Abstract: According to some embodiments of the present disclosure, a gas line whose gas flow rate is to be edited by a user can be confirmed. There is provided a technique that includes: (a) displaying, on a recipe edit screen, a parameter setting region configured to set control parameters including a gas flow rate of a flow rate controller and a gas pattern screen configured to set an opening/closing state of a valve; (b) editing the recipe on the recipe edit screen; and (c) processing a substrate by performing the recipe edited in (b). When the gas flow rate of the flow rate controller is set on the parameter setting region, a flow rate controller on the gas pattern screen in association with the flow rate controller whose gas flow rate is set on the parameter setting region is clearly specified.

Abstract: There is provided a technique, which includes: dividing an inside of a process chamber, into which a cleaning gas is to be supplied, into three or more zones in a gas flow direction and heating the inside of the process chamber such that, in the process chamber, a temperature difference between a zone positioned on an upstream side in the gas flow direction and a zone adjacent to the zone positioned on the upstream side is greater than a temperature difference between a zone positioned on a downstream side in the gas flow direction and a zone adjacent to the zone positioned on the downstream side; and supplying the cleaning gas into the process chamber after the act of heating.

Abstract: A technique that includes: a transfer chamber including a transfer space in which a substrate loaded from a substrate accommodation container is transferred; a gas circulation path connecting both ends of the transfer space; a fan in the gas circulation path for circulating atmosphere in the transfer space and the gas circulation path; a loading port through which the substrate is loaded into the transfer space; a side surface opening provided on at least one side surface putting therebetween a side surface of the transfer chamber provided with the loading port, among a plurality of side surfaces forming the transfer chamber, the side surface opening communicating with the transfer space; a door for closing the side surface opening; and a circulation duct movable integrally with the door and provided to constitute the gas circulation path in a state where the door is closed.

Abstract: Described herein is a technique capable of improving a film thickness uniformity on a surface of a wafer whereon a film is formed. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a process gas nozzle configured to supply a process gas into the process chamber; an inert gas nozzle configured to supply an inert gas into the process chamber while a concentration of the process gas at the center of the substrate is higher than a concentration required for processing the substrate; and an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; wherein the process gas nozzle and the inert gas nozzle are disposed beside the edge of substrate with a predetermined distance therebetween corresponding to an angle of circumference of 90 to 180 degrees.

Abstract: A technique includes a process container configured to process a substrate, a storage container which is at least partially in contact with an outer wall of the process container and is configured to store a gas to be supplied into the process container, and a temperature regulator configured to regulate an internal temperature of the storage container.

Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

Abstract: A method of manufacturing a semiconductor device including: (a) loading a substrate into a process chamber; (b) supplying a processing gas including H2O-containing radicals to the substrate; (c) supplying a gas including a halogen element; (d) supplying a gas including one or both of an oxygen element and a nitrogen element after (c); (e) repeating (c) and (d); and (f) repeating (b) and (e).

Abstract: There is provided a technique that includes (a) forming an oligomer-containing layer on a surface of a substrate and in a concave portion of the substrate by allowing an oligomer to be generated, grow, and flow on the surface of the substrate and in the concave portion of the substrate by performing a cycle a predetermined number of times at a first temperature, the cycle including: supplying a precursor gas to the substrate; supplying a first nitrogen- and hydrogen-containing gas to the substrate; supplying a second nitrogen- and hydrogen-containing gas to the substrate; and supplying a first modifying gas to the substrate; and (b) forming a film by performing a thermal treatment to the substrate at a second temperature equal to or higher than the first temperature to modify the oligomer-containing layer so as to be filled in the concave portion.

Abstract: There is provided a technique that includes: forming a film on a substrate including a recess formed on a surface of the substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate; and (b) supplying a reaction gas to the substrate, wherein in (a), the precursor gas is supplied to the substrate separately a plurality of times, and a processing condition under which the precursor gas is supplied for a first time is set to a processing condition under which self-decomposition of the precursor gas is capable of being more suppressed than a processing condition under which the precursor gas is supplied for at least one subsequent time after the first time.

