Abstract: Methods and systems for measuring metrology targets smaller than the illumination spot size employed to perform the measurement are described herein. Collected measurement signals contaminated with information from structures surrounding the target area are reconstructed to eliminate the contamination. In some examples, measurement signals associated one or more small targets and one or more large targets located in close proximity to one another are used to train a signal reconstruction model. The model is subsequently used to reconstruct measurement signals from other small targets. In some other examples, multiple measurements of a small target at different locations within the target are de-convolved to estimate target area intensity. Reconstructed measurement signals are determined by a convolution of the illumination spot profile and the target area intensity. In a further aspect, the reconstructed signals are used to estimate values of parameters of interest associated with the measured structures.

Abstract: Methods and systems of process control and yield management for semiconductor device manufacturing based on predictions of final device performance are presented herein. Estimated device performance metric values are calculated based on one or more device performance models that link parameter values capable of measurement during process to final device performance metrics. In some examples, an estimated value of a device performance metric is based on at least one structural characteristic and at least one band structure characteristic of an unfinished, multi-layer wafer. In some examples, a prediction of whether a device under process will fail a final device performance test is based on the difference between an estimated value of a final device performance metric and a specified value. In some examples, an adjustment in one or more subsequent process steps is determined based at least in part on the difference.

Abstract: One embodiment relates to an apparatus for detecting defects on a manufactured substrate. The apparatus includes an imaging tool arranged to obtain image frames from the manufactured substrate. The apparatus further includes a data processing system which includes computer-readable code configured to compute features for pixels in an image frame and divide the pixels in the image frame into feature-defined groups of pixels. The computer-readable code is further configured to select a feature-defined group, and generate a multi-dimensional feature distribution for the selected feature-defined group. Another embodiment relates to a method of detecting defects from a test images frame and multiple reference image frames. Other embodiments, aspects, and features are also disclosed.

Abstract: Light-emitting devices, such as LEDs, are tested using a photometric unit. The photometric unit, which may be an integrating sphere, can measure flux, color, or other properties of the devices. The photometric unit may have a single port or both an inlet and outlet. Light loss through the port, inlet, or outlet can be reduced or calibrated for. These testing systems can provide increased reliability, improved throughput, and/or improved measurement accuracy.

Abstract: A method to collect data and train, validate and deploy statistical models to predict overlay errors using patterned wafer geometry data and other relevant information includes selecting a training wafer set, measuring at multiple lithography steps and calculating geometry differences, applying a plurality of predictive models to the training wafer geometry differences and comparing predicted overlay to the measured overlay on the training wafer set. The most accurate predictive model is identified and the results fed-forward to the lithography scanner tool which can correct for these effects and reduce overlay errors during the wafer scan-and-expose processes.

Abstract: A method for selecting a process for a new integrated circuit design. Structures that are used in existing integrated circuit designs are identified, as well as the photolithography processes that are used to fabricate integrated circuits that are based on the existing designs. A process window is determined for each structure/process combination by running tests on different combinations of process variables, and a database of the process windows is compiled. The structures that are to be used in the new integrated circuit design are identified, and the process windows associated with the identified structures for the new integrated circuit design are selected from the database. The selected process windows for the identified structures are overlaid, grouped by common process, thereby creating a resultant process window for each process. One of the processes is selected, based at least in part on comparative sizes of the resultant process windows.

Abstract: A method of characterizing a process by selecting the process to characterize, selecting a parameter of the process to characterize, determining values of the parameter to use in a test matrix, specifying an eccentricity for the test matrix, selecting test structures to be created in cells on a substrate, processing the substrate through the process using in each cell the value of the parameter as determined by the eccentric test matrix, measuring a property of the test structures in the cells, and developing a correlation between the parameter and the property.

Abstract: Disclosed are methods and apparatus for designing an optical spectrum of an illumination light beam within an optical inspection system. A set of conditions for inspecting a film on a sample by directing an illumination light beam at the sample is determined. At least a portion of the illumination light beam is reflected off the sample and used to generate an image of at least a portion of the film on the sample. A plurality of peak wavelength values are determined for the optical spectrum of the illumination light beam so as to control color variation in the image of the film portion. The determination of the peak wavelengths is based on the determined set of conditions and a selected thickness range of the film. In one specific embodiment, the color variation is reduced, while in another embodiment the color variation is increased to enhance pattern contrast. An apparatus which implements the designed optical spectrum is also disclosed.