Abstract: Methods and systems for training an inspection-related algorithm are provided. One system includes one or more computer subsystems configured for performing an initial training of an inspection-related algorithm with a labeled set of defects thereby generating an initial version of the inspection-related algorithm and applying the initial version of the inspection-related algorithm to an unlabeled set of defects. The computer subsystem(s) are also configured for altering the labeled set of defects based on results of the applying. The computer subsystem(s) may then iteratively re-train the inspection-related algorithm and alter the labeled set of defects until one or more differences between results produced by a most recent version and a previous version of the algorithm meet one or more criteria. When the one or more differences meet the one or more criteria, the most recent version of the inspection-related algorithm is outputted as the trained algorithm.

Abstract: Methods and systems for determining parameter(s) of a metrology process to be performed on a specimen are provided. One system includes one or more computer subsystems configured for automatically generating regions of interest (ROIs) to be measured during a metrology process performed for the specimen with the measurement subsystem based on a design for the specimen. The computer subsystem(s) are also configured for automatically determining parameter(s) of measurement(s) performed in first and second subsets of the ROIs during the metrology process with the measurement subsystem based on portions of the design for the specimen located in the first and second subsets of the ROIs, respectively. The parameter(s) of the measurement(s) performed in the first subset are determined separately and independently of the parameter(s) of the measurement(s) performed in the second subset.

Abstract: Methods and systems for determining a configuration for an optical element positioned in a collection aperture during wafer inspection are provided. One system includes a detector configured to detect light from a wafer that passes through an optical element, which includes a set of collection apertures, when the optical element has different configurations thereby generating different images for the different configurations. The system also includes a computer subsystem configured for constructing additional image(s) from two or more of the different images, and the two or more different images used to generate any one of the additional image(s) do not include only different images generated for single collection apertures in the set. The computer subsystem is further configured for selecting one of the different or additional configurations for the optical element based on the different images and the additional image(s).

Abstract: Methods and systems for determining a position of a defect in an electron beam image of a wafer are provided. One method includes determining a second position of a defect with respect to patterns imaged in a test image based on a first position of the defect in a difference image. The method also includes determining a third position of the defect with respect to the patterns in an electron beam image for the defect and determining an association between the first and third positions. In addition, the method includes determining a position of another defect in an electron beam image based on a first position of the other defect in a difference image and the determined association.

Abstract: Methods and systems for detecting defects on a specimen are provided. One system includes a generative model. The generative model includes a non-linear network configured for mapping blocks of pixels of an input feature map volume into labels. The labels are indicative of one or more defect-related characteristics of the blocks. The system inputs a single test image into the generative model, which determines features of blocks of pixels in the single test image and determines labels for the blocks based on the mapping. The system detects defects on the specimen based on the determined labels.

Abstract: Methods and systems for detecting anomalies in images of a specimen are provided. One system includes one or more computer subsystems configured for acquiring images generated of a specimen by an imaging subsystem. The computer subsystem(s) are also configured for determining one or more characteristics of the acquired images. In addition, the computer subsystem(s) are configured for identifying anomalies in the images based on the one or more determined characteristics without applying a defect detection algorithm to the images or the one or more characteristics of the images.

Abstract: Methods and systems for detecting defects on a specimen are provided. One method includes identifying first and second portions of dies on a specimen as edge dies and center dies, respectively. The method also includes determining first and second inspection methods for the first and second portions, respectively. Parameter(s) of comparisons performed in the first and second inspection methods are different. The method further includes detecting defects in at least one of the edge dies using the first inspection method and detecting defects in at least one of the center dies using the second inspection method.

Abstract: Systems and methods for classifying defects detected on a wafer are provided. One method includes detecting defects on a wafer based on output generated for the wafer by an inspection system. The method also includes determining one or more attributes for at least one of the defects based on portions of a standard reference image corresponding to the at least one of the defects. The method further includes classifying the at least one of the defects based at least in part on the one or more determined attributes.

Abstract: Methods and systems for determining coordinates for an area of interest on a specimen are provided. One system includes one or more computer subsystems configured for, for an area of interest on a specimen being inspected, identifying one or more targets located closest to the area of interest. The computer subsystem(s) are also configured for aligning one or more images for the one or more targets to a reference for the specimen. The image(s) for the target(s) and an image for the area of interest are acquired by an inspection subsystem during inspection of the specimen. The computer subsystem(s) are further configured for determining an offset between the image(s) for the target(s) and the reference based on results of the aligning and determining modified coordinates of the area of interest based on the offset and coordinates of the area of interest reported by the inspection subsystem.

Abstract: Methods and systems for finding patterns in a design for a specimen are provided. One system includes one or more computer subsystems configured for searching for a target pattern in a design for a specimen to thereby find multiple instances of the target pattern in the design. The one or more computer subsystems are also configured for separating the multiple instances of the target pattern into different groups based on information for surrounding patterns within a predefined window around the target pattern such that each of the different groups corresponds to a different combination of the target pattern and the surrounding patterns.

