Abstract: The present invention provides a photoplasma etching device and a method of manufacturing the same, and more particularly to a member for a plasma etching device, which is improved in plasma resistance through deposition of a rare-earth metal thin film and surface heat treatment and the optical transmittance of which is maintained, thus being useful as a member for analyzing the end point of an etching process, and a method of manufacturing the same.

Abstract: Disclosed is an aerosol-deposition-coating method for plasma-resistant coating, in which the inside of a processing device can be protected from plasma during a plasma-etching process, the roughness of a coating layer on a metal substrate can be decreased to thereby reduce the generation of particles, and adhesion between the coating layer and the metal substrate can be enhanced.

Abstract: A particle measuring device includes a probe including a nozzle spraying a gas on a surface of an object and an inlet inhaling the gas and particles scattered from the surface by the gas; a main pipe including an inflow hole through which the gas flows and a discharge hole through which the gas is discharged; a first manifold provided to connect the main pipe to the nozzle, and supplying the gas to the nozzle; a second manifold provided to connect the main pipe to the inlet between a connecting portion of the first manifold and the discharge hole, and supplying the particles and the gas to the main pipe; a third manifold branched from the second manifold and supplying the particles and the gas; and a particle counter connected to the third manifold, and counting the particles included in the gas supplied through the third manifold.

Abstract: Proposed is a method for manufacturing a spherical YOF-based powder. Specifically, proposed is a method for manufacturing a spherical YOF-based powder. The YOF-based powder injected into the plasma jet and melted into the refrigerant in a droplet state is sprayed and quenched, thereby improving density and controlling the component ratio through particle spheroidization.

Abstract: The present disclosure relates to an yttrium-based granular powder for thermal spraying. More particularly, the yttrium-based granular powder is a mixture including one or more yttrium compound powders selected from among Y2O3, YOF, YF3, Y4Al2O9, Y3Al5O12, and YAlO3, and a silica (SiO2) powder. A Y—Si—O intermediate phase is included therein in a content of less than 10 wt %. The thermal spray coating manufactured using the same has a low porosity, and forms a very dense thin film, thus ensuring excellent plasma resistance.

Abstract: Proposed is an yttrium-based granular powder for thermal spraying. The yttrium-based granular powder includes at least one yttrium compound powder selected from the group consisting of Y2O3, YOF, YF3, Y4Al2O9, Y3Al5O12, and YAlO3, and a silica (SiO2) powder. The yttrium-based granular powder is prepared by mixing the yttrium compound powder having a mean grain diameter of 50 nm to 900 nm and the silica powder having a mean grain diameter of 50 nm to 900 nm. The yttrium-based granular powder includes less than 10 wt % of a Y—Si—O mesophase. A thermal spray coating produced using the yttrium-based granular powder can exhibit low porosity, high density, and excellent plasma resistance.

Abstract: A ground structure for a PECVD apparatus includes a ground connector is positioned in a receiving portion of a ground mount that is connected to an electrical reservoir. A cylindrical ground clamp holds the ground connector and includes an opening portion along a sidewall in a longitudinal direction. An outer surface of the ground connector makes contact with an inner surface of the ground clamp. A pair of stumbling portions are folded from an outer surface of the ground clamp and spaced apart from each other by a width of the opening portion. A ground wiring is connected to the ground clamp and the ground mount, and the ground current flows to the ground mount via the ground clamp by the ground wiring, thus the ground current is grounded to the electrical reservoir. Accordingly, the electric arc is prevented between the ground connector and the ground clamp.

Abstract: In a method of manufacturing a multilayer ceramic substrate, first and second sheet stacks are formed by pressurizing a plurality of unsintered ceramic sheets, respectively. A hole is formed to penetrate through the second sheet stack. A third preliminary sheet stack is formed by positioning the second sheet stack on the first sheet stack. First and second thin films are formed at top and bottom of the third preliminary sheet stack, respectively. A third sheet stack is formed by pressurizing the first and the second thin films and the third preliminary sheet stack. The first and the second thin films are removed from the third sheet stack, thereby forming a preliminary multilayer ceramic substrate. The preliminary multilayer ceramic substrate is sintered. Accordingly, the reliability and stability of the manufacturing process for the multilayer ceramic substrate is sufficiently improved with reduced cost due to the flat molds and thin films.

Abstract: An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce contamination of the substrate and includes the same material as that of the substrate.

Abstract: An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce contamination of the substrate and includes the same material as that of the substrate.

Abstract: Disclosed is a method for preparing a high dense aluminum nitride (AlN) sintered body. The method includes the steps of preparing powders for the AlN sintered body comprising Y2O3 of 0.1 to 15 wt %, TiO2 of 0.01 to 5 wt % and MgO of 0.1 to 10 wt %, and obtaining the AlN sintered body with a volume resistivity of 1×1015 ?cm or more at a normal temperature and a relative density of 99% or more. The sintered body is obtained by sintering the powders and then cooling the sintered powders or sintering the powders and then cooling the sintered powders with annealing the sintered powders during the cooling.

Abstract: The present invention provide a high dense aluminum nitride sintered body, a preparing method thereof, and a member for manufacturing semiconductor using the sintered body which has excellent leakage current characteristic, enough adsorbing property, good detachment property and excellent thermal conductivity and so can be applied to even a member for manufacturing semiconductor requiring high volume resistivity like the coulomb type electrostatic chucks as well as the Johnsen-Rahbek type electrostatic chucks.

Abstract: The present invention provide a high dense aluminum nitride sintered body, a preparing method thereof, and a member for manufacturing semiconductor using the sintered body which has excellent leakage current characteristic, enough adsorbing property, good detachment property and excellent thermal conductivity and so can be applied to even a member for manufacturing semiconductor requiring high volume resistivity like the coulomb type electrostatic chucks as well as the Johnsen-Rahbek type electrostatic chucks.

Abstract: Provided is a substrate holder including a susceptor having edge protrusion formed on edge thereof and an electrostatic chuck mounted inside the edge protrusion and on the susceptor. The electrostatic chuck is attached to the susceptor by a gel adhesive sheet containing a plurality of wires and a silicon or corrosion-resistant epoxy based material is filled between the electrostatic chuck and the edge protrusion. The planarity of the electrostatic chuck can be maintained accurately when the electrostatic chuck is attached to the susceptor and clogging of cooling gas supply holes and leakage of cooling gas through a space between the electrostatic chuck and the susceptor can be prevented.