Patents Assigned to KISELKARBID I STOCKHOLM AB
  • Publication number: 20240150929
    Abstract: A method is disclosed of growing an epitaxial layer on a substrate (20) of monocrystalline Silicon Carbide, SiC. The method comprises providing (S100) a source material (10) of monolithic polycrystalline SiC with a columnar micro-grain structure and the substrate (20) of monocrystalline SiC, in a chamber (5) of a crucible with a distance therein between, arranging (S102) a carbon getter (1) in said chamber (5) of the crucible close to the source material (10) and the substrate (20), said carbon getter (1) having a melting point higher than 2200° C. and an ability of forming a carbide layer with carbon species evaporated from SiC, reducing (S106) pressure in the chamber (5), inserting (S108) an inert gas into the chamber (5), raising (S110) the temperature in the chamber (5) to a growth temperature, such that a growth rate between 1 ?m/h and 1 mm/h, is achieved, and keeping (S112) the growth temperature until a growth of at least 5 ?m has been accomplished on the substrate (20).
    Type: Application
    Filed: February 18, 2022
    Publication date: May 9, 2024
    Applicant: KISELKARBID I STOCKHOLM AB
    Inventors: Li DONG, Johan EKMAN, Kassem ALASSAAD
  • Publication number: 20240150930
    Abstract: A system (100) for producing an epitaxial monocrystalline layer on a substrate (20) comprising: an inner container (30) defining a cavity (5) for accommodating a source material (10) and the substrate (20); an insulation container (50) arranged to accommodate the inner container (30) therein; an outer container (60) arranged to accommodate the insulation container (50) and the inner container (30) therein; and heating means (70) arranged outside the outer container (60) and configured to heat the cavity (5), wherein the inner container (30) comprises a support structure for supporting a solid monolithic source material (10) at a predetermined distance above the substrate (20) in the cavity (5) such that a growth surface of the substrate (20) is entirely exposed to the source material (10). A corresponding method is also disclosed.
    Type: Application
    Filed: February 18, 2022
    Publication date: May 9, 2024
    Applicant: KISELKARBID I STOCKHOLM AB
    Inventors: Lin DONG, Johan Peter EKMAN, Kassem ALASSAAD
  • Publication number: 20240068127
    Abstract: Provided is a system (100) for simultaneously producing a first and a second epitaxial monocrystalline layer on a respective first and second substrate, comprising a first inner container (3) defining a first cavity for accommodating a first source material and the first substrate, a second inner container (4) defining a second cavity for accommodating a second source material and the second substrate, an insulation container (6) arranged to accommodate the first and second inner containers (3, 4) therein, an outer container (7) arranged to accommodate the insulation container (6) and the first and second inner containers (3, 4) therein and heating means (8) arranged outside the outer container (7) and configured to heat the first and second cavities simultaneously.
    Type: Application
    Filed: February 18, 2022
    Publication date: February 29, 2024
    Applicant: KISELKARBID I STOCKHOLM AB
    Inventors: Lin DONG, Kassem ALASSAAD, Johan Peter EKMAN
  • Publication number: 20240052520
    Abstract: A system (100) for producing an epitaxial monocrystalline layer on a substrate (20) comprising: an inner container (30) defining a cavity (5) for accommodating a source material (10) and the substrate (20); an insulation container (50) arranged to accommodate the inner container (30) therein; an outer container (60) arranged to accommodate the insulation container (50) and the inner container (30) therein; and heating means (70) arranged outside the outer container (60) and configured to heat the cavity (5), wherein the inner container (30) comprises a plurality of spacer elements (320) arranged to support the substrate (20) at a predetermined distance above a solid monolithic source material (10), wherein each spacer element (320) comprises a base portion (321) and a top portion (322), wherein at least part of the top portion (322) tapers towards an apex (323) arranged to contact the substrate (20). A corresponding method is also disclosed.
    Type: Application
    Filed: February 18, 2022
    Publication date: February 15, 2024
    Applicant: KISELKARBID I STOCKHOLM AB
    Inventors: Johan Peter EKMAN, Lin DONG, Kassem ALASSAAD