Abstract: Methods and systems for determining overlay error between different patterned features of a design printed on a wafer in a multi-patterning step process are provided. For multi-patterning step designs, the design for a first patterning step is used as a reference and designs for each of the remaining patterning steps are synthetically shifted until the synthetically shifted designs have the best global alignment with the entire image based on global image-to-design alignment. The final synthetic shift of each design for each patterning step relative to the design for the first patterning step provides a measurement of relative overlay error between any two features printed on the wafer using multi-patterning technology.

Abstract: Methods and systems for generating simulated output for a specimen are provided. One method includes acquiring information for a specimen with one or more computer systems. The information includes at least one of an actual optical image of the specimen, an actual electron beam image of the specimen, and design data for the specimen. The method also includes inputting the information for the specimen into a learning based model. The learning based model is included in one or more components executed by the one or more computer systems. The learning based model is configured for mapping a triangular relationship between optical images, electron beam images, and design data, and the learning based model applies the triangular relationship to the input to thereby generate simulated images for the specimen.

Abstract: Methods and systems for detecting defects on a wafer are provided. One system includes one or more computer subsystems configured for generating a rendered image based on information for a design printed on the wafer. The rendered image is a simulation of an image generated by the optical inspection subsystem for the design printed on the wafer. The computer subsystem(s) are also configured for comparing the rendered image to an optical image of the wafer generated by the optical inspection subsystem. The design is printed on the wafer using a reticle. In addition, the computer subsystem(s) are configured for detecting defects on the wafer based on results of the comparing.

Abstract: Methods and systems for generating a wafer inspection process are provided. One method includes storing output of detector(s) of an inspection system during scanning of a wafer regardless of whether the output corresponds to defects detected on the wafer and separating physical locations on the wafer that correspond to bit failures detected by testing of the water into a first portion of the physical locations at which the defects were not detected and a second portion of the physical locations at which the defects were detected. In addition, the method includes applying defect detection method(s) to the stored output corresponding to the first portion of the physical locations to detect defects at the first portion of the physical locations and generating a wafer inspection process based on the defects detected by the defect detection method(s) at the first portion of the physical locations.

Abstract: Methods and systems for determining a position of output generated by an inspection subsystem in design data space are provided. In general, some embodiments described herein are configured for substantially accurately aligning inspection subsystem output generated for a specimen to a design for the specimen despite deformation of the design in the inspection subsystem output. In addition, some embodiments are configured for generating and/or using alignment targets that can be shared across multiple specimens of the same layer and design rule for alignment of inspection subsystem output generated for a specimen to a design for the specimen.

Abstract: Hybrid inspectors are provided. One system includes computer subsystem(s) configured for receiving optical based output and electron beam based output generated for a specimen. The computer subsystem(s) include one or more virtual systems configured for performing one or more functions using at least some of the optical based output and the electron beam based output generated for the specimen. The system also includes one or more components executed by the computer subsystem(s), which include one or more models configured for performing one or more simulations for the specimen. The computer subsystem(s) are configured for detecting defects on the specimen based on at least two of the optical based output, the electron beam based output, results of the one or more functions, and results of the one or more simulations.

Abstract: Methods and systems for detecting defects on a wafer are provided. One system includes one or more computer subsystems configured for generating a rendered image based on information for a design printed on the wafer. The rendered image is a simulation of an image generated by an optical inspection subsystem for the design printed on the wafer. Generating the rendered image includes one or more steps, and the computer subsystem(s) are configured for performing at least one of the one or more steps by executing a generative model. The computer subsystem(s)) are also configured for comparing the rendered image to an optical image of the wafer generated by the optical inspection subsystem. The design is printed on the wafer using a reticle. In addition, the computer subsystem(s) are configured for detecting defects on the wafer based on results of the comparing.

Abstract: Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to direct pulses of light to an area on a wafer; a scanning subsystem configured to scan the pulses of light across the wafer; a collection subsystem configured to image pulses of light scattered from the area on the wafer to a sensor, wherein the sensor is configured to integrate a number of the pulses of scattered light that is fewer than a number of the pulses of scattered light that can be imaged on the entire area of the sensor, and wherein the sensor is configured to generate output responsive to the integrated pulses of scattered light; and a computer subsystem configured to detect defects on the wafer using the output generated by the sensor.

Abstract: Methods and systems for determining a process window for a process performed on a specimen are provided. In general, the embodiments preferentially sample locations in an instance of at least a portion of a device formed on a specimen at a value of a parameter of a process performed on the specimen that is closest to an edge of a determined process window for the process. If defects are detected at the sampled locations, then the sampling may be performed again but for a different instance of the device formed at a value of the parameter that is closer to nominal than the previously used value. When no defects are detected at the sampled locations, then the sampling may be ended, and the determined process window may be modified based on the value of the parameter corresponding to the instance of the device in which no defects were detected.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.