Patents Assigned to Kokusai Electric Corporation
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Publication number: 20250051911Abstract: A film forming method for forming a film on a workpiece is disclosed including: supplying a source gas into a treatment container provided with the workpiece to adsorb the source gas on the workpiece, and then purging an inside of the treatment container with a first purge gas, and supplying a reaction gas into the treatment container after the source gas supply process to oxidize the source gas adsorbed on the workpiece, and then purging the inside of the treatment container with a second purge gas, in which for example, the source gas and a first catalyst gas are supplied to the treatment container in the source gas supply process, the reaction gas and a second catalyst gas are supplied to the treatment container in the reaction gas supply process, and the same or different non-aromatic amine gas are used as the first catalyst gas and the second catalyst gas.Type: ApplicationFiled: December 14, 2022Publication date: February 13, 2025Applicants: AIR WATER INC., KOKUSAI ELECTRIC CORPORATIONInventors: Fumio KAWASAKI, Keisuke NAGATA, Yasunori OTSUKA, Kimihiko NAKATANI, Yoshitomo HASHIMOTO, Yoshiro HIROSE
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Publication number: 20250054794Abstract: Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a processing method including: (a) transferring a substrate from a storage container storing one or more substrates including the substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber when it is determined that a maintenance timing is reached based on information comprising at least the number of processed substrates; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, and setting the process chamber to a maintenance enable state after the substrate processing is completed by stopping the one or more substrates from being transferred into the process chamber.Type: ApplicationFiled: October 31, 2024Publication date: February 13, 2025Applicant: Kokusai Electric CorporationInventors: Yasuhiro MIZUGUCHI, Naofumi OHASHI, Tadashi TAKASAKI, Shun MATSUI
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Patent number: 12224185Abstract: There is provided a technique that includes adjusting a pressure of each of a plurality of process chambers, by adjusting an opening degree of a pressure-adjusting valve included in a common gas exhaust pipe, which is connected to a plurality of process chamber exhaust pipes and is disposed to merge respective process chamber exhaust pipes on a downstream side of the plurality of process chamber exhaust pipes, to a predetermined opening degree and by exhausting an atmosphere of each of the process chambers from the plurality of process chamber exhaust pipes and the common gas exhaust pipe while supplying an inert gas to the plurality of process chambers; processing a substrate in each of the process chambers; and detecting a fluctuation of pressures in the process chamber exhaust pipes by measuring, by one or more pressure detectors, the pressures of the process chamber exhaust pipes.Type: GrantFiled: July 18, 2023Date of Patent: February 11, 2025Assignee: Kokusai Electric CorporationInventors: Hideharu Itatani, Toshiyuki Kikuchi, Naofumi Ohashi
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Publication number: 20250043418Abstract: There is provided a technique that includes (a) supplying a first gas, which inhibits a second gas from adsorbing to a first adsorption site, to a substrate including a predetermined surface on which the first adsorption site exists; and (b) supplying the second gas to the substrate under a condition in which an amount of adsorption of the second gas on the predetermined surface becomes self-limiting, wherein (a) begins at the same time as (b) or before (b), and wherein the first gas has a larger amount of adsorption on the predetermined surface than the second gas.Type: ApplicationFiled: June 18, 2024Publication date: February 6, 2025Applicant: Kokusai Electric CorporationInventors: Kazuki NONOMURA, Arito Ogawa
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Publication number: 20250043424Abstract: A substrate processing apparatus includes: (a) a process tube including a cylindrical portion which is closed at an upper end and accommodates at least one substrate therein; (b) a supply buffer provided on a sidewall of the cylindrical portion to protrude outward from the sidewall; (c) at least one first injector provided inward of the supply buffer to extend along an axial direction of an axis of the cylindrical portion; and (d) a plurality of exhausters formed in the sidewall of the cylindrical portion to exhaust a precursor gas, the plurality of exhausters including a pair of exhausters open such that both sides of the pair of exhausters sandwich a virtual plane set to pass through a circumferential center of the cylindrical portion and the axis of the cylindrical portion at a boundary between the supply buffer and the cylindrical portion in a plan view.Type: ApplicationFiled: October 18, 2024Publication date: February 6, 2025Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Atsushi HIRANO, Kenta KASAMATSU, Hideyuki NISHIMOTO, Taketoshi MORIYA
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Patent number: 12217959Abstract: There is provided a technique that includes: forming a film on a substrate by performing, simultaneously at least for a predetermined period: supplying a first precursor to the substrate, the first precursor containing a chemical bond of a predetermined element and nitrogen or a chemical bond of the predetermined element and carbon, containing a chemical bond of the predetermined element and hydrogen, and not containing a chemical bond of nitrogen and hydrogen; and supplying a pseudo catalyst to the substrate, the pseudo catalyst containing a Group 13 element and not containing the chemical bond of nitrogen and hydrogen, wherein in the act of forming the film, a substance containing the chemical bond of nitrogen and hydrogen is not supplied to the substrate.Type: GrantFiled: August 28, 2018Date of Patent: February 4, 2025Assignee: Kokusai Electric CorporationInventors: Kimihiko Nakatani, Tsukasa Kamakura, Hajime Karasawa, Kazuhiro Harada
