Abstract: A method may include, but is not limited to, receiving a measurement including a metrology parameter for a layer of a metrology target and an alignment mark from an overlay metrology tool prior to a lithography process; deriving a merit figure from the metrology parameter and the alignment mark; deriving a correction factor from the merit figure; providing the correction factor to the lithography process via a feed forward process; receiving an additional measurement including an additional metrology parameter for the layer and an additional layer from an additional overlay metrology tool after the lithography process; deriving an adjustment from the additional metrology parameter; and providing the adjustment to the lithography process via a feedback process.

Abstract: Methods and systems for estimating values of process parameters, structural parameters, or both, based on x-ray scatterometry measurements of high aspect ratio semiconductor structures are presented herein. X-ray scatterometry measurements are performed at one or more steps of a fabrication process flow. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of an on-going semiconductor fabrication process flow. Process corrections are determined based on the measured values of parameters of interest and the corrections are communicated to the process tool to change one or more process control parameters of the process tool. In some examples, measurements are performed while the wafer is being processed to control the on-going fabrication process step. In some examples, X-ray scatterometry measurements are performed after a particular process step and process control parameters are updated for processing of future devices.

Abstract: Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

Abstract: Methods and systems for performing active learning for defect classifiers are provided. One system includes one or more computer subsystems configured for performing active learning for training a defect classifier. The active learning includes applying an acquisition function to data points for the specimen. The acquisition function selects one or more of the data points based on uncertainty estimations associated with the data points. The active learning also includes acquiring labels for the selected one or more data points and generating a set of labeled data that includes the selected one or more data points and the acquired labels. The computer subsystem(s) are also configured for training the defect classifier using the set of labeled data. The defect classifier is configured for classifying defects detected on the specimen using the images generated by the imaging subsystem.

Abstract: An emitter with a diameter of 100 nm or less is used with a protective cap layer and a diffusion barrier between the emitter and the protective cap layer. The protective cap layer is disposed on the exterior surface of the emitter. The protective cap layer includes molybdenum or iridium. The emitter can generate an electron beam. The emitter can be pulsed.

Abstract: A system for pumping laser sustained plasma and enhancing one or more selected wavelengths of output illumination generated by the laser sustained plasma is disclosed. In embodiments, the system includes one or more pump modules configured to generate pump illumination for the laser sustained plasma and one or more enhancing illumination sources configured to generate enhancing illumination at one or more selected wavelengths. The pump illumination may be directed along one or more pump illumination paths that are non-collinear to an output illumination path of the output illumination. The enhancing illumination may be directed along an illumination path that is collinear to the output illumination path of the output illumination so that the enhancing illumination is combined with the output illumination, thereby enhancing the output illumination at the one or more selected wavelengths.

Abstract: An imaging system utilizing atomic atoms is provided. The system may include a neutral atom source configured to generate a beam of neutral atoms. The system may also include an ionizer configured to collect neutral atoms scattered from the surface of a sample. The ionizer may also be configured to ionize the collected neutral atoms. The system may also include a selector configured to receive ions from the ionizer and selectively filter received ions. The system may also include one or more optical elements configured to direct selected ions to a detector. The detector may be configured to generate one or more images of the surface of the sample based on the received ions.

Abstract: A photocathode structure, which can include one or more of Cs2Te, CsKTe, CsI, CsBr, GaAs, GaN, InSb, CsKSb, or a metal, has a protective film on an exterior surface. The protective film includes one or more of ruthenium, nickel, platinum, chromium, copper, gold, silver, aluminum, or an alloy thereof. The protective film can have a thickness from 1 nm to 10 nm. The photocathode structure can be used in an electron beam tool like a scanning electron microscope.

Abstract: Methods and systems for evaluating the geometric characteristics of patterned structures are presented. More specifically, geometric structures generated by one or multiple patterning processes are measured by two or more metrology systems in accordance with a hybrid metrology methodology. A measurement result from one metrology system is communicated to at least one other metrology systems to increase the measurement performance of the receiving system. Similarly, a measurement result from the receiving metrology system is communicated back to the sending metrology system to increase the measurement performance of the sending system. In this manner, measurement results obtained from each metrology system are improved based on measurement results received from other cooperating metrology systems. In some examples, metrology capability is expanded to measure parameters of interest that were previously unmeasurable by each metrology system operating independently.

Abstract: Various embodiments for detecting defects on a wafer are provided. One method includes acquiring output generated by an inspection system for a wafer during an inspection process that is performed after at least first and second process steps have been performed on the wafer. The first and second process steps include forming first and second portions, respectively, of a design on the wafer. The first and second portions of the design are mutually exclusive in space on the wafer. The method also includes detecting defects on the wafer based on the output and determining positions of the defects with respect to the first and second portions of the design. In addition, the method includes associating different portions of the defects with the first or second process step based on the positions of the defects with respect to the first and second portions of the design.

