Abstract: A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises the steps of depositing and patterning a disposable layer, depositing a first barrier layer on top of the patterned disposable layer, depositing a metal layer, planarizing the metal layer, depositing a second barrier layer, planarizing the second barrier layer until substantially no barrier layer material is present on top of the disposable layer, depositing a permeable layer, removing the disposable layer through the permeable layer to form air gaps.
Type:
Grant
Filed:
March 16, 2005
Date of Patent:
March 31, 2009
Assignees:
Interuniversitair Microelektronica Centrum (IMEC), Koninklikje Phillips Electronics