Abstract: A method and inspection system to inspect a first pattern on a specimen for defects against a second pattern that is intended to be the same where the second pattern has known responses to at least one probe. The inspection is performed by applying at least one probe to a point of the first pattern on the specimen to generate at least two responses from the specimen. Then the first and second responses are detected from the first pattern, and each of those responses is then compared with the corresponding response from the same point of the second pattern to develop first and second response difference signals. Those first and second response difference signals are then processed together to unilaterally determine a first pattern defect list.

Abstract: A method and inspection system to inspect a first pattern on a specimen for defects against a second pattern that is intended to be the same where the second pattern has known responses to at least one probe. The inspection is performed by applying at least one probe to a point of the first pattern on the specimen to generate at least two responses from the specimen. Then the first and second responses are detected from the first pattern, and each of those responses is then compared with the corresponding response from the same point of the second pattern to develop first and second response difference signals. Those first and second response difference signals are then processed together to unilaterally determine a first pattern defect list.

Abstract: A method and apparatus, and variations of each, for inspecting a wafer defining at least one die thereon is disclosed. The present invention first obtains the electronic image equivalent of two die, and then determines the x and y offset between those electronic images. Prior to inspection for defects, those two electronic images are aligned by adjusting the x and y positions of one electronic image of one die with respect to the electronic image of the other die. Once that is accomplished, the those electronic images are compared to detect any defects that may exist on one of the die.

Abstract: An ultraviolet (UV) catadioptric imaging system, with broad spectrum correction of primary and residual, longitudinal and lateral, chromatic aberrations for wavelengths extending into the deep UV (as short as about 0.16 &mgr;m), comprises a focusing lens group with multiple lens elements that provide high levels of correction of both image aberrations and chromatic variation of aberrations over a selected wavelength band, a field lens group formed from lens elements with at least two different refractive materials, such as silica and a fluoride glass, and a catadioptric group including a concave reflective surface providing most of the focusing power of the system and a thick lens providing primary color correction in combination with the focusing lens group. The field lens group is located near the intermediate image provided by the focusing lens group and functions to correct the residual chromatic aberrations. The system is characterized by a high numerical aperture (typ, greater than 0.

Abstract: A method and apparatus, and variations of each, for inspecting a wafer defining at least one die thereon is disclosed. The present invention first obtains the electronic image equivalent of two die, and then determines the x and y offset between those electronic images. Prior to inspection for defects, those two electronic images are aligned by adjusting the x and y positions of one electronic image of one die with respect to the electronic image of the other die. Once that is accomplished, the those electronic images are compared to detect any defects that may exist on one of the die.

Abstract: A method and apparatus, and variations of each, for inspecting a wafer defining at least one die thereon is disclosed. The present invention first obtains the electronic image equivalent of two die, and then determines the x and y offset between those electronic images. Prior to inspection for defects, those two electronic images are aligned by adjusting the x and y positions of one electronic image of one die with respect to the electronic image of the other die. Once that is accomplished, those electronic images are compared to detect any defects that may exist on one of the die.

Abstract: Broad spectrum ultraviolet inspection methods employ an achromatic catadioptric system to image the surface of an object, such as a semiconductor wafer or photomask, at multiple ultraviolet (UV) wavelengths over a large flat field (with a size on the order of 0.5 mm) in order to detect and identify defects. The imaging system provides broad band correction of primary and residual, longitudinal and lateral, chromatic aberrations for wavelengths extending into the deep UV. UV imaging applications include a method that illuminates an object with fluorescence-excitation radiation to stimulate fluorescent emission at a plurality of UV wavelengths, then images the fluorescent emissions and detects the images so formed in UV wavelength bands distributed over at least 50 nm (preferably 100-200 nm) wavelength. Photoresist patterns can be analyzed in this way.

Abstract: The present invention is a method and apparatus that uses a microscopic height variation positioned relative to a semiconductor device to scan a target on the device to produce an electrical signal representative of height variations of first and second periodic structures of the target in a selected path across the device, and a computing and control system to provide translation between the microscopic height variation detector and the target on the device in a selected path, and to calculate any offset between the first periodic structure and the second periodic structure of the target from the electrical signals from the microscopic height variation detector. The first periodic structure of the target is on a first layer of the device, and the second periodic structure, that complements the first periodic structure, is on a second layer of the device at a location that is adjacent the first periodic structure.

Abstract: A method and inspection system to inspect a first pattern on a specimen for defects against a second pattern that is intended to be the same where the second pattern has known responses to at least one probe. The inspection is performed by applying at least one probe to a point of the first pattern on the specimen to generate at least two responses from the specimen. Then the first and second responses are detected from the first pattern, and each of those responses is then compared with the corresponding response from the same point of the second pattern to develop first and second response difference signals. Those first and second response difference signals are then processed together to unilaterally determine a first pattern defect list.

Abstract: Techniques for improving manufacturing process control based on inspection of manufactured items at intermediate process steps, based on clustering and binning of defect data. Additionally, the using the defect data produced by inspection machines to improve manufacturing process control specifically relating to semiconductor manufacturing process control. Examples described here relate specifically to semiconductor wafers, but may be generalized to any manufacturing process.

