Abstract: An optical filter for the selective attenuation of specific wavelengths of light includes at least one spectrally dispersive element, such as a diffraction grating or prism, in combination with an optical filter. A dispersive element separates broadband light into a constituent wavelength spread in angle space. An optical filter, or filter array, can block and/or attenuate specific wavelengths or wavelength ranges of interest while the light is angularly dispersed. A second dispersive element can recombine this filtered, separated wavelength fan of light into a coaxial broadband beam having a smoother intensity profile than the unfiltered beam.

Abstract: A system and method for measuring a phase difference between first and second reflected polarized light signal components, including transmitting a first incident light signal toward a first object, wherein the first object is a magnetic disk and/or a glass substrate. Seperating from a reflected light signal, a first mixed reflected polarized light signal component having a first phase and a second mixed reflected polarized light signal component having a second phase that is different from said first phase, wherein said mixed reflected polarized light signal components comprises both P-polarized and S-polarized light relative to a plane of incidence of said reflected light signal. Detecting the intensities of said first and second mixed reflected polarized light signal components, and determining a difference in phase between said first and second mixed reflected polarized light signal component based upon said first and second intensities.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a characteristic of a layer formed on a specimen by a deposition process. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Abstract: A combined optical profiler, ellipsometer, reflectometer and scatterometer is described which is configured to have user selectable spot sizes. An attached computer allows the user to select via software the desired spot size on the substrate.

Abstract: The invention is a method of determining the presence of an anomaly in qualifying a pattern, patterning process, or patterning apparatus used in the fabrication of microlithographic patterns. A preferred implementation of the method qualifies incoming reticles and process conditions on test wafers to maximize the available usable process window for a given reticle exposure tool combination. Practicing this method on test wafers enables the identification of spatial areas where a process will fail first and candidate regions for carrying out defect inspection and metrology. Other preferred implementations of the method qualify masks, reticles, or other patterns characterized by data bases on which are stored image data acquired by practice of aerial image measurement system (AIMS) or design rule checking (DRC) techniques.

Abstract: An apparatus configured to control a magnetic field strength of a magnetic lens is provided. The apparatus may include a magnetic sensor configured to generate an output signal responsive to a first magnetic field strength of the magnetic lens. The apparatus may also include a control circuit coupled to the magnetic sensor and the magnetic sensor. The control circuit may be configured to receive the output signal from the magnetic lens and to receive an input signal responsive to a predetermined magnetic field strength. The control circuit may be further configured to generate a control signal responsive to the output signal and the input signal. Additionally, the control circuit may be configured to apply a current to the magnetic lens such that a second magnetic field strength may be generated within the magnetic lens closer to the predetermined magnetic field strength than the first magnetic strength.

Abstract: The thickness of a wafer, substrate, or magnetic disk is measured by a shadow technique. A light source is positioned to pass a portion of light beam intensity on both sides of the wafer, substrate, or magnetic disk. A detector measures the light beam intensity after the light beam passes the wafer, substrate, or magnetic disk.

Abstract: An apparatus and method for detecting pattern defects and/or particles on the front surface of a semiconductor wafer having repetitive patterns includes a laser for illuminating an area on the front surface with a beam of polarized light. A lens collects light scattered from the area and forms a Fourier diffraction pattern of the area illuminated. A Fourier mask blocks out scattered light collected by the lens at locations in the Fourier diffraction pattern where the intensity is above a predetermined level indicative of background information and leaves in light at locations where the intensity is below the threshold level indicative of possible particle information. The Fourier mask includes a spatial light modulator and a polarization discriminator. The lens also images the area illuminated onto a camera using scattered light collected from the area by the lens and not blocked out by the Fourier mask.

Abstract: Windows configurable to be coupled to a process tool or to be disposed within an opening in a polishing pad are provided. One window includes a first portion and a second portion. The first portion includes a first material, and the second portion includes a second material different than the first. Another window includes a substantially transparent gel. In some instances, the gel includes a triblock copolymer and a plasticizing oil. An additional window includes an upper window, a housing, and a diaphragm. The housing may allow a fluid to flow into and out of a space between the housing and the diaphragm. In another embodiment, a window includes a layer of material coupled to lateral surfaces of the window. In some cases, the window may be disposed within an opening in a polishing pad, and movement of the window within the polishing pad may compress the layer of material.

Abstract: Systems and methods for scanning a beam of light over a specimen are provided. A system may include a pre-scan acousto-optical deflector (AOD) configured to deflect a beam of light, a second AOD configured as a traveling lens to focus the scanning beam, a relay lens, and an objective lens. The relay lens may be centered on the scan line produced by the second AOD, while the objective lens may be substantially de-centered with respect to the relay lens to produce a telecentric scanning spot with no field tilt. The system may modulate the amplitude of the sound wave in the first AOD to compensate for attenuation in the second AOD. The system may pre-fill one chirp packet in the second AOD while another chirp packet is scanning to substantially reduce a delay between consecutive scans.

Abstract: A technique for measuring the chemical composition of surface particles or other small features which may be present on semiconductor wafers or other substrates. A particle is irradiated with a variable energy, focused incident electron beam. X-ray or electron emissions from the particle are monitored to detect an increase in output indicating the ionization threshold of the materials in the particle. The incident beam energy is correlated with the thresholds detected to determine the species present in the particle.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a presence of macro defects and overlay of a specimen. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Abstract: A calibration standard which may be used to calibrate lateral dimensional measurement systems is provided. The calibration standard may include a first substrate spaced from a second substrate. In addition, the calibration standard may include at least one layer disposed between the first and second substrates. The layer may have a traceably measured thickness. For example, a thickness of the layer may be traceably measured using any measurement technique in which a measurement system may be calibrated with a standard reference material traceable to a national testing authority. The calibration standard may be cross-sectioned in a direction substantially perpendicular to an upper surface of the first substrate. The cross-sectioned portion of the calibration standard may form a viewing surface of the calibration standard. In this manner, a lateral dimensional artifact of the calibration standard may include the traceably measured thickness of at least the one layer.