Abstract: A chip resistor 1, which is excellent in the surge characteristics and also suitable for miniaturization, is formed by printing into a crank shape, and a first area S1 surrounded by a parallelogram is a portion where a large amount of current flows while two second areas S2a, S2b located outside the first area S1 are portions with small current distributions. A trimming groove 12 for adjustment of a resistance value is formed into an L-cut shape as a whole such that it has a coarse adjustment portion 12a formed to pass through the second area S2a and extend into the first area S1 and a fine adjustment portion 12b formed to pass through the first area S1 from the distal end of the coarse adjustment portion 12a and extend to a position reaching the second area S2a again.

Abstract: The present invention relates to an all-solid-state ion-selective electrode having an insertion material, and a method of manufacturing such an all-solid-state ion-selective electrode. The all-solid-state potassium ion-selective electrode (1) includes: a conductor (2); an insertion material (10) formed on a surface of the conductor (2); and a potassium ion-sensitive membrane (20) covering the insertion material (10). The insertion material (10) includes at least a Prussian blue analog represented by a structural formula KxFe[Fe(CN)6]y·nH2O, where x is a numerical number larger than 0 and less than or equal to 2, y is a numerical number larger than 0 and less than or equal to 1, and n is a numerical number larger than or equal to 0.

Abstract: A chip resistor includes an insulating substrate, a pair of front electrodes provided on the insulating substrate, a resistor provided to connect between the pair of front electrodes, a glass body provided on the resistor, a trimming groove formed in the resistor through the glass body, a first protective film formed to cover the trimming groove, a second protective film formed to cover the first protective film, a pair of end face electrodes formed to be connected to the front electrodes, and a pair of external plating layers formed to cover the end face electrodes, respectively, wherein the first protective film is made of a resin material containing a heat dissipating filler, and the second protective film is made of a resin material.

Abstract: A sensor device according to the present invention includes: a sensor element including a temperature-sensitive resistor; and a protective cover that protects the sensor element, wherein the sensor element has a shape extending long along one direction, and the protective cover surrounds a periphery of the sensor element with a plurality of support pillars extending obliquely with respect to a longitudinal direction of the sensor element. It is preferable that the plurality of support pillars intersect in a lattice-like manner.

Abstract: An object is to provide a flow sensor element is non-directional and has an excellent sensor sensitivity. A flow sensor element includes a base body having a spherical shape, and a temperature-sensitive film pattern that is disposed over the entirety of a surface of the base body, and changes in an electrical resistance value due to a change in temperature. It is preferable that the temperature-sensitive film pattern be formed by trimming a temperature-sensitive film that has been formed on the surface of the base body. In the flow sensor element, the temperature-sensitive film pattern can be disposed over the entirety of the surface of the base body having a spherical shape. This enables a constant sensor sensitivity to be obtained regardless of a direction of a fluid, and the accuracy of detection of a flow rate can be improved.

Abstract: A shunt resistor (1) includes: a resistance element (3); a first electrode (5A) and a second electrode (5B) coupled to both sides of the resistance element (3); a first fusion material (6A) and a second fusion material (6B) electrically coupled to the first electrode (5A) and the second electrode (5B), respectively, the first fusion material (5A) and the second fusion material (5B) haying electric conductivity; and at least one board (10) coupled to the first electrode (5A) and the second electrode 15B) by the first fusion material (6A) and the second fusion material (6B). The first fusion material (6A) is arranged in a first through-hole (7A) formed in the first electrode (5A) or the board (10), and the second fusion material (6B) is arranged it as second through-hole (7B) formed in the second electrode (5B) or the board (10).

Abstract: The present invention relates to a shunt resistor for current detection. The shunt resistor (1) includes: a resistance element (5) having a plate shape; and electrodes (6, 7) connected to both end surfaces (5a, 5b) of the resistance element (5), wherein the electrodes (6, 7) have cut portions (11, 12), respectively, the cut portions (11, 12) extending parallel to joint portions (8, 9) of the resistance element (5) and the electrodes (6, 7), and each of the cut portions (11, 12) is located at a position where a relationship Y?0.80X-1.36 holds, where Y is a distance from each joint portion (6, 7) to each cut portion (11, 12), and X is a length of the joint portions (6, 7) in a width direction of the electrodes (6, 7).

Abstract: A resistor is provided with a resistance body and a pair of electrodes connected to the resistance body (a first electrode body, a second electrode body), the resistance body being arranged so as to be at least separated away from a substrate board (a circuit board) when mounted on the substrate board (the circuit board), wherein the resistor has the oxide film on at least one of the resistance body and each of the electrodes (the first electrode body, the second electrode body) at a boundary portion (a bonded portion, a bonded portion) between the resistance body and each of the electrodes (the first electrode body, the second electrode body) on the mounting surface of the resistor.

Abstract: A manufacturing method of a resistor contains: a step of forming a resistor base material by stacking an electrode material, a resistive material, and an electrode material in this order and by bonding the electrode material, the resistive material, and the electrode material by applying pressure in the stacked direction; a step of passing the resistor base material through a die, the die being formed with an opening portion having a dimension smaller than an outer dimension of the resistor base material; and a step of obtaining an individual resistor from the resistor base material passed through the die.

Abstract: A current sensing device including: an insulating resin substrate; a current sensing element arranged in the resin substrate; a current wire provided via an insulating layer with respect to the current sensing element to flow a current through the current sensing element; a plurality of current vias connecting the current sensing element and the current wire through the insulating layer; and a voltage sensing via connected to the current sensing element to measure a voltage drop.

