Abstract: There is provided a technique that includes: removing a portion of a substance Y from a substrate by performing a cycle a predetermined number of times, the cycle including: (a1) supplying a first gas containing a first halogen element to the substrate, including a surface of the substance Y containing an element X, to form a first product, containing the first halogen element and the element X, on the substrate; and (b1) supplying a second gas containing a second halogen element to the substrate to convert a portion of the first product into a second product containing the element X and having a higher vapor pressure than the first product, wherein (b1) is performed under a condition where a portion of the substance Y is removable from the substrate when the second gas is supplied to the substance Y not containing the first halogen element on the surface.

Abstract: There is provided a technique that enables stable temperature measurement for a long period under a high-temperature environment. It includes (a) an insulating tube with two through-holes, through which two conductive wires of a temperature sensor are respectively inserted, (b) a first protective tube, through which the insulating tube is inserted inwardly from a first end thereof, (c) a cylindrical sleeve airtightly connected to the first end of the first protective tube and airtightly installed to an installation port from an outside of a furnace, and (d) a second protective tube mounted to the installation port from a furnace and covering the entire first protective tube on the inside of the furnace.

Abstract: There is provided a technique that includes: by using a substrate transfer apparatus including a mounting stage on which a substrate is placed and a gripper capable of gripping the substrate placed on the mounting stage between a first portion and a second portion, moving the substrate placed on the mounting stage toward the first portion by using the second portion that pushes the substrate with a first external force; and gripping the substrate placed on the mounting stage with a second external force or a third external force by using the first portion and the second portion.

Abstract: There is provided a technique that includes: a process container; an exhaust pipe connected to the process container; an opening/closing valve installed at the exhaust pipe; a pressure regulating valve installed at the exhaust pipe; a first supply system supplying one of a cleaning gas and an additive gas, having a molecular structure different from that of the cleaning gas, into the exhaust pipe through a gas supply pipe connected to an upstream of at least one of the opening/closing and pressure regulating valves; a second supply system supplying the other of the cleaning gas and the additive gas into the process container; and a controller capable of controlling the opening/closing valve, the pressure regulating valve, and the first and second supply systems so as to perform a cleaning process of simultaneously supplying the cleaning gas and the additive gas while the opening/closing and pressure regulating valves are opened.

Abstract: Described herein is a technique capable of improving a controllability of a thickness distribution of an oxide film formed on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas to a heated substrate at a first pressure less than an atmospheric pressure and by oxidizing a surface of the substrate; and (b) forming a second oxide layer by supplying the oxygen-containing gas and the hydrogen-containing gas to the heated substrate at a second pressure less than the atmospheric pressure and different from the first pressure and by oxidizing the surface of the substrate on which the first oxide layer is formed.

Abstract: A substrate processing apparatus includes a process chamber in which one or more substrates are processed; and a substrate support configured to support the one or more substrates in the process chamber. The substrate support includes one or more plate-shaped structures arranged in the substrate support in a manner corresponding to the one or more substrates, and a thickness of a central portion of a plate-shaped structure among the one or more plate-shaped structures is different from a thickness of an outer peripheral portion of the plate-shaped structure located outer of the central portion.

Abstract: There is provided a technique that includes: (a) regulating a temperature in a process chamber configured to accommodate a plurality of substrates so that a temperature distribution in an arrangement direction of the substrates in the process chamber becomes a first distribution in which at least a portion of an inside of the process chamber becomes a first temperature; (b) loading the substrates into the process chamber in a state where the temperature distribution in the arrangement direction is the first distribution; (c) after (b), regulating the temperature in the process chamber so that the temperature distribution in the arrangement direction becomes a second distribution in which at least a portion of the inside of the process chamber becomes a second temperature different from the first temperature; and (d) after (c), processing the substrates in a state where the temperature distribution in the arrangement direction is the second distribution.

Abstract: Described herein is a technique capable of improving the controllability of firm thickness distribution. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a first and a second gas supply system; an exhaust system; and a controller for controlling the first and the second gas supply system and the exhaust system to form a film. The first gas supply system includes: a first and a second storage part; a first gas supply port for supplying a gas stored in the first storage part from an outer periphery toward a center of a substrate; and a second gas supply for supplying the gas stored in the second storage part from the outer periphery along a direction more inclined toward the outer periphery than a direction from the outer periphery toward the center of the substrate.

Abstract: There is provided a technique that includes: (a) forming an intermediate layer containing carbon on a first film formed on a substrate; and (b) forming a second film containing nitrogen on the intermediate layer by using an activated nitrogen-containing gas, wherein in (a), the intermediate layer is formed such that a carbon content per unit area in the intermediate layer differs between a central region and an outer region in a substrate plane of the substrate.

Abstract: A method of processing a substrate includes: (a) providing a substrate; (b) supplying a processing gas to the substrate that the surface of the substrate is modified to be OH-terminated; (c) supplying a gas including at least one element selected from Si, Ti, Mo, Al, W, Hf or Zr and a halogen element to the substrate; (d) supplying a gas including one or both of an oxygen element and a nitrogen element to the substrate after (c); and (e) repeating (c) and (d), wherein in (b), the supply of the processing gas and a supply of an inert gas are performed.

