Abstract: A chip resistor includes an insulating substrate, a pair of front electrodes, a pair of back electrodes, a resistor, a second insulating layer covering the resistor, a third insulating layer layered on the second insulating layer, a pair of auxiliary electrode layers made of a resin material containing conductive particles and layered on the front electrodes, a pair of end face electrodes to electrically connect between the auxiliary electrode layers and the back electrodes corresponding thereto, and a pair of external plating layers provided to cover the auxiliary electrode layers and surfaces of the end face electrodes, wherein the auxiliary electrode layers covering surfaces of ends of the third insulating layer, and the second insulating layer contains more inorganic filler than the third insulating layer.

Abstract: The present invention relates to a shunt resistor. The shunt resistor (1) includes at least two elements (150) attached to an electrode member (10). The at least two elements (150) comprise resistance elements (5) having different resistivities.

Abstract: The present invention relates to a shunt resistor and a shunt resistance device. The shunt resistor (1) includes at least two laminated elements (50) having a resistive elements (5) and attached to an electrode member (10). The electrode member (10) has at least two contact portions (10a) that contact the at least two laminated elements (50).

Abstract: Provided is a sensor element capable of obtaining a wide sensing region, suppressing unevenness of a temperature distribution in the sensing region, and obtaining substantially constant sensor sensitivity. A sensor element according to the present invention includes: a base; a temperature-sensitive film formed on an entire surface of the base and having an electric resistance value that changes due to a change in temperature; and wiring members connected to both ends of the temperature-sensitive film. The temperature-sensitive film includes connection regions connected to the wiring members and a pattern extending from each of the connection regions toward a center of the base, and a cross-sectional area of the pattern is smaller on the connection region sides than at the center of the base.

Abstract: The present invention relates a shunt resistor and a shunt resistance device. The shunt resistor (1) includes an electrode member (10). The electrode member (10) includes a contact portion (10a) contacting a resistance element (5), and a slit (20) formed on the contact portion (10a).

Abstract: Provided is a potassium ion-selective electrode with higher stability and a manufacturing method therefor. An all-solid-state potassium ion-selective electrode includes a conductor, an insertion material formed on a surface of the conductor, and a potassium ion-sensitive membrane covering the insertion material. The insertion material is a mixed material containing Prussian blue analogue particles and conductive material particles. The Prussian blue analogue particles are represented by a structural formula KxFe[Fe(CN)6]y·nH2O. The Prussian blue analogue particles have at least partially a monoclinic crystal structure, and x is a number equal to or greater than 1.5 and equal to or less than 2, y is a number greater than 0 and equal to or less than 1, and n is a number equal to or greater than 0.

Abstract: An oxygen sensor element that can achieve electric power saving without losing sensor characteristics has a structure in which an outer surface of a ceramic sintered body as a sensing layer made of a composition LnBa2Cu3O7?? (Ln denotes rare earth element) is covered with heat insulating layers. A heat insulating material having a composition Ln2BaCuO5 is used for the heat insulating layers, and that composition Ln2BaCuO5 is added with 20 mol % of LnBa2Cu3O7??. This allows a sintering behavior of the heat insulating layers to come close to a sintering behavior of the sensing layer, and can thus prevent the occurrence of separation of the layers and cracks. The oxygen sensor element has a sandwich structure where the sensing layer is sandwiched between the heat insulating layers, thereby reducing the amount of heat dissipated from the sensing layer, and making it possible to achieve electric power saving.

Abstract: An object is to provide a sensor device capable of highly accurately detecting a flow rate at 360 degrees in a radial direction with respect to a first sensor element including a resistive element for flow rate detection. A sensor device according to the present invention includes a substrate, a first sensor element including a resistive element for flow rate detection, and a second sensor element including a resistive element for temperature compensation. Each of the first sensor element and the second sensor element is supported to be separated from a surface of the substrate via a pair of lead wires, and the first sensor element is disposed at a higher position than the second sensor element.

Abstract: A sensor element (12) has a cross-sectional area that continuously only increases from a positive (+) electrode side toward a negative (?) electrode side, thereby leading a hot spot, which attempts to move to the negative electrode side, to a lower resistance side. A position that is at nearly equal distances from paired electrodes (13 and 15) formed on either end of the sensor element (12) is set as a hot spot generating position, so as to avoid damage to the electrodes due to heat emitted by the hot spot.

Abstract: The present invention relates to a current detection device, in particular a current detection device using a shunt resistor. The current detection device (30) includes a resistive element (5) and a pair of electrodes (6, 7). The electrodes (6, 7) have detection areas (24a, 25a) demarcated by first slits (16, 17), second slits (26, 27), and contact surfaces (6a, 7a) that at least partially contacts the resistive element (5). The electrodes (6, 7) further have voltage detection portions (20, 21) arranged in the detection areas (24a, 25a).

