Patents Assigned to Kokusai Electric Corporation
  • Patent number: 10731254
    Abstract: There is provided a technique that includes a protective plate installed on a lid, including: a disc portion, of which a lower surface is in contact with an upper surface of the lid, a side wall portion extending from an outer peripheral end of the disc portion, a groove formed in the lower surface of the disc portion, and a stepped portion formed to be closer to the outer peripheral end of the disc portion than the groove, a clearance formed between the upper surface of the lid and the stepped portion, wherein the groove is configured to be able to form a flow of a gas that runs through a gap between the lid and the stepped portion, and is supplied to an outside of the side wall portion.
    Type: Grant
    Filed: January 21, 2020
    Date of Patent: August 4, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Shuhei Saido, Hidenari Yoshida, Yusaku Okajima
  • Patent number: 10734218
    Abstract: There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: August 4, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito Ogawa, Atsuro Seino
  • Publication number: 20200243325
    Abstract: A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.
    Type: Application
    Filed: April 10, 2020
    Publication date: July 30, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Tsukasa KAMAKURA, Takaaki NODA, Yoshiro HIROSE
  • Publication number: 20200240019
    Abstract: Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. A first exhaust portion for discharging an atmosphere of the processing region, and a second exhaust portion for discharging an atmosphere of the adiabatic region, formed at a position overlapping with the adiabatic region in a height direction, are included.
    Type: Application
    Filed: April 8, 2020
    Publication date: July 30, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hidenari YOSHIDA, Tomoshi TANIYAMA, Takayuki NAKADA
  • Publication number: 20200243324
    Abstract: A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.
    Type: Application
    Filed: April 10, 2020
    Publication date: July 30, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Tsukasa KAMAKURA, Takaaki NODA, Yoshiro HIROSE
  • Publication number: 20200232097
    Abstract: There is provided a substrate processing apparatus including a process chamber defined at least by a reaction tube and a furnace opening part provided at a lower portion of the reaction tube; a nozzle provided at the furnace opening part and extending from the furnace opening part to an inside of the reaction tube; a gas supply system provided at an upstream side of the nozzle; a blocking part provided at a boundary between the gas supply system and the nozzle; and a controller configured to control the gas supply system and the blocking part such that the blocking part co-operates with the gas supply system to supply gases into the process chamber through the nozzle.
    Type: Application
    Filed: March 27, 2020
    Publication date: July 23, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Mikio OHNO, Atsushi UMEKAWA, Takeo HANASHIMA, Hiroaki HIRAMATSU
  • Patent number: 10720325
    Abstract: Provided is a technique which includes forming on a substrate an oxide film containing silicon or a metal element and doped with a dopant by performing a cycle a predetermined number of times, wherein the cycle includes sequentially and non-simultaneously performing: (a) supplying a first gas to the substrate wherein the first gas is free of chlorine and contains boron or phosphorus as the dopant; (b) supplying a second gas to the substrate wherein the second gas contains silicon or the metal element; and (c) supplying a third gas to the substrate wherein the third gas contains oxygen.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: July 21, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Takafumi Nitta, Yushin Takasawa, Satoshi Shimamoto, Hiroki Yamashita
  • Patent number: 10720324
    Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a film on a substrate by causing a first precursor and a second precursor to intermittently react with each other by repeating a cycle a plurality of times, the cycle alternately performing supplying the first precursor, which satisfies an octet rule and has a first pyrolysis temperature, to the substrate and supplying the second precursor, which does not satisfy the octet rule and has a second pyrolysis temperature lower than the first pyrolysis temperature, to the substrate. In the act of forming the film, a supply amount of the first precursor is set larger than a supply amount of the second precursor.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: July 21, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kimihiko Nakatani, Hiroshi Ashihara, Hajime Karasawa, Kazuhiro Harada
  • Patent number: 10714362
    Abstract: Wafer processing with no dummies is sets forth, wherein an apparatus includes: a boat that hold a product substrates in array at all of positions where substrates may be held; a tubular reactor that houses the boat; a furnace surrounding an upper side and a lateral side of the reactor; a heater provided in the furnace and adapted to heat a side portion of the reactor; a ceiling heater provided in the furnace and adapted to heat a ceiling of the reactor; and a cap heater provided inside the reactor and below the boat; a gas supply mechanism individually supplying a gas to a top side of each of the product substrates.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: July 14, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventor: Shuhei Saido
  • Patent number: 10714316
    Abstract: There is provided a technique that includes supplying a first process gas to a process space where a substrate is accommodated, and using an inert gas as a carrier gas of the first process gas; and supplying plasma of a second process gas to the process space where the substrate is accommodated, and using an active auxiliary gas as a carrier gas of the second process gas.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: July 14, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Tsukasa Kamakura, Kazuhiro Morimitsu, Hideharu Itatani, Eisuke Nishitani, Shun Matsui
  • Patent number: 10714336
    Abstract: According to one of the embodiments of the present disclosure, there is provided a technique that includes: (a) forming a seed layer in an amorphous state on a substrate by supplying a source gas to the substrate; (b) polycrystallizing the seed layer by processing the seed layer by heat; and (c) performing a cycle a predetermined number of times to form an oxide film on a polycrystallized seed layer and to oxidize the polycrystallized seed layer, the cycle including: (c-1) supplying the source gas to the substrate; and (c-2) supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate, wherein (c-1) and (c-2) are non-simultaneously performed.
