Abstract: The present invention relates to a method and apparatus for generating a model used to estimate the quality of input-video data. The apparatus is configured to obtain a plurality of average subjective scores from a plurality of sample video data, and a plurality of image metrics for each of the plurality of said average subjective scores is calculated. Some of the plurality of said image metrics is converted into corresponding, perceived quality metrics, then an image-quality metric is predicted based on the calculated quality metrics and the perceived quality metrics.

Abstract: An ultrasound system is described which can be turned off quickly and restarted to be ready for scanning in a matter of seconds. This is accomplished by allowing a processor and/or memory within the system to remain active even when the system is “turned off.” When the system is turned off the state of the system is minimally preserved in either volatile or nonvolatile memory so that the system can quickly restart without having to sequence through an entire bootup procedure.

Abstract: A switching circuit for switching an input dc voltage of predetermined polarity is used, for example, for a synchronous dc-dc converter. The switching circuit is divided between a high side package (52) and a low side package (56) each having a logic input (90) and a switch (6,8) connected between switching outputs (84,86). The switching outputs (84,86) of the high and low side packages (52,56) are connected in series between input voltage terminals (4,2). A pulse width modulator (18) is connected to the logic inputs (90) of the packages for supplying an alternating control signal for switching the high and low side switches (6,8) alternately. Each of the high and low side packages (52,56) contains logic circuitry (150) for controlling the respective switch (6,8) based solely on the voltages on the respective logic input (90) and respective switching outputs (84,86) to prevent the switches (6,8) in the high and low side packages (52,56) from conducting at the same time.

Abstract: A field effect transistor (T) of the (quasi-)vertical type, which means that in the semiconductor body (10) of the transistor (T), a source (1) and a drain (3) are positioned (approximately) above each other and are separated from each other by the channel region (2), which is connected to a gate region (4), each one of said regions being connected to a connection conductor (6, 7, 11) joining a connection region (7, 8, 12). The connection regions (7, 8) of the source (1) and the gate (4) are situated on top of the semiconductor body (10). The semiconductor body (10) is provided with a through-hole (9) at least one wall of which is covered with a conductive layer (11), which is connected to the drain (3), and which forms the connection conductor (11) of the drain (3) and which is connected to the connection region (12) for the drain (3) situated on top of the semiconductor body (10). In this way, the transistor (T) is very well suited for surface mounting and is also very easy to manufacture.