Abstract: A clamping portion 2 is suspended by wire cables 5. A linkage 3 connects the clamping portion 2 and a contacting portion 4 disposed below the clamping portion 2. One end of a circular-arc member 1 is pivotally supported by a swivel axis 33. The circular-arc member 1 is swiveled by guiding the contacting portion 4 to contact with the shoulder 63 of the crystal body 6.

Abstract: It is an object of the present invention to provide a method for efficiently making semiconductor wafers that prevents the production of metal pollution. It is another object of the present invention to provide a method where the back side of the wafer does not influence the front side, thereof, and where the front and back sides of the wafer can be distinguished are polishing.This invention provides a method for efficiently making semiconductor wafers having uniform thickness where the thickness of the back side does not influence the front side and where the front side of the wafer is capable of being distinguished from the back side. A semiconductor ingot is sliced to obtain wafers. The sliced surfaces of the wafers are flattened. The flattened wafer is etched in alkaline etching solution.

Abstract: A single crystal is pulled to a length at which the beginning of the body of the single crystal is assumed sufficiently to have been cooled down to a temperature below 1000.degree. C.; then the single crystal being pulled is detached from the molten silicon by pulling it at a speed high enough to cut it out from the molten silicon. Then oxygen precipitation heat-treatment is performed on the single crystal to locate the portion of AOP. AOP arises at the boundary of grown-in defects being formed zone while the single crystal passes through 1100.degree. C., and the position is at about 1100.degree. C. immediately before, detaching the single crystal out from the molten silicon. Therefore, the position at temperature 1100.degree. C. in the single crystal immediately before detaching the single crystal out from the molten silicon are known, then the temperature distributions of the single crystal immediately before detaching it out from the molten silicon can be decided easily.

Abstract: The present invention is intended to provide a polishing method for a chamfered portion of a semiconductor silicon substrate, wherein edge relief of an oxidized silicon layer and/or an extrinsic gettering layer, and mirror polishing of chamfered portion can be performed at the same time for the semiconductor silicon substrate having the oxidized silicon layer and/or extrinsic gettering layer on the bottom thereof. The semiconductor silicon substrate is tilted at a designated chamfered angle .theta. with respect to an axis of a buff being mounted in a polishing apparatus to mirror polish the chamfered portion on one side. Then, the semiconductor silicon substrate is reversed, and the mirror polish is performed for the chamfered portion on the other side. A mean diameter of the colloidal silica constituting the polish liquid is 50.about.150 nm, the pH value of the polish liquid is 10.about.11, a specific gravity at 20.degree. C. is 1.about.1.5, and a concentration is 30.about.50 wt %.