Abstract: Systems and methods for determining information for a wafer are provided. One system includes a first grating that diffracts light from a wafer having wavelengths in a first portion of a broadband range and does not diffract the light from the wafer having wavelengths in a second portion of the broadband range. The system also includes a second grating positioned in the path of the light that is not diffracted by the first grating. The second grating diffracts the light from the wafer having the wavelengths in the second portion of the broadband range. The system further includes a first detector configured to generate first output responsive to the light diffracted by the first grating and a second detector configured to generate second output responsive to the light diffracted by the second grating.

Abstract: Various metrology systems and methods for high aspect ratio and large lateral dimension structures are provided. One method includes directing light to one or more structures formed on a wafer. The light includes ultraviolet light, visible light, and infrared light. The one or more structures include at least one high aspect ratio structure or at least one large lateral dimension structure. The method also includes generating output responsive to light from the one or more structures due to the light directed to the one or more structures. In addition, the method includes determining one or more characteristics of the one or more structures using the output.

Abstract: Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.

Abstract: Methods and systems for segmenting pixels for wafer inspection are provided. One method includes determining a statistic for individual pixels based on a characteristic of the individual pixels in an image acquired for a wafer by an inspection system. The method also includes assigning the individual pixels to first segments based on the statistic. In addition, the method includes detecting one or more edges between the first segments in an image of the first segments and generating an edge map by projecting the one or more edges across an area corresponding to the image for the wafer. The method further includes assigning the individual pixels to second segments by applying the first segments and the edge map to the image for the wafer thereby segmenting the image. Defect detection is performed based on the second segments to which the individual pixels are assigned.

Abstract: Methods and systems for binning defects on a wafer are provided. One method includes identifying areas in a design for a layer of a device being fabricated on a wafer that are not critical to yield of fabrication of the device and generating an altered design for the layer by eliminating features in the identified areas from the design for the layer. The method also includes binning defects detected on the layer into groups using the altered design such that features in the altered design proximate positions of the defects in each of the groups are at least similar.

Abstract: Various embodiments for determining dynamic care areas are provided. In one embodiment, a first inspection process is performed on a wafer after a first fabrication step has been performed on the wafer and before a second fabrication process has been performed on the wafer. One embodiment includes determining care areas for a second inspection process based on inspection results generated by the first inspection process. The second inspection process will be performed on the wafer after the second fabrication step has been performed on the wafer.

Abstract: Methods and systems for detecting defects on a wafer are provided.

Abstract: Various embodiments for substrate inspection are provided.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes combining first image data and second image data, generated using different output generated using different values for focus of an inspection system, corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer and detecting defects on the wafer using the additional image data.

Abstract: Computer-implemented methods, computer-readable media, and systems for determining one or more characteristics of a wafer are provided.

Abstract: Systems and methods for process aware metrology are provided.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Abstract: Illumination subsystems for multi-spot wafer inspection are provided.

Abstract: Various metrology systems and methods are provided.

Abstract: Computer-implemented methods for inspecting and/or classifying a wafer are provided. One computer-implemented includes detecting defects on a wafer using one or more defect detection parameters, which are determined based on a non-spatially localized characteristic of the wafer that is determined using output responsive to light scattered from the wafer generated by an inspection system. Another computer-implemented method includes classifying a wafer based on a combination of a non-spatially localized characteristic of the wafer determined using output responsive to light scattered from the wafer generated by an inspection system and a spatially localized characteristic of the wafer determined using the output.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Abstract: Computer-implemented methods and systems for detecting defects in a reticle design pattern are provided. One computer-implemented method includes acquiring images of the reticle design pattern using a sensor disposed on a substrate arranged proximate to an image plane of an exposure system configured to perform a wafer printing process using the reticle design pattern. The images illustrate how the reticle design pattern will be projected on a wafer by the exposure system at different values of one or more parameters of the wafer printing process. The method also includes detecting defects in the reticle design pattern based on a comparison of two or more of the images corresponding to two or more of the different values.

Abstract: Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer are provided. One computer-implemented method for generating a standard reference die for use in a die to standard reference die inspection includes acquiring output of an inspection system for a centrally located die on a wafer and one or more dies located on the wafer. The method also includes combining the output for the centrally located die and the one or more dies based on within die positions of the output. In addition, the method includes generating the standard reference die based on results of the combining step.

Abstract: Methods and systems for classifying defects detected on a reticle are provided. One method includes determining an impact that a defect detected on a reticle will have on the performance of a device being fabricated on a wafer based on how at least a portion of the reticle prints or will print on the wafer. The defect is located in the portion of the reticle. The method also includes assigning a classification to the defect based on the impact.

Abstract: Various methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions are provided. One computer-implemented method includes using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions. The one or more defect-related functions include one or more post-mask, defect-related functions.