Abstract: The gas sensor is provided with: a base material; a first electrode and a second electrode arranged on the base material; and a gas detection member connected to the first electrode and the second electrode, wherein the gas detection member contains flaky particles of alkaline earth ferrite.

Abstract: A load sensor element includes a substrate made of a ceramic material; an inorganic layer having a surface configured to receive a load, the inorganic layer covers a portion of the substrate; a thin-layer resistance body whose resistance value changes in accordance with the load received by the inorganic layer, the thin-layer resistance body having a main body portion and a pair of end portions, the main body portion mounted on the covered portion of the substrate and sandwiched between the substrate and the inorganic layer, the pair of end portions mounted on an exposed portion of the substrate, and the exposed portion free of the inorganic layer; and a pair of electrodes electrically connected to the pair of end portions of the thin-layer resistance body and separated away from the inorganic layer and on one side of the substrate.

Abstract: The mounting area for an electronic component and a resistor for current detection is reduced. A current detection resistor for detecting current includes a plate-like resistive body, and a first electrode and an opposite second electrode which are stacked in a thickness direction of the resistive body and are disposed so as to sandwich the resistive body. The first electrode has a groove portion.

Abstract: A current detection device (30) includes a resistance element (5), and a pair of electrodes (6, 7). The current detection device (30) has a projecting portion (11). The projecting portion (11) has a portion of the resistance element (5) and portions of the pair of electrodes (6, 7). The electrodes (6, 7) have first wall portions (66b, 67b) forming a portion of the projecting portion (11), and second wall portions (66a, 67a) forming the portion of the projecting portion (11). The electrodes (6, 7) have detection areas (66, 67) demarcated by the first wall portion (66b, 67b), the second wall portion (66a, 67a), a leading end portion (66c, 67c), and a contact surface (6a, 7a). The electrodes (6, 7) have voltage detecting portions (20, 21). The voltage detecting portions (20, 21) are arranged in the detection areas (66, 67) with a gap between the leading end portions (66c, 67c).

Abstract: A chip component 10 comprises: an insulating substrate 1 on which a resistor 3 serving as a functional element is formed; a pair of internal electrodes (front electrodes 2, end surface electrodes 6, and back electrodes 5) that is formed to cover both end portions of the insulating substrate 1 and connected to the resistor 3; a barrier layer 8 that is formed on a surface of each of the internal electrodes and mainly composed of nickel; and an external connection layer 9 that is formed on a surface of the barrier layer 8 and mainly composed of tin, and the barrier layer 8 is composed of alloy plating (Ni—P) including nickel and phosphorus, which is formed by electrolytic plating, and a content rate of phosphorus in the alloy plating of an inner region is made different from that of an outer region so that at least the inner region of the barrier layer 8 has magnetic properties.

Abstract: The resistive material contains copper and manganese, an oxide film of manganese being formed on a surface of the resistive material.

Abstract: The chip-type current fuse is configured to include a fuse element 5 formed between a first front electrode 3 and a second front electrode 4. The fuse element 5 includes: a first linear portion 5a that has an end connected to the first front electrode 3 and extends in a direction toward the second front electrode 4; a second linear portion 5b that has an end connected to the second front electrode 4 and extends in parallel to the first linear portion 5a in a direction toward the first front electrode 3; and an inclined linear portion 5c that links the first linear portion 5a and the second linear portion 5b to each other. The inclined linear portion 5c is connected at an acute angle to each of the first linear portion 5a and the second linear portion 5b.

Abstract: A thermal analysis model includes an intermediate node that imitates an intermediate portion and a first thermal resistance connecting to the intermediate node, and imitates the terminal portions on both sides. A terminal portion inside node connected to the first thermal resistance is configured to imitate an inside area adjacent to the intermediate portion and serves as a starting point of a first heat dissipation path to the substrate. A terminal outside node is configured to imitate an outside area separated from the intermediate portion and adjacent to the inside area in the terminal portions and serves as a starting point of a second heat dissipation path to the substrate. A second thermal resistance connects the terminal portion inside node and the terminal portion outside node and is arranged parallel to a different element imitating a thermal resistance of an electrode layer in a surface of the substrate.

Abstract: A current detection circuit, including: an output circuit to output a signal indicating a voltage drop between a pair of detection terminals; an amplifier circuit to amplify the signal from the output circuit; an AD conversion circuit to generate a digital signal by sampling, at a predetermined cycle, an amplified signal amplified by the amplifier circuit; a filter circuit configured to extract, from the amplified signal amplified by the amplifier circuit, a noise component having a frequency higher than a sampling frequency of the AD conversion circuit; a comparing unit to output a comparison signal indicating a noise detection timing at which an output signal of the filter circuit exceeds a predetermined reference value for detecting the noise component; and an arithmetic circuit to delay a timing at which the amplified signal is sampled by the AD conversion circuit for a predetermined time based on the comparison signal.

Abstract: The present invention relates to a current detection device, in particular a current detection device using a shunt resistor. The current detection device (30) includes a resistive element (5) and a pair of electrodes (6, 7). The electrodes (6, 7) have detection areas (24a, 25a) demarcated by first slits (16, 17), second slits (26, 27), and contact surfaces (6a, 7a) that at least partially contacts the resistive element (5). The electrodes (6, 7) further have voltage detection portions (20, 21) arranged in the detection areas (24a, 25a).