Abstract: A chip resistor according to the present invention includes an insulating substrate, a pair of back surface electrodes, a pair of top surface electrodes, a resistor, and a pair of end face electrodes. The back surface electrode includes the first electrode portion located inwardly and away from the end face of the insulating substrate, and the two second electrode portions arranged on two portions, respectively, in the short direction of the insulating substrate with the cutout portion, which is positioned between the end face of the insulating substrate and the first electrode portion, being interposed therebetween, and the maximum height of the first electrode portion is set to be more than the maximum height of the second electrode portions.

Abstract: Provided is a copper-manganese-nickel based alloy having characteristics (in particular, specific resistance) close to those of a nickel-chromium based alloy. It is also an objective to provide an alloy having high processability compared to a nickel-chromium based alloy. An alloy for a resistive body includes copper, manganese, and nickel, wherein the manganese is 33 to 38% by mass, and the nickel is 8 to 15% by mass.

Abstract: Provided is a current detection resistor, such as a shunt resistor, wherein a. low specific resistance and a small thermal electromotive force with respect to copper are achieved, while maintaining a low TCR. A resistance alloy for use in a current detection shunt resistor includes 4.5 to 5.5 mass % of manganese, 0.05 to 0.30 mass % of silicon, 0.10 to 0.30 mass % of iron, and a balance being copper, and has a specific resistance of 15 to 25 ??·m.

Abstract: Provided is a resistance alloy enabling a decrease in the TCR of a shunt resistor for use in a current detection device capable of detecting large currents. A copper-manganese based resistance alloy for use in a shunt resistor further comprises tin and nickel and has a TCR less than or equal to ?36×10?6/K at 100° C. with reference to 25° C.

Abstract: A resistor contains a resistance body and a pair of electrodes (a first electrode body and a second electrode body), wherein end surfaces of the resistance body are respectively abutted to and bonded to end surfaces of the electrodes (a first electrode body and a second electrode body), the electrodes (a first electrode body and a second electrode body) each includes a main body portion and a leg portion, the leg portion protruding from the main body portion in the mounting surface of the resister, and a length dimension of the resistor is equal to or shorter than 3.2 mm.

Abstract: A chip resistor comprises an insulating substrate (component body) on which a resistor is formed, a connection terminal (front electrodes, end face electrodes, and back electrodes) formed at both end portions of the insulating substrate, an under layer formed by electrolytic plating to cover the connection terminal, a barrier layer formed by electrolytic plating to cover the under layer, and an external connection layer which is mainly composed of tin and formed on a surface of the barrier layer, wherein the barrier layer is made of alloy plating mainly composed of nickel and containing 3% to 15% of phosphorus, and the under layer is formed of a copper plated layer that is at least either more malleable or more ductile than the barrier layer.

Abstract: The present invention relates to a jumper element, a shunt resistor apparatus, and a method of adjusting characteristic of a shunt resistor apparatus for current detection. The jumper element (10) for constituting the shunt resistor apparatus for current detection is made of conductive metal material. The jumper element (10) includes: a body structure (11) that can be coupled to a resistance element (5) constituting a part of the shunt resistor apparatus; and a protrusion (12) formed on a side portion of the body structure (11), wherein the protrusion (12) is located so as not to overlap the resistor element (5).

Abstract: A circuit protection device includes a pair of electrode portions, an element portion provided between both of the electrode portions and a plate body arranged so as to extend along the element portion. The plate body is made of an insulator, and the circuit protection device further includes an exterior member configured to cover the element portion and the plate body.

Abstract: A load sensor element include: a substrate; an inorganic layer that is a first layer provided on a front surface that is a first surface of the substrate, the inorganic layer being configured to cover a part of the substrate; and a thin-film resistance body provided on the front surface. The thin-film resistance body has: a main body portion that is sandwiched between the substrate and the inorganic layer; and a first end portion and a second end portion that are mounted on an exposed portion of the substrate that is not covered by the inorganic layer. The load sensor element includes a reinforcing layer that is a second layer provided on a back surface that is a second surface of the substrate so as to sandwich the substrate together with the inorganic layer.

Abstract: The present invention relates to a shunt resistor and a current detection apparatus. A current detector (2) includes voltage detection terminals (8A, 8B) provided at first characteristic positions of the electrodes (6, 7) where a temperature coefficient of resistance of a shunt resistor (1) has a first coefficient, and voltage detection terminals (8C, 8D) provided at second characteristic positions of the electrodes (6, 7) where a temperature coefficient of resistance of the shunt resistor (1) has a second coefficient. The first coefficient and the second coefficient have different numerical values.