Abstract: A vehicle key capable of generating electrical energy by itself through energy harvesting, and a method of manufacturing the vehicle key are provided. The vehicle key includes a power generator including an energy generation module configured to generate electrical energy using energy harvesting and an electric condenser configured to store the generated electrical energy; an inputter configured to receive a user input; a communicator configured to communicate with the vehicle; and a controller configured to control the communicator to transmit a control signal corresponding to the received user input to the vehicle. At least one of the inputter, the communicator, and the controller may be configured to receive power from the power generator.

Abstract: The mixing device of cell printing composition according to the present disclosure comprises a first syringe comprising a first container for containing first liquid, a first moving element discharging the first liquid contained in the first container; a second syringe comprising a second container for containing second liquid, a second moving element discharging the second liquid contained in the second container; a mixing container which comprises a rotating mixing unit and receives the discharged first liquid and the discharged second liquids; a power transmission unit for driving the first moving element, the second moving element and the mixing unit; a first threaded guide where the first moving element is movably connected; a second threaded guide where the second moving element is movably connected; and a rod for rotating the mixing unit.

Abstract: A vertical type light emitting diode includes a nitride semiconductor having a p-n conjunction structure with a transparent material layer formed on a p type clad layer, the transparent material layer having a refractive index different from that of the p type clad layer and having a pattern structure of mesh, punched plate, or one-dimensional grid form, etc. A reflective metal electrode layer is formed on the transparent material layer as a p-electrode. A stereoscopic pattern is formed in the transparent material layer and the p-electrode deposited, and thereby forming the pattern in the p-electrode. Depositing the p-electrode on only 10 to 70% of the upper portion of the p type clad layer in an ultraviolet ray light emitting diode such that an area where the p type clad layer is exposed is wide increases the transmittance of ultraviolet rays through an area where the p-electrode is not deposited.

Abstract: A muscular strength enhancing robot to be driven by an intention of a user and a method of driving the robot are disclosed. The robot includes an actuator attached to a portion of a body of the user and configured to be actuated by enhancing a muscular strength, an encoder connected to the actuator and configured to measure an actual velocity at which the actuator moves, a force or torque sensor configured to measure an intensity of a force to be applied, an admittance modeling module configured to calculate a target velocity using the intensity of the force, and a proportional integral derivative (PID) control module configured to control actuation of the actuator in proportion to a velocity difference between the target velocity and the actual velocity, control the actuation by a cumulative value of the velocity difference, and control the actuation by a difference between a previous and a current velocity difference.

Abstract: A vertical type light emitting diode includes a nitride semiconductor having a p-n conjunction structure with a transparent material layer formed on a p type clad layer, the transparent material layer having a refractive index different from that of the p type clad layer and having a pattern structure of mesh, punched plate, or one-dimensional grid form, etc. A reflective metal electrode layer is formed on the transparent material layer as a p-electrode. A stereoscopic pattern is formed in the transparent material layer and the p-electrode deposited, and thereby forming the pattern in the p-electrode. Depositing the p-electrode on only 10 to 70% of the upper portion of the p type clad layer in an ultraviolet ray light emitting diode such that an area where the p type clad layer is exposed is wide increases the transmittance of ultraviolet rays through an area where the p-electrode is not deposited.

Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.

Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device with reduced defect density and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The manufacturing method is a method for manufacturing a semiconductor device, in which a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The sapphire substrate is etched to form uneven patterns, and the template layer including a nitride semiconductor layer and a GaN layer is formed on the sapphire substrate in which the uneven patterns are formed.

Abstract: A method of processing an image signal includes: converting a source image signal into an image signal corresponding to a color space for a color gamut mapping; reducing a color gamut of the image signal; and mapping the image signal corresponding to colors within the reduced color gamut into an image signal corresponding to colors within a display color gamut, wherein the colors of the display color gamut are displayed by a display panel.

Abstract: A method for measuring critical current density of superconductor wires according to the present invention is characterized in that it includes: (a) applying an external magnetic field to the superconductor wires, (b) measuring a magnetization loss of the superconductor wires according to the application of the external magnetic field, (c) normalizing the measured magnetization loss, and then calculating a fully-penetration magnetic field of the superconductor wires according to the normalized magnetization loss, (d) calculating a critical current density of the superconductor wires according to the calculated fully-penetration magnetic field. Therefore, the critical current density of parallel superconductor wires such as stacked superconductor wires may be measured without applying current to the superconductor wires directly.

Abstract: Disclosed are a fast handover system and a method thereof. The fast handover method can include: allowing a mobile node (MN) to transmit a handover information message to a previous mobile access gateway (PMAG); allowing the PMAG to transmit a fast proxy binding update (FPBU) message to a local mobility anchor (LMA) on the basis of the handover information message received from the MN; allowing the LMA to transmit a handover initiation (HI) message including MN-ID and proxy-care-of address (CoA) of the PMAG to a new MAG (NMAG); transmitting a position update message to the NMAG if the MN is attached to a target BS that is connected to the NMAG; and allowing the NMAG to deliver a buffered packet to the MN.