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Patent number: 12211689Abstract: Described herein is a technique capable of improving a controllability of a thickness distribution of an oxide film formed on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas to a heated substrate at a first pressure less than an atmospheric pressure and by oxidizing a surface of the substrate; and (b) forming a second oxide layer by supplying the oxygen-containing gas and the hydrogen-containing gas to the heated substrate at a second pressure less than the atmospheric pressure and different from the first pressure and by oxidizing the surface of the substrate on which the first oxide layer is formed.Type: GrantFiled: March 17, 2021Date of Patent: January 28, 2025Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Keigo Nishida, Takashi Ozaki, Takafumi Sasaki
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Patent number: 12203169Abstract: Even when two processing furnaces are included, space can be saved by removing needed equipment. Included are: first and second furnaces that process a substrate; a heat exchanger that cools a refrigerant discharged from the first and second furnaces; an exhaust blower that sucks the refrigerant discharged from the heat exchanger and sends out the refrigerant to a downstream side; first and second flow paths that connect the first and second furnaces, the heat exchanger, and the exhaust blower to each other such that the refrigerant can flow therethrough; first and second dampers having variable opening degrees disposed upstream from the heat exchanger in the first and second flow paths, respectively; and a controller that controls heating and cooling of the first and second furnaces. The first and second flow paths merge together in at least a part of each of the first and second flow paths.Type: GrantFiled: December 30, 2021Date of Patent: January 21, 2025Assignee: Kokusai Electric CorporationInventor: Akira Horii
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Patent number: 12203167Abstract: Described herein is a technique capable of improving a film thickness uniformity on a surface of a wafer whereon a film is formed. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a process gas nozzle configured to supply a process gas into the process chamber; an inert gas nozzle configured to supply an inert gas into the process chamber while a concentration of the process gas at the center of the substrate is higher than a concentration required for processing the substrate; and an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; wherein the process gas nozzle and the inert gas nozzle are disposed beside the edge of substrate with a predetermined distance therebetween corresponding to an angle of circumference of 90 to 180 degrees.Type: GrantFiled: November 20, 2023Date of Patent: January 21, 2025Assignee: Kokusai Electric CorporationInventors: Hidetoshi Mimura, Takafumi Sasaki, Hidenari Yoshida, Yusaku Okajima
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Publication number: 20250022703Abstract: Provided is a technique of processing a substrate including (a) adsorbing a first adsorption inhibitor to a first portion of the substrate at a first temperature, (b) forming a film on a second portion of the substrate by supplying a processing gas at a second temperature, (c) removing at least a part of the first adsorption inhibitor adsorbed to the substrate, at a third temperature, (d) supplying a second adsorption inhibitor to the substrate at a fourth temperature higher than or equal to the first temperature, (e) supplying the processing gas to the substrate at a fifth temperature, and (f) removing at least a part of the second adsorption inhibitor adsorbed to the substrate, at a sixth temperature. Where (b) is performed after (a), (c) is performed after (b), (d) is performed after (c), (e) is performed after (d), and (f) is performed after (e).Type: ApplicationFiled: September 30, 2024Publication date: January 16, 2025Applicant: Kokusai Electric CorporationInventors: Yukinori ABURATANI, Naofumi OHASHI, Tetsuo YAMAMOTO
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Publication number: 20250022753Abstract: There is provided a technique that includes: preparing the substrate including a silicon-containing film and a metal film composed of a metal element, which includes at least one selected from the group of tungsten, titanium, ruthenium, and molybdenum and, which are formed on a surface of the substrate; and simultaneously performing modifying the metal film and modifying the silicon-containing film by supplying reactive species, which are generated by plasma-exciting a processing gas containing hydrogen and oxygen, to the substrate.Type: ApplicationFiled: September 27, 2024Publication date: January 16, 2025Applicant: Kokusai Electric CorporationInventors: Masanori NAKAYAMA, Katsunori FUNAKI, Tatsushi UEDA, Yasutoshi TSUBOTA, Yuichiro TAKESHIMA, Hiroto IGAWA, Yuki YAMAKADO
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Publication number: 20250022708Abstract: Described herein is a technique capable of forming a flat film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) forming a first layer containing silicon on a substrate by performing a first cycle once or more, wherein the first cycle includes: (a1) supplying a first element-containing gas containing a first element other than silicon to the substrate; (a2) supplying a first reducing gas to the substrate non-simultaneously with (a1); and (a3) supplying a first silicon-containing gas to the substrate; and (b) forming a second layer on the first layer by performing a second cycle once or more after (a), wherein the second cycle comprises: (b1) supplying a second element-containing gas to the substrate; and (b2) supplying a second reducing gas to the substrate.Type: ApplicationFiled: September 30, 2024Publication date: January 16, 2025Applicant: Kokusai Electric CorporationInventors: Takuya JODA, Arito OGAWA, Norikazu MIZUNO, Shogo HAYASAKA, Koei KURIBAYASHI
