Abstract: A stress concentrating apparatus and a method for a MicroElectroMechanical System (MEMS) sensors is provided. The apparatus includes a plate having an inner region and outer region, the inner region being separated from the outer region by slits defined in the plate. A stress concentrator bridge connects the inner region to the outer region, and to mechanically amplify stress applied on the inner region of the plate. At least one stress sensor is operatively connected to the stress concentrator bridge, whereby the at least one stress sensor converts the mechanically amplified stress applied on the inner region into an electrical signal.

Abstract: A charge pump circuit for biasing a capacitive transducer. The charge pump circuit includes a plurality of parallel arranged transistor-capacitor units each having a bipolar junction transistor with a collector terminal connected to a base terminal and an emitter terminal connected to a capacitor. The charge pump circuit also includes drive circuitry for driving the transistor-capacitor units at a predetermined rate, as well as load current circuitry connected to a last transistor-capacitor unit and configured to determine a load current through the transistor-capacitor units in order to establish a controllable voltage drop across the transistor-capacitor units. Also included is supply circuitry configured to supply the transistor-capacitor units and drive circuitry, the supply circuitry configured to bias a base-emitter voltage of the transistor-capacitor units proportional to the load current so that an output voltage of the charge pump is substantially independent of temperature fluctuations.

Abstract: Provided is circuitry for biasing a transistor amplifier with a DC-voltage signal, the transistor amplifier having a first input terminal, a second input terminal, and an output terminal coupled to the second input terminal. The circuitry includes a sensor capacitor connected to the first input terminal and an impedance transistor arranged in parallel with said capacitor, the transistor and capacitor forming a low-pass filter. The circuitry also includes a biasing circuit configured to controllably vary a DC-voltage signal for operatively biasing the amplifier, the biasing circuit including a cascaded current arrangement configured to subdivide a reference current into smaller currents for selectively generating voltage potentials for biasing the impedance transistor to adjustably filter a noise component of the DC-voltage signal via the low-pass filter before the DC-voltage signal is provided to the first input terminal.

Abstract: A biasing circuit adapted for operative coupling to the first input terminal so as to provide a relatively high biasing impedance to ground at the first input terminal, said biasing circuit being adapted to controllably vary the DC-voltage signal which biases the transistor amplifier, whilst at least one component of the biasing circuit is configured to simultaneously form a low-pass circuit for filtering a noise component of the DC-voltage signal before the DC-voltage signal is provided to the first input terminal.

Abstract: A device for use in biasing a transistor amplifier with a DC-voltage signal, the transistor amplifier including: a first input terminal; a second input terminal; and an output terminal coupled to the second input terminal; wherein said device includes: a biasing circuit adapted for operative coupling to the first input terminal so as to provide a relatively high biasing impedance to ground at the first input terminal, said biasing circuit being adapted to controllably vary the DC-voltage signal which biases the transistor amplifier, whilst at least one component of the biasing circuit is configured to simultaneously form a low-pass circuit for filtering a noise component of the DC-voltage signal before the DC-voltage signal is provided to the first input terminal.