Abstract: The present invention provides a method and a device capable of manufacturing spherical semiconductor crystals continuously without contamination. A bar-shaped semiconductor material 64a is connected to a supporting member (wire 50) and descends at a preset speed. The bar-shaped semiconductor material 64a is preheated by the preheating portion 56c of a heater 56 to a predetermined temperature. Afterward, the preheated bar-shaped semiconductor material 64a further descends, and the surface of the semiconductor material melts through heating of the melting portion 56d of the heater 56 to form liquid drops 64b. The liquid drops 64b accumulate at the lower end of the bar-shaped semiconductor material 64a and drop down by their own weights. The liquid drops 64b cool down during free fall and become solid spherical semiconductor crystals 64c without deformation. An impact absorbing material 62 absorbs the impact of the falling spherical semiconductor crystals 64c and retains them.