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Publication number: 20250022702Abstract: Provided is a method of processing a substrate including: forming a film on the substrate by performing a cycle, multiple times, including non-simultaneously performing: (a) supplying a precursor gas and inert gas to the substrate; and (b) supplying a reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration or amount of the precursor gas differs between the first and second tank. Further, in (a), the process chamber is filled with the inert gas before the precursor gas and the inert gas are supplied to the substrate.Type: ApplicationFiled: October 2, 2024Publication date: January 16, 2025Applicant: Kokusai Electric CorporationInventors: Masayuki ASAI, Tomoki IMAMURA, Kazuyuki OKUDA, Yasuhiro INOKUCHI, Norikazu MIZUNO
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Patent number: 12195848Abstract: There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.Type: GrantFiled: February 24, 2023Date of Patent: January 14, 2025Assignee: Kokusai Electric CorporationInventors: Kazuhiro Harada, Shingo Nohara, Yuji Urano, Yasunobu Koshi, Masayoshi Minami
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Patent number: 12195854Abstract: A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.Type: GrantFiled: January 23, 2024Date of Patent: January 14, 2025Assignee: Kokusai Electric CorporationInventors: Teruo Yoshino, Takeshi Yasui, Masaki Murobayashi, Koichiro Harada, Tadashi Terasaki, Masanori Nakayama
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Patent number: 12198929Abstract: A method of processing a substrate includes: (a) providing a substrate; (b) supplying a processing gas comprising H2O-containing radicals to the substrate; (c) supplying a gas including at least one element of Si, Ti, Mo, Al, W, Hf or Zr and a halogen element to the substrate; (d) supplying a gas including one or both of an oxygen element and a nitrogen element to the substrate after (c); and (e) repeating (c) and (d).Type: GrantFiled: November 7, 2023Date of Patent: January 14, 2025Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Hiroshi Ashihara, Toshiyuki Kikuchi
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Patent number: 12195853Abstract: There is provided a technique that includes: a reaction container configured to accommodate a substrate; an exhaust pipe configured to exhaust an atmosphere inside the reaction container; a gas supplier configured to supply a process gas to the substrate; a gas supply system including at least one gas supply pipe kept in fluid communication with the gas supplier and configured to supply the process gas, a plurality of valves provided on the at least one gas supply pipe, and a plurality of pressure detectors provided between the plurality of valves; and a controller configured to be capable of determining a blockage level of the at least one gas supply pipe based on at least one pressure among measurement results of the plurality of pressure detectors.Type: GrantFiled: September 15, 2021Date of Patent: January 14, 2025Assignee: Kokusai Electric CorporationInventors: Motonari Takebayashi, Hiroshi Nakajo
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Publication number: 20250011926Abstract: It is possible to improve characteristics of a film formed on a substrate. There is provided a technique that includes: (a) performing a first supply of a source gas containing a first element and a halogen element to a substrate; (b) performing a supply of a first reducing gas to the substrate; (c) performing a supply of a second reducing gas to the substrate; (d) performing a second supply of the source gas to the substrate, (e) executing (b) and (d) X times without performing a purge between (b) and (d); and (f) executing (e) and (c) Y times.Type: ApplicationFiled: September 25, 2024Publication date: January 9, 2025Applicant: KOKUSAI ELECTRIC CORPORATIONInventor: Arito OGAWA
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Publication number: 20250014930Abstract: Provided is a technique including: a first container mover capable of moving a container; a second container mover disposed at a position different from the first container mover and capable of moving the container; a plurality of process modules capable of processing a substrate in the container; a substrate carrier disposed between the first container mover and the second container mover, configured to be communicable with the plurality of process modules, and capable of carrying the substrate; a substrate carry robot provided in the substrate carrier and capable of carrying the substrate to the process module; a third container mover disposed between the first container mover and the second container mover, and capable of moving the container from the first container mover to the second container mover; and a controller.Type: ApplicationFiled: September 24, 2024Publication date: January 9, 2025Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Tsukasa KAMAKURA, Tetsuaki INADA
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Publication number: 20250014891Abstract: There is provided a technique that includes: (a) supplying a decomposable process gas containing silicon to the substrate to form a layer containing a Si—Si—Si bond on the substrate; and (b) supplying a reaction gas to the substrate to dissociate the Si—Si—Si bond.Type: ApplicationFiled: July 3, 2024Publication date: January 9, 2025Applicant: Kokusai Electric CorporationInventors: Hiroyuki KOIDE, Nagisa SUYAMA, Tomoya NAGAHASHI