Abstract: An electronic component according to an embodiment of the present invention includes: a chip; a die pad to which the chip is secured; a suspension terminal extending from the die pad; a lead terminal electrically connected to the chip; and a dummy terminal, in which the suspension terminal is disposed closer to the dummy terminal than the lead terminal.

Abstract: A sulfurization detection resistor makes it possible to detect a degree of sulfurization accurately and easily, and a manufacturing method for such sulfurization detection resistor. A sulfurization detection resistor includes an insulated substrate having a rectangular parallelepiped shape, a first front electrode and a second front electrode formed at both ends on a main surface of the insulated substrate, multiple sulfurization detecting conductors connected in parallel to the first front electrode, multiple resistive elements connected between the sulfurization detecting conductors and the second front electrode, and a protective film formed to partially cover the sulfurization detecting conductors and entirely cover the resistive elements.

Abstract: Provided is a mounting structure for a chip component having high thermal shock resistance. In amounting structure for a chip resistor 1 according to the present invention, a separation distance L1 between a pair of back surface electrodes 3 formed on an insulating substrate 2 of a chip resistor 20 is set to be shorter than a separation distance L2 between a pair of lands 31 provided on a circuit board 30. Each of the back surface electrodes 3 is formed with a thick portion (first electrode portion 3a), and an external electrode 9 deposited on the back surface electrode 3 is connected on the corresponding land 31 via solder 32 with a top portion of the thick portion made positioned directly above an inner end of the land 31.

Abstract: An object is to provide a sensor device capable of highly accurately detecting a flow rate at 360 degrees in a radial direction with respect to a first sensor element including a resistive element for flow rate detection. A sensor device according to the present invention includes a substrate, a first sensor element including a resistive element for flow rate detection, and a second sensor element including a resistive element for temperature compensation. Each of the first sensor element and the second sensor element is supported to be separated from a surface of the substrate via a pair of lead wires, and the first sensor element is disposed at a higher position than the second sensor element.

Abstract: It is an object to provide a flow rate sensor device having improved sensor responsiveness compared with the prior art. The present invention is a flow rate sensor device including a sensor element that detects a flow rate; a unit body including a sensor unit in which the sensor element is mounted, and a case accommodating the unit body, wherein the sensor unit is supported away from a bottom surface of the case. In this way, the sensor unit is supported to float upward from the bottom surface of the case, and a space is provided between the sensor unit and the bottom surface. Therefore, heat caused in the sensor unit can be separated from outside, and good sensor responsiveness can be maintained.

Abstract: A chip resistor according to the present invention includes an insulating substrate, a pair of back surface electrodes, a pair of top surface electrodes, a resistor, and a pair of end face electrodes. The back surface electrode includes the first electrode portion located inwardly and away from the end face of the insulating substrate, and the two second electrode portions arranged on two portions, respectively, in the short direction of the insulating substrate with the cutout portion, which is positioned between the end face of the insulating substrate and the first electrode portion, being interposed therebetween, and the maximum height of the first electrode portion is set to be more than the maximum height of the second electrode portions.

Abstract: After a sulfidation detection conductor (2) is formed on a front surface of a large-sized substrate (10A), a pair of first protective films (3) made of an insoluble material is formed, respectively, on predetermined positions of the sulfidation detection conductor (2), and a second protective film (7) made of a soluble material is formed so as to cover the sulfidation detection conductor (2) positioned between the pair of first protective films (3), and thereafter, end face electrodes (5) are formed, respectively, on divided faces of each strip-shaped substrate (10B) obtained by primarily dividing the large-sized substrate (10A). Then, after external electrodes (6) are formed by performing electrolytic plating with respect to each chip substrate (10C) obtained by secondarily dividing each strip-shaped substrate (10B), a sulfidation detection portion (2a) is exposed to the outside by removing the second protective film (7), whereby a sulfidation detection sensor (10) can be obtained.

Abstract: A sensor device according to the present invention includes a substrate including a heat generation portion, a casing including an accommodation portion accommodating the substrate, and a sensor element including a temperature-sensitive resistor and being supported by the substrate, in which the accommodation portion is divided into a plurality of accommodation spaces on a side closer to the sensor element. The accommodation portion is divided into a first accommodation space and a second accommodation space via division plates, and the first accommodation space is formed on a side closer to the sensor element than the second accommodation space, and widely as compared with the second accommodation space.

Abstract: A shunt resistor 10, 110 includes a flat resistive element 11; a first electrode block 12 that is made of a conductive metal material and is laminated on a lower surface 11a of the resistive element 11; and a second electrode block 13, 113 that is made of a conductive metal material and is laminated on an upper surface 11b of the resistive element 11, in which the second electrode block 13, 113 is a block body including an electrode portion 14 connected to the resistive element 11 and an extension portion 15, 115 extending downward from a side surface of the electrode portion 14.

Abstract: The present invention relates a shunt resistor and a shunt resistance device. The shunt resistor (1) includes an electrode member (10). The electrode member (10) includes a contact portion (10a) contacting a resistance element (5), and a slit (20) formed on the contact portion (10a).

