Abstract: Strontium tetraborate is used as an optical coating material for optical components utilized in semiconductor inspection and metrology systems to take advantage of its high refractive indices, high optical damage threshold and high microhardness in comparison to conventional optical materials. At least one layer of strontium tetraborate is formed on the light receiving surface of an optical component's substrate such that its thickness serves to increase or decrease the reflectance of the optical component. One or multiple additional coating layers may be placed on top of or below the strontium tetraborate layer, with the additional coating layers consisting of conventional optical materials. The thicknesses of the additional layers may be selected to achieve a desired reflectance of the optical component at specific wavelengths. The coated optical component is used in an illumination source or optical system utilized in a semiconductor inspection system, a metrology system or a lithography system.

Abstract: A system for automated focus tracking of a sample is disclosed. The system comprises an illumination source, a set of illumination optics in an illumination path, a set of collection optics in a collection path, a first slit device in the illumination path, a second slit device in the collection path, at least one detector configured to generate an image of the sample, and a controller configured to receive through-focus information from the image, and provide corrective motion to a stage holding the sample to maintain a position of the sample at a selected focus. A method for automated focus tracking of a sample is also disclosed.

Abstract: A metrology system and metrology methods are disclosed. The metrology system comprises a set of device features on a first layer of a sample, a first set of target features on a second layer of the sample and overlapping the set of device features, and a second set of target features on the second layer of the sample and overlapping the set of device features. Relative positions of a first set of Moiré fringes and a second set of Moiré fringes indicate overlay error between the first layer of the sample and the second layer of the sample.

Abstract: A metrology system is disclosed, in accordance with one or more embodiments of the present disclosure. The metrology system includes a stage configured to secure a sample, one or more diffraction-based overlay (DBO) metrology targets disposed on the sample. The metrology system includes a light source and one or more sensors. The metrology system includes a set of optics configured to direct illumination light from the light source to the one or more DBO metrology targets of the sample, the set of optics including a half-wave plate, the half-wave plate selectively insertable into an optical path such that the half-wave plate selectively passes both illumination light from an illumination channel and collection light from a collection channel, the half-wave plate being configured to selectively align an orientation of linearly polarized illumination light from the light source to an orientation of a grating of the one or more DBO metrology targets.

Abstract: An overlay metrology tool may include an illumination source, illumination optics to illuminate an overlay target having periodic features with one or more illumination beams, collection optics to direct diffracted light from the periodic features of the overlay target to a detector, an adjustable pupil mask located at a pupil plane, and a controller. The adjustable pupil mask may include one or more individually-addressable control zones distributed across the one or more portions of the pupil plane to provide an adjustable pupil transmissivity distribution. The controller may direct the adjustable pupil mask to provide a selected pupil transmissivity distribution corresponding to a selected overlay metrology recipe, where the selected pupil transmissivity distribution corresponds to a selected configuration of the one or more control zones providing transmission of a selected set of diffraction orders from the target to the detector.

Abstract: The present disclosure is directed to a device having a nozzle for dispensing a liquid target material; one or more intermediary chamber(s), each intermediary chamber positioned to receive target material and formed with an exit aperture to output target material for downstream irradiation in a laser produced plasma (LPP) chamber. In some disclosed embodiments, control systems are included for controlling one or more of gas temperature, gas pressure and gas composition in one, some or all of a device's intermediary chamber(s). In one embodiment, an intermediary chamber having an adjustable length is disclosed.

Abstract: A first light source is directed at an outer surface of a workpiece in an inspection module. The light from the first light source that is reflected from the outer surface of the workpiece is directed to the camera via a first pathway. The light from the first light source transmitted through the workpiece is directed to the camera via a second pathway. A second light source is directed at the outer surface of the workpiece 180° from that of the first light source. The light from the second light source that is reflected from the outer surface of the workpiece is directed to the camera via the second pathway. The light from the second light source transmitted through the workpiece is directed to the camera via the first pathway.

Abstract: An overlay metrology system is disclosed. The overlay metrology system includes a controller configured to be communicatively coupled with an overlay metrology subsystem. The controller receives overlay measurements from the overlay metrology subsystem and generates one or more quality metrics. The controller extracts a set of principle components from the one or more quality metrics. The controller generates input data and inputs the input data into an input matrix of a supervised machine learning algorithm to train a predictive model. The controller then identifies a recipe or hardware configuration with a minimum residual value.