Abstract: Methods and systems for training a learning based defect classifier are provided. One method includes training a learning based defect classifier with a training set of defects that includes identified defects of interest (DOIs) and identified nuisances. The DOIs and nuisances in the training set include DOIs and nuisances identified on at least one training wafer and at least one inspection wafer. The at least one training wafer is known to have an abnormally high defectivity and the at least one inspection wafer is expected to have normal defectivity.

Abstract: Methods and systems for shape metric based scoring of wafer locations are provided. One method includes selecting shape based grouping (SBG) rules for at least two locations on a wafer. For one of the wafer locations, the selecting step includes modifying distances between geometric primitives in a design for the wafer with metrology data for the one location and determining metrical complexity (MC) scores for SBG rules associated with the geometric primitives in a field of view centered on the one location based on the distances. The selecting step also includes selecting one of the SBG rules for the one location based on the MC scores. The method also includes sorting the at least two locations on the wafer based on the SBG rule selected for the at least two locations.

Abstract: Adaptive alignment methods and systems are disclosed. An adaptive alignment system may include a scanner configured to align a wafer and an analyzer in communication with the scanner. The analyzer may be configured to: recognize at least one defined analysis area; determine whether any perturbations exist within the analysis area; and in response to at least one perturbation determined to be within the analysis area, invoke a fall back alignment strategy or report the at least one perturbation to the scanner.

Abstract: Metrology target design methods and verification targets are provided. Methods include using OCD data related to designed metrology target(s) as an estimation of a discrepancy between a target model and a corresponding actual target on a wafer, and adjusting a metrology target design model to compensate for the estimated discrepancy. The dedicated verification targets may include overlay target features and be size optimized to be measurable by an OCD sensor, to enable compensation for inaccuracies resulting from production process variation. Methods also include modifications to workflows between manufacturers and metrology vendors which provide enabled higher fidelity metrology target design models and ultimately higher accuracy of metrology measurements.

Abstract: A method includes receiving one or more sets of wafer data, identifying one or more primitives from one or more shapes in one or more layers in the one or more sets of wafer data, classifying each of the one or more primitives as a particular primitive type, identifying one or more primitive characteristics for each of the one or more primitives, generating a primitive database of the one or more primitives, generating one or more rules based on the primitive database, receiving one or more sets of design data, applying the one or more rules to the one or more sets of design data to identify one or more critical areas, and generating one or more wafer inspection recipes including the one or more critical areas for an inspection sub-system.

Abstract: Methods of designing metrology targets are provided, which comprise distinguishing target elements from their background area by segmenting the background area and optionally segmenting the target elements. The provided metrology targets may maintain a required feature size when measured yet be finely segmented to achieve process and design rules compatibility which results in higher accuracy of the metrology measurements. Particularly, all transitions between target features and adjacent background features may be designed to maintain a feature size of the features below a certain threshold.

Abstract: Alignment can be monitored by positioning at least one alignment verification location per alignment frame. The alignment verification location is a coordinate within the alignment frame. A distance between each of the alignment verification locations and a closest instance of an alignment target is determined. An alignment score can be determined based on the distance. The alignment score can include a number of the alignment frames between the alignment verification location and the alignment target. If the alignment score is below a threshold, then alignment setup can be performed.

Abstract: Methods applicable in metrology modules and tools are provided, which enable adjusting metrology measurement parameters with respect to process variation, without re-initiating metrology recipe setup. Methods comprise, during an initial metrology recipe setup, recording a metrology process window and deriving baseline information therefrom, and during operation, quantifying the process variation with respect to the baseline information, and adjusting the metrology measurement parameters within the metrology process window with respect to the quantified process variation. The quick adjustment of metrology parameters avoids metrology-related process delays and releases prior art bottlenecks related thereto. Models of effects of various process variation factors on the metrology measurements may be used to enhance the derivation of required metrology tuning and enable their application with minimal delays to the production process.

Abstract: Methods and systems fir identifying nuisances and defects of interest (DOIs) in defects detected on a wafer are provided. One method includes acquiring metrology data for the wafer generated by a metrology tool that performs measurements on the wafer at an array of measurement points. In one embodiment, the measurement points are determined prior to detecting the defects on the wafer and independently of the defects detected on the wafer. The method also includes determining locations of defects detected on the wafer with respect to locations of the measurement points on the wafer and assigning metrology data to the defects as a defect attribute based on the locations of the defects determined with respect to the locations of the measurement points. In addition, the method includes determining if the defects are nuisances or DOIs based on the defect attributes assigned to the defects.

Abstract: Disclosed are apparatus and methods for inspecting a semiconductor sample. Locations corresponding to candidate defect events on a semiconductor sample are provided from an optical inspector operable to acquire optical images from which such candidate defect events are detected at their corresponding locations across the sample. High-resolution images are acquired from a high-resolution inspector of the candidate defect events at their corresponding locations on the sample. Each of a set of modelled optical images, which have been modeled from a set of the acquired high-resolution images, is correlated with corresponding ones of a set of the acquired optical images, to identify surface noise events, as shown in the set of high-resolution images, as sources for the corresponding candidate events in the set of acquired optical images. Otherwise, a subsurface event is identified as a likely source for a corresponding candidate defect event.