Abstract: A sulfurization detection sensor 10 comprises: a rectangular parallelepiped insulation substrate 1, a pair of front electrodes 2 provided at both ends of a front surface in the longitudinal direction of the insulation substrate 1, respectively, a sulfurization detection conductor 3 connected between the front electrodes 2, a pair of protective films 4 for covering a part of the sulfurization detection conductor 3 and that of the front electrodes 2, respectively, a pair of back electrodes 5 provided at both ends of a back surface in the longitudinal direction of the insulation substrate 1, respectively, a pair of end face electrodes 6 provided at both ends in the longitudinal direction of the insulation substrate 1, respectively, and external electrodes 7 provided on front surfaces of the end face electrodes 6, respectively. Specific regions 3b in which a current hardly flows are formed at both ends in the Y-direction of a sulfurization detection portion 3A.

Abstract: The present invention provides a heterojunction photocatalyst having higher photocatalytic activity than that of a conventional heterojunction photocatalyst. Further, the present invention provides a photocatalyst composite having the heterojunction photocatalyst on a substrate, a method for producing the heterojunction photocatalyst, and a method for producing hydrogen using the heterojunction photocatalyst or the photocatalyst composite The het junction photocatalyst of the present invention has a solid mediator between a hydrogen-evolution photocatalyst and an oxygen-evolution photocatalyst, and the solid mediator is selectively joined to an electrons collecting surface of the oxygen-evolution photocatalyst.

Abstract: Resistive elements are formed in belt shape in regions sandwiched between secondary division prediction lines set onto a large substrate and extending in a direction orthogonal to primary division prediction lines, a plurality of front electrodes disposed facing each other at predetermined intervals on the resistive elements are formed so as to be across the primary division prediction lines, a glass coat layer covering each of the resistive elements and extending in the direction orthogonal to the secondary division prediction lines is formed, a resin coat layer covering an entire surface of the large substrate from a top of the glass coat layer is formed, and after that, the large substrate is diced along the primary division prediction lines and the secondary division prediction lines to obtain individual chip base bodies.

Abstract: The present invention relates to a jumper element, a shunt resistor apparatus, and a method of adjusting characteristic of a shunt resistor apparatus for current detection. The jumper element (10) for constituting the shunt resistor apparatus for current detection is made of conductive metal material. The jumper element (10) includes: a body structure (11) that can be coupled to a resistance element (5) constituting a part of the shunt resistor apparatus; and a protrusion (12) formed on a side portion of the body structure (11), wherein the protrusion (12) is located so as not to overlap the resistor element (5).

Abstract: A chip resistor 10 comprises: a insulating substrate 1; a pair of upper surface electrodes 2; a resistor 3; a pair of lower surface electrodes 5; a pair of resin electrode layers 6 made of synthetic resin materials containing conductive particles and laminated on the pair of lower surface electrodes 5; a pair of end face electrodes 7; and a pair of external electrodes 8, wherein the pair of the lower surface electrodes 5 is made of metal thin film layers formed as thin films on a mounting surface of the insulating substrate 1, respectively, and includes exposed portions 5a exposed from the resin electrode layers 6, respectively, and the pair of external electrodes 8 is in contact with the exposed portions 5a of the lower surface electrodes 5 and entire surfaces of the resin electrode layers 6, respectively. [Selected drawing] FIG.

Abstract: An object is to provide a flow sensor element is non-directional and has an excellent sensor sensitivity. A flow sensor element includes a base body having a spherical shape, and a temperature-sensitive film pattern that is disposed over the entirety of a surface of the base body, and changes in an electrical resistance value due to a change in temperature. It is preferable that the temperature-sensitive film pattern be formed by trimming a temperature-sensitive film that has been formed on the surface of the base body. In the flow sensor element, the temperature-sensitive film pattern can be disposed over the entirety of the surface of the base body having a spherical shape. This enables a constant sensor sensitivity to be obtained regardless of a direction of a fluid, and the accuracy of detection of a flow rate can be improved.

Abstract: The resistor 5 is a print-formed body including a meandering shaped first region 8 connected to the first front electrode 3 and a second region 9 connected to the first region 8 via a linking portion 10 and connected to the second front electrode 4. The first region 8 is provided with an I-cut shaped first trimming groove 11 and the second region 9 is provided with an L-cut shaped second trimming groove 12, and the side of the second region 9 positioned in the direction toward which a turn portion 12b of the second trimming groove 12 extends is an oblique side 9a that inclines to approach the second front electrode 4 as it approaches the connecting portion 7.

Abstract: A shunt resistor (1) includes: a resistance element (3); a first electrode (5A) and a second electrode (5B) coupled to both sides of the resistance element (3); a first fusion material (6A) and a second fusion material (6B) electrically coupled to the first electrode (5A) and the second electrode (5B), respectively, the first fusion material (5A) and the second fusion material (5B) haying electric conductivity; and at least one board (10) coupled to the first electrode (5A) and the second electrode 15B) by the first fusion material (6A) and the second fusion material (6B). The first fusion material (6A) is arranged in a first through-hole (7A) formed in the first electrode (5A) or the board (10), and the second fusion material (6B) is arranged it as second through-hole (7B) formed in the second electrode (5B) or the board (10).

Abstract: A shunt resistor capable of reducing an absolute value of a temperature coefficient of resistance is disclosed. The shunt resistor includes: a base structure including a resistance element and a pair of electrodes; a bridge structure configured to bridge the pair of electrodes and made of a conductor; and connections configured to couple the pair of electrodes to the bridge structure. The bridge structure has a higher resistance than a resistance of the base structure at the connections.