Abstract: According to the present disclosure, the step coverage performance of the film can be improved on the substrate. According to one embodiment of the present disclosure, there is provided a technique that includes: forming a film on a substrate provided with a concave structure on a surface thereof by performing a cycle a predetermined number of times, wherein the cycle includes: (a) supplying a source gas to the substrate from a side of the substrate; and (b) supplying a reactive gas to the substrate, and wherein, in (a), by colliding the source gas with an inner wall of the concave structure, the source gas is decomposed to generate an intermediate substance and the intermediate substance adheres to the inner wall of the concave structure, and wherein, in (b), the intermediate substance adhered to the inner wall of the concave structure reacts with the reactive gas.

Abstract: There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

Abstract: There is provided a technique including: a substrate support including a plurality of first props capable of supporting a plurality of substrates at intervals in an up-down direction; and a partition support including a plurality of partitions and a plurality of second props, the plurality of partitions each having a cut-away portion at which the plurality of first props is disposed, the plurality of partitions being disposed one-to-one in spaces between the plurality of substrates held by the substrate support, the plurality of second props supporting the plurality of partitions.

Abstract: There is provided a technique that includes: performing a cycle a predetermined number of times, the cycle including: (a) forming a first layer on a surface of a first film by supplying a processing agent to a substrate including the first film on a surface of the substrate; and (b) etching the first layer and at least a portion of the first film by supplying an etching agent to the substrate, wherein in (b), when etching the first layer, a substance X that reacts with the etching agent but does not contribute alone to the etching is generated, and the first layer and the at least a portion of the first film are etched by using a mixture of the substance X and the etching agent.

Abstract: A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.

Abstract: Described herein is a technique capable of adjusting an inner pressure of a process chamber into a high vacuum state in a short time. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a main exhaust line including a first pipe, a first opening degree adjusting valve, an opening/closing valve and a pressure sensor; a bypass exhaust line including a second pipe and a second opening degree adjusting valve; and a controller configured to adjust an inner pressure of the process chamber by: (a) adjusting an opening degree of the second opening degree adjusting valve; (b) closing the second opening degree adjusting valve and opening the opening/closing valve and the first opening degree adjusting valve; and (c) closing the opening/closing valve and the first opening degree adjusting valve and adjusting the opening degree of the second opening degree adjusting valve.

Abstract: A technique includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.

Abstract: Included are processes of (a) supplying a film-forming gas into a processing container in which a substrate is accommodated to form a film on the substrate, (b) supplying a fluorine-containing gas into the processing container in which the substrate is not accommodated to remove a deposit including the film adhered to the inside of the processing container, (c) supplying a precoat gas into the processing container in which the substrate is not accommodated and from which the deposit is removed to form a precoat film in the processing container, and (d) supplying a film-forming gas into the processing container in which a substrate is accommodated and in which the precoat film is formed to form a film on the substrate, in which, in (c), a film thickness distribution of the precoat film is adjusted in accordance with a distribution of a residual fluorine concentration in the processing container.

Abstract: There is provided a technique that includes abnormality detecting by picking up a sound generated from a transfer configured to be capable of transporting the substrate and comparing a waveform of sound data with a preset threshold value to detect an abnormality of the transfer; and failure detecting by picking up vibration of the transfer and comparing a waveform of vibration data with a preset threshold value to detect a failure of the transfer.

Abstract: There is provided a technique that includes: (a) supplying a group 14 element-containing gas to a substrate; and (e) performing a cycle a predetermined number of times after (a). The cycle includes: (b) supplying a dopant gas containing a halide of a group 13 element or a group 15 element to the substrate; (c) supplying a first reducing gas to the substrate; and (d) supplying the group 14 element-containing gas to the substrate in this order.

Abstract: There is provided a technique that includes: a first gas supply line configured to supply a first gas to a substrate in a process chamber; a first exhaust line connected to a first pump and exhausting the first gas supplied to the substrate; a first valve installed at the first exhaust line; a second gas supply line configured to supply a second gas to the substrate in the process chamber; a second exhaust line connected to a second pump and exhausting the second gas supplied to the substrate; a second valve installed at the second exhaust line; and a controller capable of controlling the first valve and the second valve, so as to perform a first line change processing of exhausting the first gas supplied to the substrate toward the second pump via the second exhaust line, when determining that the first exhaust line transitioned into a predetermined state.