Abstract: An ultraviolet (UV) catadioptric imaging system, with broad spectrum correction of primary and residual, longitudinal and lateral, chromatic aberrations for wavelengths extending into the deep UV (as short as about 0.16 .mu.m), comprises a focusing lens group with multiple lens elements that provide high levels of correction of both image aberrations and chromatic variation of aberrations over a selected wavelength band, a field lens group formed from lens elements with at least two different refractive materials, such as silica and a fluoride glass, and a catadioptric group including a concave reflective surface providing most of the focusing power of the system and a thick lens providing primary color correction in combination with the focusing lens group. The field lens group is located near the intermediate image provided by the focusing lens group and functions to correct the residual chromatic aberrations. The system is characterized by a high numerical aperture (type. greater than 0.

Abstract: An angle-dependent reflectometer or transmissometer includes an optical imaging array in the incident and reflected or transmitted light path that breaks up an incident light beam into mutually spatially incoherent light bundles. The individual light bundles are then focused to a common spot by a high numerical aperture objective lens so as to provide a range of incidence angles on a sample surface. In a reflectometer, reflected light returns through the objective lens and imaging array and is imaged onto a detector array where different incidence and reflection angles are received by different groups of detection elements. In the angle-dependent transmissometer, the imaging array and high numerical aperture focusing objective lens are used for illuminating a spot on the sample, with a second high numerical aperture collection objective lens and detector array used for receiving transmitted light over a wide range of collection angles.

Abstract: A method and inspection system to inspect a first pattern on a specimen for defects against a second pattern that is intended to be the same where the second pattern has known responses to at least one probe. The inspection is performed by applying at least one probe to a point of the first pattern on the specimen to generate at least two responses from the specimen. Then the first and second responses are detected from the first pattern, and each of those responses is then compared with the corresponding response from the same point of the second pattern to develop first and second response difference signals. Those first and second response difference signals are then processed together to unilaterally determine a first pattern defect list.

Abstract: A method and apparatus for inspecting patterned transmissive substrates, such as photomasks, for unwanted particles and features occurring on the transmissive, opaque portions and at the transition regions of the opaque and transmissive portions of the substrate. A transmissive substrate is illuminated by a laser through an optical system comprised of a laser scanning system, individual transmitted and reflected light collection optics and detectors collect and generate signals representative of the light transmitted and reflected by the substrate as the substrate is scanned repeatedly in one axis in a serpentine pattern by a laser beam which is focused on the patterned substrate surface. The defect identification of the substrate is performed using only those transmitted and reflected light signals, and other signals derived from them, such as the second derivative of each of them.

Abstract: An apparatus scans an electron beam across an optical phase shift mask and automatically inspects the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x - y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.

Abstract: An ultraviolet (UV) catadioptric imaging system, with broad spectrum correction of primary and residual, longitudinal and lateral, chromatic aberrations for wavelengths extending into the deep UV (as short as about 0.16 .mu.m), comprises a focusing lens group with multiple lens elements that provide high levels of correction of both image aberrations and chromatic variation of aberrations over a selected wavelength band, a field lens group formed from lens elements with at least two different refractive materials, such as silica and a fluoride glass, and a catadioptric group including a concave reflective surface providing most of the focusing power of the system and a thick lens providing primary color correction in combination with the focusing lens group. The field lens group is located near the intermediate image provided by the focusing lens group and functions to correct the residual chromatic aberrations. The system is characterized by a high numerical aperture (typ. greater than 0.

Abstract: There is disclosed an apparatus to scan an electron beam across an optical phase shift mask and automatically inspect the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x-y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.

Abstract: Method and apparatus for detecting non-uniformities in reflective surfaces, including an electro-luminescent panel for providing a substantially uniform illumination of the reflective surface of a planar object, such as a silicon wafer to be inspected, a camera positioned at an angle suitable for detecting light reflected from the inspected surface and for generating an output representative of the intensity of light reflected from each pixel of the reflective surface, and processing apparatus communicatively coupled to the camera and responsive to the output generated by the camera to in turn generate an output indicative of the surface uniformity of the surface under inspection. The preferred embodiment will normally include an appropriate housing or baffle structure for limiting the light viewed by the camera to that from the source as reflected by the surface being inspected, and may further include wafer-handling means and camera-positioning means.

Abstract: A method and apparatus for a charged particle scanning system and an automatic inspection system, including wafers and masks used in microcircuit fabrication. A charged particle beam is directed at the surface of a substrate for scanning that substrate and a selection of detectors are included to detect at least one of the secondary charged particles, back-scattered charged particles and transmitted charged particles from the substrate. The substrate is mounted on an x-y stage to provide at least one degree of freedom while the substrate is being scanned by the charged particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary charged particles. The system facilitates inspection at low beam energies on charge sensitive insulating substrates and has the capability to accurately measure the position of the substrate with respect to the charged particle beam.

Abstract: An automated photomask inspection apparatus including an XY state (12) for transporting a substrate (14) under test in a serpentine path in an XY plane, an optical system (16) comprising a laser (30), a transmission light detector (34), a reflected light detector (36), optical elements defining reference beam paths and illuminating beam paths between the laser, the substrate and the detectors and an acousto-optical beam scanner (40, 42) for reciprocatingly scanning the illuminating and reference beams relative to the substrate surface, and an electronic control, analysis and display system for controlling the operation of the stage and optical system and for interpreting and storing the signals output by the detectors. The apparatus can operate in a die-to-die comparison mode or a die-to-database mode.