Abstract: An inspection system for detecting anomalies on a substrate. A first network is coupled to a sensor array and communicates data. Process nodes are coupled to the first network, and process the data to produce reports. Each process node includes memory sufficient to buffer the data until it can process the data. Each process node has an interface card that formats the data for a high speed interface bus that is coupled to the interface card. A computer receives and processes the data to produce the report. A second network receives the reports. A job manager is coupled to the second network, receives the reports, and sends information to the process nodes to coordinate processing of the data.

Abstract: A method of inspecting a phase shift mask is disclosed. The method includes receiving a mask having an alternating phase shift pattern. The method also includes forming the alternating phase shift pattern on a wafer. The method further includes analyzing the alternating phase shift pattern on the wafer to determine the phase difference of the alternating phase shift pattern.

Abstract: A system and method for measuring defects, film thickness, contamination, particles and height of a thin film disk or a silicon wafer.

Abstract: An x-ray metrology system includes one or more transmissive x-ray optical elements, such as zone plates or compound refractive x-ray lenses, to shape the x-ray beams used in the measurement operations. Each transmissive x-ray optical element can focus or collimate a source x-ray beam onto a test sample. Another transmissive x-ray optical element can be used to focus reflected or scattered x-rays onto a detector to enhance the resolving capabilities of the system. The compact geometry of transmissive x-ray optical element allows for more flexible placement and positioning than would be feasible with conventional curved crystal reflectors. For example, multiple x-ray beams can be focused onto a test sample using a transmissive x-ray optical element array. Robust zone plates can be efficiently produced using a damascene process.

Abstract: Techniques for efficiently setting up inspection, metrology, and review systems for operating upon semiconductor wafers are described. Specifically, this involves setting up recipes that allows each system to accurately inspect semiconductor wafers. The invention gathers pertinent information from these tools and presents the information to users in a way that greatly reduces the time required to complete a recipe. One system embodiment includes an inspection system and a review station that is communicatively linked such that the review station can read from and write to an entire set of data stored at the inspection system. The set of data includes image files of features detected by the inspection system.

Abstract: An improved voltage contrast test structure is disclosed. In general terms, the test structure can be fabricated in a single photolithography step or with a single reticle or mask. The test structure includes substructures which are designed to have a particular voltage potential pattern during a voltage contrast inspection. For example, when an electron beam is scanned across the test structure, an expected pattern of intensities are produced and imaged as a result of the expected voltage potentials of the test structure. However, when there is an unexpected pattern of voltage potentials present during the voltage contrast inspection, this indicates that a defect is present within the test structure.

Abstract: A curved mirrored surface is used to collect radiation scattered by a sample surface and originating from a normal illumination beam and an oblique illumination beam. The collected radiation is focused to a detector. Scattered radiation originating from the normal and oblique illumination beams may be distinguished by employing radiation at two different wavelengths, by intentionally introducing an offset between the spots illuminated by the two beams or by switching the normal and oblique illumination beams on and off alternately. Beam position error caused by change in sample height may be corrected by detecting specular reflection of an oblique illumination beam and changing the direction of illumination in response thereto. Butterfly-shaped spatial filters may be used in conjunction with curved mirror radiation collectors to restrict detection to certain azimuthal angles.

Abstract: In one embodiment, the present invention provides an interferometric inspection system for inspecting semiconductor samples. The system includes at least one illumination source for generating an illumination beam and an interferometric microscope module for splitting the illumination beam into a test beam directed to the semiconductor sample and a reference beam directed to a tilted reference mirror. The beams are combined to generate an interference image at an image sensor. The tilted reference mirror is tilted at a non-normal angle with respect to the reference beam that is incident on the mirror to thereby generate fringes in the interference image. The system also includes an image sensor for acquiring the interference image from the interferometric microscope module and generates an inherence signal.

Abstract: A double-sided optical inspection system is presented which may detect and classify particles, pits and scratches on thin film disks or wafers in a single scan of the surface. In one embodiment, the invention uses a pair of orthogonally oriented laser beams, one in the radial and one in the circumferential direction on both surfaces of the wafer or thin film disk. The scattered light from radial and circumferential beams is separated via their polarization or by the use of a dichroic mirror together with two different laser wavelengths.

Abstract: A darkfield surface inspection tool of the invention includes an illumination source for illuminating a workpiece and generating a light scattering pattern. The light scattering pattern being configured such that the positions of the light beams of the scattering pattern are uniquely related to the scattering angles of the light beams as they are scattered from the workpiece. The tool also includes a photodetector array positioned at a detector surface to detect the light scattering pattern as it reaches the detector surface. The photodetector array produces an electrical signal that is received by signal processing electronics of the tool and can be used to characterize defects on the workpiece. The invention also includes darkfield surface inspection methods.

Abstract: A method of reducing atom ejection from a sample during electron beam bombardment. An electron beam is directed through a low pressure environment toward a surface of the sample. The electron beam thereby impinges on the sample at a target location, and thereby causes characteristic x-ray emission from the target location of the sample. A capping precursor is introduced into the low pressure environment, where the capping precursor forms a capping layer on the surface of the sample at the target location when contacted by the electron beam. The capping layer thereby reduces atom ejection from the sample at the target location, while not appreciably impeding and confounding the characteristic x-ray emission from the target location of the sample.

Abstract: A film stack adapted to enable optical readings on a film stack. Multiple gratings layers are disposed within transparent layers, and include a topmost grating layer, a bottommost grating layer, and at least one intervening grating layer. Each one of the grating layers have a pitch between substantially opaque portions of the grating layer and substantially transparent portions of the grating layer. The substantially opaque portions of the bottommost grating layer are laterally disposed at an offset from the substantially opaque portions of the topmost grating layer. The substantially opaque portions of the at least one intervening grating layer are laterally disposed between the opaque portions of the bottommost grating layer and the substantially opaque portions of the topmost grating layer.

