Abstract: A lift pin passes through a hole of a susceptor on which a wafer is placed inside a process chamber in which an epitaxial process is performed with respect to the wafer, to support the wafer, and has a surface formed of a glassy carbon material.

Abstract: According to an aerosol coating method, a heat treatment process of preliminary ceramic particles having a first mean particle size (D50) is performed to form ceramic particles having a second mean particle size (D50) in micro unit larger than the first mean particle size. Thereafter, the ceramic particles are mixed with a carrier gas to form an aerosol. The aerosol is sprayed toward the base to form a ceramic coating film on the base.

Abstract: An internal member for an apparatus of depositing a conductive thin film includes a chamber structure including a object supporting unit supporting an object on which the conductive thin film is to be deposited, and a target supporting unit supporting a target for depositing the conductive thin film on the object, wherein the target including a first metal material the chamber structure having a reaction space therein and a coating structure formed on an inner surface of the chamber structure, the inner surface being indirectly exposed to the reaction space of the chamber structure via the coating structure, and the coating structure including a second metal material having at least one metal element in the first metal material.

Abstract: A lift pin passes through a hole of a susceptor on which a wafer is placed inside a process chamber in which an epitaxial process is performed with respect to the wafer, to support the wafer, and has a surface formed of a glassy carbon material.

Abstract: An internal member for an apparatus of depositing a conductive thin film includes a chamber structure including a object supporting unit supporting an object on which the conductive thin film is to be deposited, and a target supporting unit supporting a target for depositing the conductive thin film on the object, wherein the target including a first metal material the chamber structure having a reaction space therein and a coating structure formed on an inner surface of the chamber structure, the inner surface being indirectly exposed to the reaction space of the chamber structure via the coating structure, and the coating structure including a second metal material having at least one metal element in the first metal material.

Abstract: Provided is a method of fabricating and repairing ceramic components for semiconductor fabrication, through which erosion and polymer deposition occurring on ceramic components for semiconductor fabrication are decreased by modifying the dielectric surface of a component having an electrical insulation characteristic so that the ceramic components can be repaired after being used. The method includes activating a surface layer of a component, which is manufactured by sintering a ceramic, and depositing a dielectric coating layer on the surface layer of the ceramic component using a plasma spray process; when the dielectric coating layer is damaged as the ceramic component is used for semiconductor fabrication, removing the dielectric coating layer; and repairing the ceramic component by depositing a dielectric coating layer on the surface layer of the ceramic component from which the damaged dielectric coating layer has been removed.