Abstract: An overlay metrology system includes a controller to receive, from an overlay metrology tool, overlay measurements on multiple sets of overlay targets on a sample with a range of values of a measurement parameter, where a particular set of overlay targets includes overlay targets having one of two or more overlay target designs. The controller may further determine scaling metric values for at least some of the overlay targets, where the scaling metric for a particular overlay target is based on a standard deviation of the overlay measurements of the corresponding set of overlay targets. The controller may further determine a variability of the scaling metric values for each of the two or more sets of overlay targets. The controller may further select, as an output overlay target design, one of the two or more overlay target designs having a smallest scaling metric variability.

Abstract: An electron beam system for wafer inspection and review of 3D devices provides a depth of focus up to 20 microns. To inspect and review wafer surfaces or sub-micron-below surface defects with low landing energies in hundreds to thousands of electron Volts, a Wien-filter-free beam splitting optics with three magnetic deflectors can be used with an energy-boosting upper Wehnelt electrode to reduce spherical and chromatic aberration coefficients of the objective lens.

Abstract: Reference and test waves are directed in a common path mode in a fiber tip diffraction interferometer. A first fiber can be used to generate the reference wave and a second fiber can be used to generate the test wave. Each fiber can include a single mode fiber tip that defines a wedge at an end without a coating on end surface or a tapered fiber tip. The fiber tip diffraction interferometer can include an aplanatic pupil imaging lens or system disposed to receive both the test wave and the reference wave and a sensor configured to receive both the test wave and the reference wave.

Abstract: Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering.

Abstract: A substrate-handling robot includes an end-effector to support a substrate and an arm, coupled to the end-effector, to translate the end-effector between an extended position and a retracted position. The substrate-handling robot also includes an enclosure to at least partially enclose the substrate with the substrate on the end-effector in the retracted position. The enclosure includes a shower to provide a flow of purge gas to the substrate.

Abstract: A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.

Abstract: With the disclosed systems and methods for DRAM and 3D NAND inspection, an image of the wafer is received based on the output for an inspection tool. Geometric measurements of a design of a plurality of memory devices on the wafer are received. A care area with higher inspection sensitivity is determined based on the geometric measurements.

Abstract: The method may be used for measuring an electric property of a magnetic tunnel junction used in an embedded MRAM memory for example. The method uses a multi point probe with a plurality of probe tips for contacting a designated area of the test sample, which is electrically insulated from the part of the test sample which is to be tested. Electrically connections are placed underneath the magnetic tunnel junction and goes to the designated area.

Abstract: A metrology system for characterizing a sample formed from a first wafer and a second wafer bonded at an interface with a metrology target near the interface may include a metrology tool and a controller. The metrology tool may include one or more illumination sources and an illumination sub-system to direct illumination from the one or more illumination sources to the metrology target, a detector, and a collection sub-system to collect light from the sample. The light collected from the sample may include light from the metrology target and light from a top surface of the first wafer, and the collection sub-system is may direct the light from the metrology target to the detector. The controller may execute program instructions causing the one or more processors to generate estimates of one or more parameters associated with the sample based on data received from the detector.

Abstract: An overlay metrology system may include, an illumination sub-system, a collection sub-system and a controller. The illumination sub-system may include one or more illumination optics configured to direct an illumination beam to an overlay target on a sample as the sample is scanned along a stage-scan direction by a translation stage, where the overlay target includes one or more cells having a grating-over-grating structure with periodicity along the stage-scan direction. The collection sub-system may include an objective lens, a first photodetector located in a pupil plane at a location of overlap between 0-order diffraction and +1-order diffraction, and a second photodetector located in a pupil plane at a location of overlap between 0-order diffraction and ?1-order diffraction. The controller may receive time-varying interference signals from the first and second photodetectors and determine an overlay error between the first and second layers of the sample along the stage-scan direction.

Abstract: A wafer alignment system includes an imaging sub-system, a controller, and a stage. The controller receives image data for reference point targets and determines a center location for each of the reference point targets. The center location determination includes identifying sub-patterns within a respective reference point target and identifying multiple center location candidates for the respective reference point target. The step of identifying the multiple center location candidates for the respective reference point target includes: applying a model to each identified sub-pattern of the respective reference point target, wherein the model generates a hotspot for each sub-pattern that identifies a center location candidate for the respective reference point target.

Abstract: Multi-beam e-beam columns and inspection systems that use such multi-beam e-beam columns are disclosed. A multi-beam e-beam column configured in accordance with the present disclosure may include an electron source and a multi-lens array configured to produce a plurality of beamlets utilizing electrons provided by the electron source. The multi-lens array may be further configured to shift a focus of at least one particular beamlet of the plurality of beamlets such that the focus of the at least one particular beamlet is different from a focus of at least one other beamlet of the plurality of beamlets.