Abstract: An illumination source may include two or more input light sources, a collector, and any combination of a beam uniformizer, a speckle reducer, or any number of output fibers to provide a selected illumination etendue. The collector may include one or more lenses to combine illumination from the two or more input light sources into an illumination beam, where the illumination from the two or more input light sources occupy different portions of an input aperture of the collector. The beam uniformizer may include a first noncircular-core fiber to receive the illumination beam, a second noncircular-core fiber, and one or more coupling lenses to relay a far-field distribution of the illumination beam from the first noncircular-core fiber to an input face of the second noncircular-core fiber to provide output light with uniform near-field and far-field distributions.

Abstract: A system for switching between an optical pellicle and an EUV pellicle includes one or more inspection tools configured to perform one or more inspection processes on a mask. The system includes one or more extreme ultraviolet (EUV) lithography tools configured to perform one or more lithographic exposures on the mask. The system includes a dual pellicle handler operatively coupled to the one or more inspection tools and the one or more EUV lithography tools, wherein the dual pellicle handler is configured to attach at least one of an optical pellicle or an EUV pellicle to the mask, wherein the dual pellicle handler is configured to detach at least one of the optical pellicle or the EUV pellicle from the mask.

Abstract: A system for defect review and classification is disclosed. The system may include a controller, wherein the controller may be configured to receive one or more training images of a specimen. The one or more training images including a plurality of training defects. The controller may be further configured to apply a plurality of difference filters to the one or more training images, and receive a signal indicative of a classification of a difference filter effectiveness metric for at least a portion of the plurality of difference filters. The controller may be further configured to generate a deep learning network classifier based on the received classification and the attributes of the plurality of training defects. The controller may be further configured to extract convolution layer filters of the deep learning network classifier, and generate one or more difference filter recipes based on the extracted convolution layer filters.

Abstract: An apparatus includes a substrate, a nested enclosure assembly including an outer enclosure and an inner enclosure, wherein the outer enclosure encloses the inner enclosure and the inner enclosure encloses at least the electronic assembly. An insulating medium is disposed within a cavity between the outer surface of the inner enclosure and the inner surface of the outer enclosure and the system includes a sensor assembly communicatively coupled to the electronic assembly. The sensor assembly includes one or more sensors that are configured to acquire one or more measurement parameters at one or more locations of the substrate. The electronic assembly is configured to receive the one or more measurement parameters from the one or more sensors.

Abstract: Optical elements that efficiently propagate x-ray radiation over a desired energy range and reject radiation outside the desired energy range are presented herein. In one aspect, one or more optical elements of an x-ray based system include an integrated optical filter including one or more material layers that absorb radiation having energy outside the desired energy band. In general, the integrated filter improves the optical performance of an x-ray based system by suppressing reflectivity within infrared (IR), visible (vis), ultraviolet (UV), extreme ultraviolet (EUV) portions of the spectrum, or any other undesired wavelength region. In a further aspect, one or more diffusion barrier layers prevent degradation of the integrated optical filter, prevent diffusion between the integrated optical filter and other material layers, or both. In some embodiments, the thickness of one or more material layers of an integrated optical filter vary over the spatial area of the filter.

Abstract: Methods and systems for performing high throughput spectroscopic measurements of semiconductor structures at mid-infrared wavelengths are presented herein. A Fourier Transform Infrared (FTIR) spectrometer includes one or more measurement channels spanning a wavelength range between 2.5 micrometers and 12 micrometers. The FTIR spectrometer measures a target at multiple different angles of incidence, azimuth angles, different wavelength ranges, different polarization states, or any combination thereof. In some embodiments, illumination light is provided by a laser sustained plasma (LSP) light source to achieve high brightness and small illumination spot size. In some embodiments, FTIR measurements are performed off-axis from the direction normal to the surface of the wafer. In some embodiments, a Stirling cooler extracts heat from the detector of an FTIR spectrometer.

Abstract: A system for defining flexible regions on a sample is disclosed. The system includes an inspection system configured to acquire one or more swath images. The system includes a controller communicatively coupled to the inspection system, the controller configured to: generate one or more median reference die (MRD) images based on the one or more swath images; generate one or more flexible region masks based on the one or more MRD images; identify a set of alignment sites on the one or more flexible region masks based on one or more coordinates of the one or more MRD images; perform patch-to-mask alignment between the one or more flexible region masks and one or more scan images by aligning the scan images and the one or more MRD images at the identified set of alignment sites; and position the one or more flexible region masks on the scan images.

Abstract: An assembly for clamping semiconductor wafers includes a plate and an electrostatic chuck mounted on the plate. A plurality of slots extends between respective portions of the electrostatic chuck to receive arms of an end-effector of a wafer-handler. The arms of the end-effector support semiconductor wafers being placed onto and removed from the electrostatic chuck.

Abstract: A system for pumping laser sustained plasma is disclosed. The system includes a plurality of pump modules configured to generate respective pulses of pump illumination for the laser sustained plasma, wherein at least one pump module is configured to generate a train of pump pulses that is interlaced in time with another train of pump pulses generated by at least one other pump module of the plurality of pump modules. The system further includes a plurality of non-collinear illumination paths configured to direct the respective pulses of pump illumination from the plurality of pump modules into a collection volume of the laser sustained plasma.

Abstract: A scanning electron microscopy system with improved image beam stability is disclosed. The system includes an electron beam source configured to generate an electron beam and a set of electron-optical elements to direct at least a portion of the electron beam onto a portion of the sample. The system includes an emittance analyzer assembly. The system includes a splitter element configured to direct at least a portion secondary electrons and/or backscattered electrons emitted by a surface of the sample to the emittance analyzer assembly. The emittance analyzer assembly is configured to image at least one of the secondary electrons and/or the backscattered electrons.

Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

Abstract: An optical characterization system and a method of using the same are disclosed. The system comprises a controller configured to be communicatively coupled with one or more detectors configured to receive illumination from a sample and generate image data. One or more processors may be configured to receive images of dies on the sample, calculate dissimilarity values for all combinations of the images, perform a cluster analysis to partition the combinations of the images into two or more clusters, generate a reference image for a cluster of the two or more clusters using two or more of the combinations of the images in the cluster; and detect one or more defects on the sample by comparing a test image in the cluster to the reference image for the cluster.

Abstract: A multipole illumination system may include an illumination source to generate a source beam, one or more acousto-optic deflectors to diffract the source beam along at least two directions; one or more collection lenses to collect at least some of the diffracted light from the one or more acousto-optic deflectors, and a controller to generate one or more drive signals for the one or more acousto-optic deflectors. For example, the one or more drive signals may cause the one or more acousto-optic deflectors to generate a symmetric distribution of two or more illumination beams formed from light diffracted from the one or more acousto-optic deflectors and collected by the one or more collection lenses, where a distribution of wavelength and intensity of the two or more illumination beams is symmetric in a plane formed by the first and second directions.

Abstract: A system for reducing printable defects on a pattern mask is disclosed. The system includes a controller configured to be communicatively coupled to a characterization sub-system, the controller including one or more processors configured to execute program instructions causing the one or more processors to: direct the characterization sub-system to perform inspection of a mask blank; generate a cost function based on a first characteristic and a second characteristic, the first characteristic comprising areas of defect regions exposed by mask patterns, the second characteristic comprising pattern complexity of a design pattern; determine one or more values indicative of a minimum of the cost function via a non-linear optimization procedure; and generate one or more control signals to adjust rotation and translation of the mask blank relative to the design pattern based on the determined one or more values indicative of the minimum of the cost function.

Abstract: An inspection system includes an illumination source configured to generate extreme ultraviolet (EUV) light, illumination optics to direct the EUV light to a sample within a range of off-axis incidence angles corresponding to an illumination pupil distribution, collection optics to collect light from the sample in response to the incident EUV light within a range of collection angles corresponding to an imaging pupil distribution, and a detector configured to receive at least a portion of the light collected by the collection optics. Further, a center of the illumination pupil distribution corresponds to an off-axis incidence angle along a first direction on the sample, and at least one of the illumination pupil distribution or the imaging pupil distribution is non-circular with a size along the first direction shorter than along a second direction perpendicular to the first direction.

Abstract: Care areas for a first image of a die can be determined according to a 1D offset correction. The 1D offset correction can be based on 1D offsets between the first image and a second image for each of the image frames and also can be based on 1D offsets between a design and the second image for each of the image frames. The care areas can have a zero border for a dimension that is aligned to the design and a legacy border for the other dimension.

Abstract: An image sensor utilizes a pure boron layer and a second epitaxial layer having a p-type dopant concentration gradient to enhance sensing DUV, VUV or EUV radiation. Sensing (circuit) elements and associated metal interconnects are fabricated on an upper surface of a first epitaxial layer, then the second epitaxial layer is formed on a lower surface of the first epitaxial layer, and then a pure boron layer is formed on the second epitaxial layer. The p-type dopant concentration gradient is generated by systematically increasing a concentration of p-type dopant in the gas used during deposition/growth of the second epitaxial layer such that a lowest p-type dopant concentration of the second epitaxial layer occurs immediately adjacent to the interface with the first epitaxial layer, and such that a highest p-type dopant concentration of the second epitaxial layer occurs immediately adjacent to the interface with pure boron layer.

Abstract: An apparatus, a method and a computer program product for defect detection in work pieces is disclosed. At least one light source is provided and the light source generates an illumination light of a wavelength range at which the work piece is transparent. A camera images the light from at least one face of the work piece on a detector of the camera by means of a lens. A stage is used for moving the work piece and for imaging the at least one face of the semiconductor device completely with the camera. The computer program product is disposed on a non-transitory, computer readable medium for defect detection in work pieces. A computer is used to execute the various process steps and to control the various means of the apparatus.

Abstract: An inspection system and a method of using the same are disclosed. The inspection system comprises an illumination source configured to emit an extreme ultraviolet (EUV) illumination beam for illuminating a sample, one or more first multi-cell detectors configured to generate a first illumination intensity distribution signal based on a first photocurrent, one or more second multi-cell detectors configured to generate a second illumination intensity distribution signal based on a second photocurrent, a detector assembly configured to receive the illumination beam and generate images, and a controller configured to: receive the images from the detector assembly, calibrate the second illumination intensity distribution signal to the images by mapping distortions in the second illumination intensity distribution signal to distorted pixels in the images, increase or decrease intensities of the distorted pixels in the images to generate corrected images, and detect defects on the samples.

Abstract: An instrumented substrate apparatus is configured to measure wavelength-resolved radiation, such as extreme ultraviolet radiation. The instrumented substrate apparatus includes a substrate and photoelectric sensors on the substrate. The photoelectric sensors include a photoemissive material, a photoelectron collector, and a measurement circuit. The measurement circuit is electrically coupled to the photoemissive material and the photoelectron collector. The measurement circuit is configured to measure a current generated by the photoelectron collectors by a current meter. Such current is used to determine the wavelength-resolved EUV measurement information by a controller on the instrumented substrate apparatus, or by communicating the current to a factory automation system.