Patents Assigned to Kisco Ltd.
  • Patent number: 9492842
    Abstract: Provided is: a cell culture membrane, which is free from materials derived from living organisms, can easily be industrially mass-produced, exhibits superior long-term storage properties and chemical resistance, has excellent cell adhesion properties and long-term culture properties and is capable of replicating a cell adhesion morphology that is similar to that of collagen derived from living organisms and being used for conventional cell cultivation. Also provided are a cell culture substrate, and a method for manufacturing the cell culture substrate. In the present invention, as a cell adhesion layer, a polymer membrane represented by formula (I) is formed on the base of a cell culture substrate so as to have a membrane thickness equal to or greater than 0.2 ?m (in the formula, R1 and R2 represent a —(CH2)n—NH2 moiety (n is an integer of 1-10 inclusive.) or H, with at least one of R1 and R2 being a —(CH2)n—NH2 moiety. Moreover, l and m are positive integers expressing polymerization degree).
    Type: Grant
    Filed: June 22, 2012
    Date of Patent: November 15, 2016
    Assignees: KISCO LTD., DAISANKASEI CO., LTD., The University of Tokyo
    Inventors: Yasuo Yoshimoto, Kentaro Kamimae, Yuki Tanabe, Taku Oguni, Takashi Inoue, Tsutomu Mochizuki, Makoto Hirama, Teruo Fujii, Hiroshi Kimura, Hideto Tozawa
  • Publication number: 20140212974
    Abstract: Provided is: a cell culture membrane, which is free from materials derived from living organisms, can easily be industrially mass-produced, exhibits superior long-term storage properties and chemical resistance, has excellent cell adhesion properties and long-term culture properties and is capable of replicating a cell adhesion morphology that is similar to that of collagen derived from living organisms and being used for conventional cell cultivation. Also provided are a cell culture substrate, and a method for manufacturing the cell culture substrate. In the present invention, as a cell adhesion layer, a polymer membrane represented by formula (I) is formed on the base of a cell culture substrate so as to have a membrane thickness equal to or greater than 0.2 ?m (in the formula, R1 and R2 represent a —(CH2)n—NH2 moiety (n is an integer of 1-10 inclusive.) or H, with at least one of R1 and R2 being a —(CH2)n—NH2 moiety. Moreover, l and m are positive integers expressing polymerization degree).
    Type: Application
    Filed: June 22, 2012
    Publication date: July 31, 2014
    Applicants: KISCO LTD., THE UNIVERSITY OF TOKYO, DAISANKASEI CO., LTD.
    Inventors: Yasuo Yoshimoto, Kentaro Kamimae, Yuki Tanabe, Taku Oguni, Takashi Inoue, Tsutomu Mochizuki, Makoto Hirama, Teruo Fujii, Hiroshi Kimura, Hideto Tozawa
  • Patent number: 8383409
    Abstract: The invention is directed to methods for the propagation or cultivation of cells including preparing a cell culture substrate, wherein the cell culture substrate includes a substrate and a layer formed by surface modification. The layer includes a polymer containing an amino group. The polymer is produced by reacting a polymer represented by formula (II): with a polymer having at least one amino group, —NH2, capable of forming a Schiff base in a monomer of formula (II), thereby forming a polymer layer constituting the layer formed by surface modification. “n” in Formula (II) is 0 or a positive integer, and m is a positive integer. n and m represent the degree of polymerization. Formula (II) is formed by chemical vapor deposition of formyl[2.2]paracyclophane. The methods further include providing cells in a medium; inoculating the cells onto the cell culture substrate; and culturing the cells, wherein the cells adhere to the cell culture substrate.
    Type: Grant
    Filed: February 3, 2011
    Date of Patent: February 26, 2013
    Assignees: Kisco Ltd., Daisan Kasei Co., Ltd., The University of Tokyo
    Inventors: Shin Ohya, Takashi Inoue, Takatoki Yamamoto, Teruo Fujii, Yasuyuki Sakai, Masaki Nishikawa, Hitomi Sakai, Hirosuke Naruto
  • Publication number: 20100034970
    Abstract: A chemical vapor deposition apparatus includes a charging section 10 for charging a feedstock material for vapor deposition, a decomposition oven 2 for decomposing a feedstock material for vapor deposition, an opening/closing valve 4 for interconnecting the charging section 10 and the decomposition oven 2, and a polymerization section 3 for polymerizing the feedstock material decomposed by the decomposition oven for depositing a coating film on the surface of a substrate. The feedstock material for vapor deposition charged into the charging section 10 is vaporized, and the so vaporized feedstock material is delivered to the decomposition oven 2 by opening the opening/closing valve 4 to deposit the coating film.
    Type: Application
    Filed: July 28, 2006
    Publication date: February 11, 2010
    Applicants: DAISANKASEI CO., LTD., KISCO LTD.
    Inventors: Tsutomu Mochizuki, Takashi Inoue, Kazuyoshi Uetake