Abstract: Disclosed is a method for manufacturing a photovoltaic device.

Abstract: A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and a second electrode disposed on the photoelectric transformation layer; and wherein the light absorbing layer included in at least the one photoelectric transformation layer includes a first sub-layer and a second sub-layer, each of which includes hydrogenated amorphous silicon based material and a crystalline silicon grain respectively.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes: a first electrode and a second electrode; a first unit cell and a second unit cell which are placed between the first electrode and the second electrode and include a first conductive semiconductor layer, an intrinsic semiconductor layer and a second conductive semiconductor layer; and an intermediate reflector which is placed between the first unit cell and the second unit cell, and includes a hydrogenated amorphous carbon layer.

Abstract: Disclosed is a method for manufacturing a photovoltaic device including: a forming the first sub-layer including impurity by allowing first flow rate values of the source gas introduced into one group of a first group consisting of odd numbered process chambers and a second group consisting of even numbered process chambers to be maintained constant in each of the process chambers of the one group; and a forming the second sub-layer including impurity by allowing second flow rate values of the source gas introduced into the other group of the first group and the second group to be maintained constant in each of the process chambers of the other group, wherein the second flow rate values are less than the first flow rate values.

Abstract: A method for removing moisture from a substrate coated with a transparent electrode comprises the steps of placing the substrate coated with the transparent electrode in an infrared oven, applying heat to the substrate in the infrared oven, drawing the substrate from the infrared oven, loading the substrate in a chamber and reducing pressure in the chamber and performing a heat treatment on the substrate.

Abstract: An annealing method of a zinc oxide thin film, comprises loading a substrate coated with a zinc oxide thin film into a chamber, allowing a hydrogen gas to be flowed into the chamber, fixing pressure in the chamber and annealing the zinc oxide thin film using the hydrogen gas in the chamber.

Abstract: A manufacturing method of a thin film solar cell comprises performing dry cleaning of an insulation substrate on which a transparent electrode is formed, patterning the transparent electrodes to be spaced apart from each other, performing dry cleaning of the patterned transparent electrodes, forming a semiconductor layer on surfaces of the transparent electrodes and patterning a metal electrode on the semiconductor layer.