Abstract: A method for inspecting semiconductor wafers is provided in which a plurality of independent, low-cost, optical-inspection subsystems are packaged and integrated to simultaneously perform parallel inspections of portions of the wafer, the wafer location relative to the inspection being controlled so that the entire wafer is imaged by the system of optical subsystems in a raster-scan mode. A monochromatic coherent-light source illuminates the wafer surface. A darkfield-optical system collects scattered light and filters patterns produced by valid periodic wafer structures using Fourier filtering. The filtered light is processed by general purpose digital-signal processors. Image subtraction methods are used to detect wafer defects, which are reported to a main computer to aid in statistical process control, particularly for manufacturing equipment.

Abstract: A system for transporting an article between a loading station and an inspection stage includes a novel support for safely retaining the article during transit. The support includes a number of article-retaining members, at least one of which is connected to an actuator. The actuator clamps the article between the article-retaining members during transit. To ensure that the article is not dropped or damaged during transit, the system includes an un-clamp sensor connected to at least one of the article-retaining members. The un-clamp sensor is connected to a robot controller so that the system may be shut down immediately should the article become unclamped during transit. The system also includes novel loading and inspection stages that ensure proper orientation and placement of articles prior to transit from one to the other, further reducing risk of damage to transported articles.

Abstract: An apparatus and method for inspecting a surface of a sample, particularly but not limited to a semiconductor device, using an electron beam is presented. The technique is called Secondary Electron Emission Microscopy (SEEM), and has significant advantages over both Scanning Electron Microscopy (SEM) and Low Energy Electron Microscopy (LEEM) techniques. In particular, the SEEM technique utilizes a beam of relatively high-energy primary electrons having a beam width appropriate for parallel, multi-pixel imaging. The electron energy is near a charge-stable condition to achieve faster imaging than was previously attainable with SEM, and charge neutrality unattainable with LEEM.

Abstract: The present invention resides in a Fourier filter to detect defects on semiconductor wafers. The present invention relates to a Fourier filter to detect defects on semiconductor wafers which is less susceptible to having the filter output affected by vibrations and which avoids the physical contact from conventional damping.

Abstract: An optical profilometer and a stylus probe measuring device used in the same instrument have the advantage that these two sensors can be quickly switched between each other. This can be an advantage when used to measure samples, since the optical profilometer can be used until a sample is found to be outside of the desired tolerances. Afterwards, the stylus probe measuring device can be used to accurately determine the profile data. This is an advantage because an optical profilometer is relatively quick, and the stylus probe measuring device is relatively accurate. Additionally, since the optical profilometer and stylus probe device are in the same instrument, the X and Y positions of these devices can be interrelated accurately. This allows images to be produced where the positions on the images can be easily correlated. For example, measurement cursors in sensor data displays can correlated by the positional offset information.

Abstract: A dual stage scanning instrument includes a sensor for sensing a parameter of a sample and coarse and fine stages for causing relative motion between the sensor and the sample. The coarse stage has a resolution of about 1 micrometer and the fine stage has a resolution of 1 nanometer or better. The sensor is used to sense the parameter when both stages cause relative motion between the sensor assembly and the sample, The sensor may be used to sense height variations of the sample surface as well as thermal variations electrostatic, magnetic, light reflectivity or light transmission parameters at the same time when height variation is sensed. By performing along scan at a coarser resolution and short scans a high resolution using the same probe tip or two probe tips at fixed relative positions, data obtained from the long and short scans can be correlated accurately.

Abstract: Achromatic optics may be employed in spectroscopic measurement systems. The achromatic optics comprises a spherical mirror receiving a beam of radiation in a direction away from its axis and a pair of lenses: a positive lens and a negative meniscus lens. The negative meniscus lens corrects for the spherical aberration caused by off-axis reflection from the spherical mirror. The positive lens compensates for the achromatic aberration introduced by the negative lens so that the optics, as a whole, is achromatic over visible and ultraviolet wavelengths. Preferably, the two lenses combined have zero power or close to zero power. By employing a spherical mirror, it is unnecessary to employ ellipsoidal or paraboloidal mirrors with artifacts of diamond turning which limit the size of the spot of the sample that can be measured in ellipsometry, reflectometry or scatterometry.

Abstract: An automated inspection system and method replaces human visual inspection of the surface of a specimen having distinguishing features or anomalies that are detectable under either one or a combination of bright field and dark field illumination. A preferred embodiment is an after develop inspection macro (ADI Macro) defect inspection system that inspects the patterned surface of a semiconductor wafer for large scale (i.e., greater than about 25 micron minimum dimension range) defects. The ADI Macro inspection system detects defects that appear after the photolithography development step and include regions of defocus ("hot spots"), scratches, pattern blemishes, large particles, (i.e., particles greater than about 25 micron minimum dimension range), extra deposited photoresist, nonuniform photoresist deposition, and edge bead removal inconsistencies.

Abstract: A laser imaging system having contemporaneous laser/white light viewing such that substantially only the wavelength of the spectral line of the laser light of the confocal portion of the laser imaging system is blocked by a holographic notch filter positioned in front of the white light image capture device (e.g., a video or CCD camera) to provide a white light image characterized by the natural white light image having been preserved and whereby substantially all of the reflected white light spectrum is transmitted by the holographic notch filter. In a second aspect of the invention, a novel bright field cube includes a beam splitter dimensioned to effectively eliminate the contrast bands typical of laser confocal images of the prior art resulting from interference fringes in the beam splitter to provide enhanced image detail of specimen structures.

