process chambers and a second group consisting of even numbered process chambers to be maintained constant in each of the process chambers of the one group; and a forming the second sub-layer including impurity by allowing second flow rate values of the source gas introduced into the other group of the first group and the second group to be maintained constant in each of the process chambers of the other group, wherein the second flow rate values are less than the first flow rate values.Type: GrantFiled: April 5, 2011Date of Patent: April 23, 2013Assignee: KiscoInventor: Seung-Yeop Myong
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Patent number: 8383409Abstract: The invention is directed to methods for the propagation or cultivation of cells including preparing a cell culture substrate, wherein the cell culture substrate includes a substrate and a layer formed by surface modification. The layer includes a polymer containing an amino group. The polymer is produced by reacting a polymer represented by formula (II): with a polymer having at least one amino group, —NH2, capable of forming a Schiff base in a monomer of formula (II), thereby forming a polymer layer constituting the layer formed by surface modification. “n” in Formula (II) is 0 or a positive integer, and m is a positive integer. n and m represent the degree of polymerization. Formula (II) is formed by chemical vapor deposition of formyl[2.2]paracyclophane. The methods further include providing cells in a medium; inoculating the cells onto the cell culture substrate; and culturing the cells, wherein the cells adhere to the cell culture substrate.Type: GrantFiled: February 3, 2011Date of Patent: February 26, 2013Assignees: Kisco Ltd., Daisan Kasei Co., Ltd., The University of TokyoInventors: Shin Ohya, Takashi Inoue, Takatoki Yamamoto, Teruo Fujii, Yasuyuki Sakai, Masaki Nishikawa, Hitomi Sakai, Hirosuke Naruto
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Patent number: 8176653Abstract: A method for removing moisture from a substrate coated with a transparent electrode comprises the steps of placing the substrate coated with the transparent electrode in an infrared oven, applying heat to the substrate in the infrared oven, drawing the substrate from the infrared oven, loading the substrate in a chamber and reducing pressure in the chamber and performing a heat treatment on the substrate.Type: GrantFiled: March 3, 2009Date of Patent: May 15, 2012Assignee: KiscoInventor: Seung-Yeop Myong
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Patent number: 8034656Abstract: An annealing method of a zinc oxide thin film, comprises loading a substrate coated with a zinc oxide thin film into a chamber, allowing a hydrogen gas to be flowed into the chamber, fixing pressure in the chamber and annealing the zinc oxide thin film using the hydrogen gas in the chamber.Type: GrantFiled: March 3, 2009Date of Patent: October 11, 2011Assignee: KiscoInventor: Seung-Yeop Myong
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Patent number: 7939444Abstract: A manufacturing method of a thin film solar cell comprises performing dry cleaning of an insulation substrate on which a transparent electrode is formed, patterning the transparent electrodes to be spaced apart from each other, performing dry cleaning of the patterned transparent electrodes, forming a semiconductor layer on surfaces of the transparent electrodes and patterning a metal electrode on the semiconductor layer.Type: GrantFiled: May 26, 2009Date of Patent: May 10, 2011Assignee: KiscoInventors: Seung-Yeop Myong, Boung-Kwon Lim
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Publication number: 20100034970Abstract: A chemical vapor deposition apparatus includes a charging section 10 for charging a feedstock material for vapor deposition, a decomposition oven 2 for decomposing a feedstock material for vapor deposition, an opening/closing valve 4 for interconnecting the charging section 10 and the decomposition oven 2, and a polymerization section 3 for polymerizing the feedstock material decomposed by the decomposition oven for depositing a coating film on the surface of a substrate. The feedstock material for vapor deposition charged into the charging section 10 is vaporized, and the so vaporized feedstock material is delivered to the decomposition oven 2 by opening the opening/closing valve 4 to deposit the coating film.Type: ApplicationFiled: July 28, 2006Publication date: February 11, 2010Applicants: DAISANKASEI CO., LTD., KISCO LTD.Inventors: Tsutomu Mochizuki, Takashi Inoue, Kazuyoshi Uetake
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Patent number: 4183124Abstract: Method of and apparatus for fabricating spiral wrapped cartridge cases or the like, in which an expandable bladder positioned within the interior of the cartridge case is initially expanded by application of hydraulic fluid at relatively low hydraulic pressure levels and at relatively high flow rates until the bladder substantially fills the cartridge case and then is pressurized at relatively high hydraulic pressure levels to form the cartridge case within a die cavity. Hydraulic pressure is applied to the bladder by a hydraulic pressure generator which is powered solely by the closure of the platens of a conventional industrial press between which the die and the pressure generator are mounted. The pressure generator shifts automatically from its low pressure to its high pressure mode of operation as the press platens close.Type: GrantFiled: November 21, 1977Date of Patent: January 15, 1980Assignee: Kisco CompanyInventor: Robert F. Hoffman