Abstract: Devices and methods for junction formation in manufacturing a semiconductor device are disclosed. The devices have shallow junction depths far removed from end-of range defects. The method comprises forming an amorphous region in a crystalline semiconductor such as silicon down to a first depth, followed by implantation of a substitutional element such as carbon to a smaller depth than the first depth. The region is then doped with suitable dopants, e.g. phosphorus or boron, and the amorphous layer recrystallized by a thermal process.
Type:
Application
Filed:
August 3, 2007
Publication date:
March 6, 2008
Applicants:
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC), KONINKLIJKE PHILIPS ELECTROONICS
Abstract: A television receiver (1) has input circuitry (2) including tuners (3 and 4), hard disk unit HDD (5), all of which can input to demultiplex unit (6) and to the television monitor (7). A Picture-in-Picture facility is provided for specified channels for example with a common channel provider or with channels of related subject matter.