Abstract: A semiconductor device includes a base plate, a plurality of semiconductor units provided in parallel on the base plate, the plurality of semiconductor units implementing a pair, each semiconductor unit including a semiconductor chip and a rod-shaped unit-side control terminal, the unit-side control terminal being connected to the semiconductor chip, the unit-side control terminal extending opposite to the base plate; and an interface unit including a box-shaped accommodating portion, the accommodating portion being provided on the plurality of semiconductor units, the accommodating portion including an internal wiring and a rod-shaped external-connecting control terminal, the internal wiring being connected to each of the plurality of the unit-side control terminals extending from the plurality of semiconductor units, the external-connecting control terminal extending to the outside opposite to the semiconductor units, the external-connecting control terminal being connected to the internal wiring.

Abstract: A semiconductor device includes a base plate, a plurality of semiconductor units provided in parallel on the base plate, the plurality of semiconductor units implementing a pair, each semiconductor unit including a semiconductor chip and a rod-shaped unit-side control terminal, the unit-side control terminal being connected to the semiconductor chip, the unit-side control terminal extending opposite to the base plate; and an interface unit including a box-shaped accommodating portion, the accommodating portion being provided on the plurality of semiconductor units, the accommodating portion including an internal wiring and a rod-shaped external-connecting control terminal, the internal wiring being connected to each of the plurality of the unit-side control terminals extending from the plurality of semiconductor units, the external-connecting control terminal extending to the outside opposite to the semiconductor units, the external-connecting control terminal being connected to the internal wiring.

Abstract: An article surveillance security system with self-alarm operates at 6 through 10 MHz as a central frequency, receives a swept low level radio wave within ±5 through 15% from the central frequency, and sounds the alarm. It includes a tuning circuit (1) tuning to the central frequency, and a differential amplifier (2) for amplifying and detecting the output of the tuning circuit. The load resistance (R1) of the differential amplifier is set to 3 through 5 M&OHgr;, and the operating current of the differential amplifier is set to 3 &mgr;A or less. The base-emitter of the amplification/detection transistor (Tr1) of the differential amplifier are connected to the base-emitter of another diode-connected transistor (Tr2) to stabilize a bias drift by temperature. Thus, a receiving circuit of an article surveillance security system with self-alarm (tag) is realized with ability having a power supply of approximately four-year durability, stably operating with a very low level radio wave at 8.

Abstract: A process for preparing ceramic moldings containing no organic matter with retention of their original shapes which comprises mixing 100 parts by weight of ceramic powders and/or fibers, 0.1 to 50 parts by weight of papermaking organic fibers and/or wet-end additives and 3 to 200 parts by weight of mountain leather, molding the resulting mixture to obtain an unburned molding having enough mechanical strength to withstand molding processings and, subjecting the unburned molding to burning treatment.