Abstract: A method and system for spectroscopic ellipsometry employing reflective optics to measure a small region of a sample by reflecting radiation (preferably broadband UV, visible, and near infrared radiation) from the region. The system preferably has an autofocus assembly and a processor programmed to determine from the measurements the thickness and/or complex refractive index of a thin film on the sample. Preferably, only reflective optics are employed along the optical path between the polarizer and analyzer, a sample beam reflects with low incidence angle from each component of the reflective optics, the beam is reflectively focused to a small, compact spot on the sample at a range of high incidence angles, and an incidence angle selection element is provided for selecting for measurement only radiation reflected from the sample at a single, selected angle (or narrow range of angles). The focusing mirror preferably has an elliptical shape to reduce off-axis aberrations in the focused beam.

Abstract: A high sensitivity and high throughput surface inspection system directs a focused beam of light at a grazing angle towards the surface to be inspected. Relative motion is caused between the beam and the surface so that the beam scans a scan path covering substantially the entire surface and light scattered along the path is collected for detecting anamolies. The scan path comprises a plurality of arrays of straight scan path segments. The focused beam of light illuminates an area of the surface between 5-15 microns in width and this system is capable of inspecting in excess of about 40 wafers per hour for 150 millimeter diameter wafers (6-inch wafers), in excess of about 20 wafers per hour for 200 millimeter diameter wafers (8-inch wafers) and in excess of about 10 wafers per hour for 300 millimeter diameter wafers (12-inch wafers).

Abstract: A system and method for controlling electron exposure on image specimens by adjusting a raster scan area in-between scan frame cycles. A small, zoomed-in, scan area and the surrounding area are flooded with positive charge for a number of frame cycles between scan frames to reduce the voltage differential between the scan area and surrounding area, thereby reducing the positive charge buildup which tends to obscure small features in scanned images. The peak current into a pixel element on the specimen is reduced by scanning the beam with a line period that is very short compared to regular video. Frames of image data may further be acquired non-sequentially, in arbitrarily programmable patterns. Alternatively, an inert gas can be injected into the scanning electron microscope at the point where the electron beam impinges the specimen to neutralize a charge build-up on the specimen by the ionization of the inert gas by the electron beam.

Abstract: A probe tip of a scanning probe microscope or a profilometer is scanned across a surface in a contact, non-contact, or intermittent contact mode to sense the presence of a feature to be located. The probe tip may be scanned along substantially parallel paths, spiral paths or in a sequence of random positions to locate the feature. After the feature has been located, a different searching sequence is employed in order to locate a center of the feature if such is desired. Then, the probe tip is scanned across the surface over the center of the feature in order to perform a measurement of the feature. For some particular features such as tungsten plugs, metal clusters or metal filled via holes of a surface, an electrical or magnetic parameter of the feature may be used for locating the feature after which the same or a different characteristic of the feature, such as geometric profile, can be measured.

Abstract: A high throughput surface inspection system with enhanced detection sensitivity is described. The acquired data is processed in real time at a rate of below 50 MHz thereby reducing the cost for data processing. Anomalies are detected and verified by comparing adjacent repeating patterns and the height of the surface is monitored and corrected dynamically to reduce misregistration errors between adjacent repeating patterns. Local thresholds employing neighborhood information are used for detecting and verifying the presence of anomalies. The sampled point spread function of the combined illumination and collection system is exploited for anomaly detection and verification.

Abstract: Because of diffraction effects caused by slits or apertures in optical measurement systems, the radiation energy which is directed towards a particular region on a sample will be spread over a larger area than desirable. By employing an apodizing filter in the radiation path in such system, diffraction tails of the system will be reduced. The apodizing filter preferably has a pattern of alternating high transmittance areas and substantially opaque areas where the locally averaged transmittance function is an apodizing function. In the preferred embodiment, the locally averaged transmittance function varies smoothly and monotonically from the periphery to the center of the filter.

Abstract: An acoustic sensor used with a first sensor (such as a profilometer, scanning probe microscope or the like) allows for the positioning of the first sensor with respect to the sample. The acoustic sensor has a greater range than a profilometer or a scanning probe microscope, and a relatively quick response time, which allows it to be an effective proximity detector. Additionally, the acoustic sensor is not affected by the material of the sample's surface layer.

Abstract: An optical surface inspection system is designed to correct for misregistration errors. A reference vector of data samples is obtained by computing an average of adjacent data sample vectors. A comparison of the data samples in a current vector being processed to data samples that may be offset from such current vector along the direction of the current vector enables the detection and correction of misregistration errors. Alternatively, a target array of data samples is compared to a reference array of data samples collected from a different portion of the surface with various offsets for detection and correction of misregistration errors. The intensity of the reflection from the inspection beam may be monitored to vary the intensity of the inspection beam so as to reduce the dynamic range of background scattering.

Abstract: A single laser is used to provide light for both dark and bright field detection. The laser beam is split into two beams by a Wollaston prism and both beams are directed towards a sample to be inspected to illuminate two areas of the sample. The light reflected by or transmitted through the sample at the two spots is then combined by the same or a different Wollaston prism and the phase shift caused by any anomaly of a sample is detected as a phase shift between the two beams by a bright field detector. Light scattered by the sample at the two spots is detected by a dark field detector. A halfwave plate is used to orient the polarization plane of light from the laser incident on the Wollaston prism so that one of the two beams incident on the sample has a much higher intensity than the other and so that the sensitivity and the detection operation of dark field is not altered by the presence of two illuminated spots on the sample.

Abstract: The pixel position-to-wavelength calibration function of film measurement devices such as spectroscopic ellipsometers and spectroreflectometers may shift due to temperature and humidity changes and mechanical factors. One or more wavelength markers provided by the light source or reference sample may be used to correct the calibration function. The pixel positions of one or more persistent wavelength markers are noted during the calibration process and the current positions of such markers are again noted to account for shifts due to various factors to correct the calibration function.