Abstract: An interface device for an emulator is disclosed. The interface device includes a connection unit, a transmission unit, and an interface unit. The connection unit receives data, to be used to emulate a logic, from a host computer, and transmits result data, output from the logic, to the host computer. The transmission unit receives the data from the connection unit and stores (writes) the data in the first area of a register array. If the result data is stored in the second area of the register array, the transmission unit reads the result data and transmits the result data to the connection unit. The interface unit includes at least one register array, outputs a clock, set using the data stored in the first area, to the logic, and stores the result data, output from the logic, in the second area.

Abstract: Fast encoding method and system are provided which can transmit video data in real time using adaptive intra prediction in accordance with the H.264/AVC (Advanced Video Codec) standard so as to efficiently provide security-related images or multimedia images in various network environments with high quality. An intra prediction method of compressing and encoding an image includes the steps of: comparing an SAD value C calculated from macro block data of a present frame and a previous frame with a reference value K to determine a prediction method; and selectively performing on input macro block data a first method of determining a best mode and a block size by prediction in a plurality of prediction modes based on spatial directivity and generating prediction data and a second method of generating prediction data using the best mode and the block size used in the previous frame, depending on the determined prediction method.

Abstract: A method of processing an image signal includes: converting a source image signal into an image signal corresponding to a color space for a color gamut mapping; reducing a color gamut of the image signal; and mapping the image signal corresponding to colors within the reduced color gamut into an image signal corresponding to colors within a display color gamut, wherein the colors of the display color gamut are displayed by a display panel.

Abstract: Provided is a multiple transposition method for superconducting wire, by making each superconducting wire unit from second-generation superconducting wires that were firstly transposed and then transposing each superconducting wire unit in such a manner that the phase of each unit can be changed along the length, comprising preparing wires by making curves on superconducting wires in such a manner that the superconducting wires of a thin multiple layer grown epitaxially are slit in zigzags and then making the curves repeatedly and by machining the wires with a desired length; making first-transposed superconducting wire units by combining a plurality of the prepared wires such that curves of adjacent wires come in touch to each other and are superposed; preparing a superconducting wire unit bundle by arranging the first-transposed superconducting wires units and by locating a plurality of the first-transposed superconducting wire units in parallel along the length; and making a second transposition on the fir

Abstract: The present invention relates to a superconducting power transforming apparatus. The superconducting power transforming apparatus according to the present invention comprises a transformer housing having a transforming cable passing hole and filled with a liquid cooling means; a superconducting transformer housed in the transformer housing in a state that the superconducting transformer is immersed in the liquid cooling means; a tap changer housing having a tap changing cable passing hole and vacuum-sealed from outside; a power tap changer housed in the vacuum tap changer housing; and a cable linking pipe vacuum-sealed from the transformer housing and the tap changer housing, and linking the transforming cable passing hole with the tap changing passing hole in order that a transformer winding tap cable connecting the superconducting transformer and the power tap changer passes through.

Abstract: A method for measuring critical current density of superconductor wires according to the present invention is characterized in that it includes: (a) applying an external magnetic field to the superconductor wires, (b) measuring a magnetization loss of the superconductor wires according to the application of the external magnetic field, (c) normalizing the measured magnetization loss, and then calculating a fully-penetration magnetic field of the superconductor wires according to the normalized magnetization loss, (d) calculating a critical current density of the superconductor wires according to the calculated fully-penetration magnetic field. Therefore, the critical current density of parallel superconductor wires such as stacked superconductor wires may be measured without applying current to the superconductor wires directly.

Abstract: The present invention relates to a method for fabricating a filament type high-temperature superconducting wire in which a thin film type high-temperature superconducting wire is fabricated into a filament shape suitable for use with alternating current.

Abstract: Disclosed is the structure of a persistent current switch and a control method for the same. In the switch structure, a portion of a superconducting wire to be used as a switch is formed with slits such that the flow of current is controlled by the switch, to facilitate a transition between the superconducting state and the normal state of the superconducting wire. The structure of the persistent current switch includes a first slit longitudinally extending from a first point on one end of a superconducting wire to a second point and from a third point to a fourth point, the second, third, and fourth points being arranged sequentially in a longitudinal line, and second and third slits provided at opposite sides of a region between the second point and the third point where no first slit exists.

Abstract: Provided is a multiple transposition method for superconducting wire, by making each superconducting wire unit from second-generation superconducting wires that were firstly transposed and then transposing each superconducting wire unit in such a manner that the phase of each unit can be changed along the length, comprising preparing wires by making curves on superconducting wires in such a manner that the superconducting wires of a thin multiple layer grown epitaxially are slit in zigzags and then making the curves repeatedly and by machining the wires with a desired length; making first-transposed superconducting wire units by combining a plurality of the prepared wires such that curves of adjacent wires come in touch to each other and are superposed; preparing a superconducting wire unit bundle by arranging the first-transposed superconducting wires units and by locating a plurality of the first-transposed superconducting wire units in parallel along the length; and making a second transposition on the fir

Abstract: A noncontact method for measuring currents flowing through superconductive wires connected in parallel is provided.