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: July 14, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Hideki Horita, Masato Terasaki
  • Publication number: 20200216961
    Abstract: A processing container including a plasma generation space in which a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a plasma generator including a coil arranged to surround the plasma generation space and provided to be wound around an outer periphery of the processing container, and a high-frequency power source that supplies high-frequency power to the coil; a gas supply section that supplies the processing gas to the plasma generation space; a temperature sensor provided outside the processing container and configured to detect a temperature of the processing container; and a controller configured to perform control to cause the temperature of the processing container detected by the temperature sensor to fall within a range of a target temperature defined by a preset upper limit value and a preset lower limit value, prior to execution of a process recipe for processing a substrate.
    Type: Application
    Filed: March 19, 2020
    Publication date: July 9, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Makoto NOMURA, Yasuhiro MIZUGUCHI, Kazuhito SAITO, Takashi YOKAWA, Makoto SHIRAKAWA, Masako SUEYOSHI
  • Publication number: 20200219699
    Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.
    Type: Application
    Filed: March 17, 2020
    Publication date: July 9, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Takeshi YASUI, Katsunori FUNAKI, Masaki MUROBAYASHI, Koichiro HARADA
  • Publication number: 20200216958
    Abstract: A substrate processing apparatus for preventing adhesion of by-products to an inner surface of a furnace opening is disclosed. An apparatus is provided with: a process chamber, a substrate holder, a process gas supplier that supplies a process gas into the process chamber, a first heater that is installed outside the process chamber and heats an inside of the process chamber, a heat insulator that is installed between a lid of the process chamber and the substrate holder, a second heater that is installed near the substrate holder in the heat insulator and heats the inside of the process chamber, a third heater that is installed near an end closer to the lid in the process chamber and heats the end, and a supplier that supplies a purge gas to purge around the second and third heaters into the heat insulator.
    Type: Application
    Filed: September 13, 2017
    Publication date: July 9, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventor: Shuhei SAIDO
  • Publication number: 20200219727
    Abstract: There is provided a technique that includes selectively doping a metal film with a dopant by performing: supplying a dopant-containing gas containing the dopant to a substrate in which the metal film and a film other than the metal film are formed on a film in which the dopant is doped; and removing the dopant-containing gas from above the substrate.
    Type: Application
    Filed: March 13, 2020
    Publication date: July 9, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Motomu DEGAI, Hiroshi ASHIHARA
  • Publication number: 20200219745
    Abstract: There is provided a configuration that includes a substrate holder configured to hold substrates; a transfer mechanism configured to transfer the substrates to the substrate holder; and a controller configured to: acquire a number of substrates mountable on the substrate holder and a number of the product substrates to be mounted on the substrate holder; divide the product substrates into product substrate groups; divide the dummy substrates into dummy substrate groups based on the number of the product substrates, the number of the substrates mountable on the substrate holder, and a number of the product substrate groups; combine the product substrate groups and the dummy substrate groups; create substrate arrangement data for distributing and mounting the product substrates on the substrate holder; and cause the transfer mechanism to transfer the substrates according to the substrate arrangement data.
    Type: Application
    Filed: March 17, 2020
    Publication date: July 9, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Tadashi OKAZAKI, Hajime ABIKO, Tomoyuki MIYADA, Yukinao KAGA
  • Publication number: 20200219717
    Abstract: A substrate processing apparatus includes: a process chamber configured to process a substrate; a precursor gas supply section for supplying a precursor gas; a reactant gas supply section for supplying a reactant gas; an exhauster for exhausting the process chamber; a plasma generator including first and second plasma generators for converting the reactant gas into plasma to activate the reactant gas, the first and second plasma generators being disposed so that a straight line passing through the center of the process chamber and the exhauster is interposed therebetween; and a gas rectifier including a first partition member disposed along an inner wall of the process chamber between the precursor gas supply section and the first plasma generator, and a second partition member disposed at an outer circumferential portion of the substrate along an inner wall of the process chamber between the precursor gas supply section and the second plasma generator.
    Type: Application
    Filed: March 16, 2020
    Publication date: July 9, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Akihiro SATO, Daisuke HARA
  • Patent number: 10707074
    Abstract: By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: July 7, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Yoshimasa Nagatomi, Hirohisa Yamazaki
  • Patent number: D889596
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: July 7, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yusaku Okajima, Toru Kagaya, Hiroaki Hiramatsu, Shinya Ebata
  • Patent number: D890572
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: July 21, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Koji Saiki, Makoto Tsuri