Abstract: An antenna arrangement comprises a patch conductor (102) having a feed conductor (106) connected to a first point and a grounding conductor (108) connected between a second point and a ground plane (104). An example of such an arrangement is a conventional planar inverted-F antenna. A problem with such antennas is that their impedance is inductive, making them difficult to feed. The present invention incorporates a slot (702) in the patch conductor (102) between the first and second points, which enables the inductive component of the antenna's impedance to be substantially reduced. Suitable positioning of the slot (702) on the patch conductor (102) also enables an impedance transformation to be achieved. The antenna described above may have a substantially reduced volume compared with known planar antennas with minimal reduction in performance.

Abstract: A method of manufacturing an active matrix substrate (1) comprising a row and column array of active elements (10) wherein each element (11) is associated with a TFT (13) having a gate electrode (306) connected to a corresponding row conductor (15) and source (320) and drain (321) electrodes connected to corresponding column conductors (14), and ESD protective circuitry (20) connected to at least one of the row conductors for protecting the TFTs against electrostatic discharge (ESD). The method comprising the steps of forming semiconductor regions of the TFTs (302) and the ESD protective circuitry (303); depositing gate electrodes (306) of the TFTs and corresponding row conductors (15); and depositing source (320) and drain (321) electrodes of the TFTs and corresponding column conductors (14), wherein the ESD protective circuitry (20) is operative to control ESD prior to deposition of the column conductors (14).

Abstract: A radio device includes a receiving part (45) formed by a high-frequency selective amplifier stage (50) including a frequency selective circuit (51) having a plurality of capacitive elements (68-78), any one or more which can be selectively connected into the selective circuit in dependence on a control magnitude stored in a storage element (90) in order to tune the selective circuit to a certain frequency. Under the control of a microprocessor (92) the stored control magnitude is set to that which gives the best level measured by a level detector (98) at the output of the amplifier stage. The microprocessor varies the control magnitude to produce a series of alternate connections into the selective circuit of each and every combination of one or more of the reactive elements, receives the measurement by the level detector of the level at the output of the amplifier stage or each control magnitude, and selects the control magnitude giving the best level.