Abstract: A process for measuring both the reflectance and sheet resistance of a thin film, such as a metal film or a doped semiconductor, in a common apparatus comprises: directing a beam of radiation from a radiation source on the common apparatus onto a portion of the surface of the thin film, sensing the amount of radiation reflected from the surface of the thin film, and contacting the surface of the thin film with a sheet resistance measurement apparatus on the apparatus at a portion of the surface of the thin film coincident with or adjacent to the portion of the thin film contacted by the radiation beam to measure the sheet resistance of the thin film. The sheet resistance measurement apparatus may, by way of example, comprise a 4 point probe or an eddy current measurement apparatus. The respective measurements may be carried out either simultaneously or sequentially.

Abstract: A semiconductor measurement recipe architecture organized to include reusable sub-recipes, each defining at least one parameter associated with either a semiconductor wafer and/or a semiconductor disposed thereon, is disclosed. This recipe architecture will include a set of parameter dependencies, one or more which having a respective relationship with of the sub-recipes to permit safe and reliable sub-recipe reuse. Also disclosed is a recipe generation method including: determining an appropriate baseline existing recipe that's organized to include a set of parameter dependencies and dependency related sub-recipes; perceiving a dependency change; determining which, if any, of the sub-recipes of the existing recipe remain unaffected after the dependency change(s); and generating a new recipe using at least one of the sub-recipes found to be unaffected.

Abstract: The present invention discloses methods of conducting surface inspections using summed light. One method includes the steps of measuring summed light intensity values for the substrate, generating comparison values for the substrate, and then comparing the measured summed light intensity values with the comparison values to determine whether there are defects in the substrate. In another embodiment, a method includes the steps of generating a reference cluster using measured summed light intensity values for selected portions of the inspection surface. Other summed light intensity values are measured and then compared with the reference cluster. Using this comparison, a determination is made as to whether a defect is present. Another embodiment uses a constant baseline signal which is compared to actual light intensity values to determine whether a substrate defect is present.

Abstract: A method of measuring a lower similar layer that is separated from an upper similar layer by an intervening dissimilar layer in an integrated circuit. A first electron beam having a first relatively lower landing energy is directed at the integrated circuit. The first relatively lower landing energy is sufficient to completely penetrate the upper similar layer and insufficient to completely penetrate the intervening dissimilar layer, thereby producing first readings that are characteristic of the upper similar layer. A second electron beam having a second relatively higher landing energy is directed at the integrated circuit, the second relatively higher landing energy is sufficient to completely penetrate the upper similar layer, the intervening dissimilar layer, and the lower similar layer, thereby producing second readings that are characteristic of both the upper similar layer and the lower similar layer.

Abstract: A method and apparatus for inspecting patterned substrates, such as photomasks, for unwanted particles and features occurring on the transmissive as well as pattern defects. A transmissive substrate is illuminated by a laser through an optical system comprised of a laser scanning system, individual transmitted and reflected light collection optics and detectors collect and generate signals representative of the light transmitted and reflected by the substrate. The defect identification of the substrate is performed using transmitted and reflected light signals from a baseline comparison between two specimens, or one specimen and a database representation, to form a calibration pixelated training set including a non-defective region. This calibration pixilated training set is compared to a transmitted-reflected plot map of the subject specimen to assess surface quality.

Abstract: One embodiment disclosed relates to a method for automated focusing of an electron image. An EF cut-off voltage is determined. In compensation for a change in the EF cut-off voltage, a focusing condition is adjusted. Adjusting the focusing condition may comprise, for example, adjusting a wafer bias voltage in correspondence to the change in cut-off voltage. Another embodiment disclosed relates to a method for automated focusing of an electron image in a scanning electron imaging apparatus. A focusing condition of a primary electron beam in a first image plane is varied so as to maximize an intensity of a secondary electron beam through an aperture in a second image plane.

Abstract: A thin film analysis system includes multi-technique analysis capability. Grazing incidence x-ray reflectometry (GXR) can be combined with x-ray fluorescence (XRF) using wavelength-dispersive x-ray spectrometry (WDX) detectors to obtain accurate thickness measurements with GXR and high-resolution composition measurements with XRF using WDX detectors. A single x-ray beam can simultaneously provide the reflected x-rays for GXR and excite the thin film to generate characteristic x-rays for XRF. XRF can be combined with electron microprobe analysis (EMP), enabling XRF for thicker films while allowing the use of the faster EMP for thinner films. The same x-ray detector(s) can be used for both XRF and EMP to minimize component count. EMP can be combined with GXR to obtain rapid composition analysis and accurate thickness measurements, with the two techniques performed simultaneously to maximize throughput.

Abstract: Disclosed are methods and apparatus for analyzing the Raze data provided by an optical inspection tool. The Haze data is analyzed so as to detect defects associated with the specimen surface. In general, the Haze data is first conditioned so that background noise which corresponds to low frequency variation on the specimen is separated or removed from the Haze data prior to analysis of such Haze data. In a specific embodiment, low frequency variations in the specimen surface are characterized, in effect, as an optical surface upon which an incident beam is directed. The Haze data that conforms to this resulting polynomial equation is then subtracted from the original Haze data to result in residual data, where slow variations in surface roughness are subtracted out, leaving possible defect information in the residual Haze data. This residual Haze data may then be analyzed to determine whether the specimen contains a defect.