Abstract: There is provided a technique that includes: forming a multilayer film with a predetermined thickness on the substrate by performing a cycle a predetermined number of times, the cycle including: (a) depositing a primitive film by exposing the substrate to a precursor gas; and (b) exposing the substrate to a crystal growth inhibition gas or a predetermined gas that forms a film with a different film quality from the primitive film, wherein the predetermined number of times is set such that an absolute value or a gradient of a residual stress of the multilayer film after annealing the multilayer film is smaller than an allowable value.

Abstract: There is provided a technique that includes: a gas supply pipe including therein a flow path through which a gas flows; at least one temperature sensor including a temperature measurement gauge disposed outside the gas supply pipe; and a protective tube inside which the gas supply pipe and the at least one temperature sensor are disposed, wherein an outlet of the gas supply pipe configured to eject the gas into the protective tube is positioned higher than the at least one temperature sensor, and the gas descends via a gap between an outer wall of the at least one temperature sensor and an inner wall of the protective tube.

Abstract: There is provided a technique that includes forming a film containing a first element on at least a portion of a substrate having a first surface and a second surface, which are made of different substances, by performing a first cycle a first number of times, the first cycle including non-simultaneously performing: (a1) supplying a first gas containing the first element to the substrate to form a substance X containing the first element on the at least a portion of the substrate; and (a2) supplying a first reaction gas, which reacts with the substance X, to the substrate, wherein an incubation time of the first gas on the second surface is longer than an incubation time of the first gas on the first surface, and in (a1), at least a portion of the substance X formed on the substrate is removed.

Abstract: There is provided a technique that includes: (a) forming a first film containing a first element and a second element on a surface of a first base by supplying a first film-forming agent to a substrate including the first base and a second base; (b) forming an inhibitor layer on the first film by supplying a modifying agent to the substrate and causing at least a portion of molecular structures of molecules constituting the modifying agent to be adsorbed on the first film; and (c) forming a second film containing the first element and the second element on a surface of the second base by supplying a second film-forming agent to the substrate with the inhibitor layer formed on the first film.

Abstract: There is provided a technique that includes (a) supplying a first gas and a second gas to a substrate to form a film, and (b) improving a flatness of a surface of the film.

Abstract: A method of processing a substrate includes: (a) providing a substrate; (b) supplying a processing gas including H and O containing radicals to the substrate; (c) supplying a gas including at least one element selected from Si, Ti, Mo, Al, W, Hf or Zr and a halogen element to the substrate; (d) supplying a gas including one or both of an oxygen element and a nitrogen element to the substrate after (c); and (e) repeating (c) and (d), wherein in (b), the supply of the processing gas and a supply of an inert gas are performed.

Abstract: According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction chamber in which a substrate is processed; a lid configured to close a furnace opening of the reaction chamber; a base provided below the lid; and a connector provided to connect the lid and the base. The connector includes: a shaft provided at the lid; an elastic structure provided to surround the shaft and configured to hold the lid; a cap provided to surround the elastic structure and provided at the base; a fixing block provided below the cap; and a moving block held by a holder provided between the fixing block and the shaft.

Abstract: There is provided a technique that includes: a mounting table configured to be capable of mounting a substrate on the mounting table; a heater located above the mounting table and configured to radiate heat rays toward the substrate mounted on the mounting table to heat the substrate; a process container disposed below the heater and configured to accommodate the mounting table, wherein at least a portion of the process container, which is located adjacent to the heater, is made of opaque quartz; and a sealer configured such that transmission of heat rays reflected from the substrate to the sealer is suppressed by the at least a portion of the process container and airtightness between the process container and the heater is maintained by a seal.

Abstract: There is provided a technique that includes: (a) supplying a first gas containing a group XIV element to a substrate on which a film containing the group XIV element is formed such that reaction by-products generated by reaction with the group XIV element contained in the film formed on the substrate are saturated and adsorbed on the substrate; (b) supplying a second gas containing a halogen after (a); and (c) etching the film containing the group XIV element formed on the substrate by alternately repeating (a) and (b).

Abstract: According to one aspect of the technique, there is provided a substrate processing apparatus including: a process housing including a process chamber in which a substrate is processed; a transfer housing provided adjacent to the process housing and having a transfer chamber wherein the substrate is transferred between the process chamber and the transfer chamber; a microwave generator configured to transmit a microwave to be supplied into the process chamber; a loading/unloading port connecting between the process chamber and the transfer chamber and through which the substrate is transferred; an opening/closing structure configured to open or close the loading/unloading port; and a detection sensor provided in the transfer chamber adjacent to the loading/unloading port and configured to detect the microwave leaking to the transfer chamber from the process chamber through the loading/unloading port while the opening/closing structure maintains the loading/unloading port closed.