Patents Assigned to Korea University Foundation
  • Patent number: 8852761
    Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.
    Type: Grant
    Filed: April 29, 2013
    Date of Patent: October 7, 2014
    Assignee: Korea University Foundation
    Inventors: Young Keun Kim, You-Song Kim, Byong-Sun Chun, Seung-Youb Han, Jang-Roh Rhee
  • Patent number: 8557337
    Abstract: Provided are magnetic core-ceramic shell (e.g., magnetite (Fe3O4) core-calcium phosphate (Ca3(PO4)2) shell) nanocrystals with high crystallization degree, uniform size, and high chemical stability and a method for synthesizing the same. A core-shell structure is synthesized in a process of forming magnetite seeds corresponding to cores by the reduction of magnetite precursors and then, sequentially, coating the magnetite with Ca3(PO4)2 by the reduction of Ca3(PO4)2 precursors.
    Type: Grant
    Filed: January 4, 2008
    Date of Patent: October 15, 2013
    Assignee: Korea University Foundation
    Inventors: Young Keun Kim, Hong Ling Liu, Jun Hua Wu, Ji Hyun Min, You Song Kim
  • Publication number: 20130244058
    Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.
    Type: Application
    Filed: April 29, 2013
    Publication date: September 19, 2013
    Applicant: Korea University Foundation
    Inventors: Young Keun Kim, You-Song Kim, Byong-Sun Chun, Seung-Youb Han, Jang-Roh Rhee
  • Patent number: 8431256
    Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.
    Type: Grant
    Filed: May 10, 2007
    Date of Patent: April 30, 2013
    Assignee: Korea University Foundation
    Inventors: Young Keun Kim, You-Song Kim, Byong-Sun Chun, Seung-Youb Han, Jang-Roh Rhee
  • Patent number: 7910164
    Abstract: Provided are bifunctional magnetic core-semiconductor shell nanoparticles and a manufacturing method thereof. The method includes mixing magnetic core material precursors and a reducing agent for the core material precursors; preparing a first mixture solution; heating and cooling the first mixture solution and preparing magnetic core materials; mixing the magnetic core materials with semiconductor shell material precursors and a reducing agent for the semiconductor shell material precursors; preparing a second mixture solution; and heating and cooling the second mixture solution and coating the magnetic core materials with the semiconductor shell materials.
    Type: Grant
    Filed: September 24, 2007
    Date of Patent: March 22, 2011
    Assignee: Korea University Foundation
    Inventors: Young Keun Kim, Hong Ling Liu, Jun Hua Wu, Ji Hyun Min, Ju Hun Lee
  • Publication number: 20080210899
    Abstract: Provided are magnetic core-ceramic shell (e.g., magnetite (Fe3O4) core-calcium phosphate (Ca3(PO4)2) shell) nanocrystals with high crystallization degree, uniform size, and high chemical stability and a method for synthesizing the same. A core-shell structure is synthesized in a process of forming magnetite seeds corresponding to cores by the reduction of magnetite precursors and then, sequentially, coating the magnetite with Ca3(PO4)2 by the reduction of Ca3(PO4)2 precursors.
    Type: Application
    Filed: January 4, 2008
    Publication date: September 4, 2008
    Applicant: Korea University Foundation
    Inventors: Young Keun Kim, Hong Ling Liu, Jun Hua Wu, Ji Hyun Min, You Song Kim
  • Publication number: 20080124582
    Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.
    Type: Application
    Filed: May 10, 2007
    Publication date: May 29, 2008
    Applicant: KOREA UNIVERSITY FOUNDATION
    Inventors: Young Keun Kim, You-Song Kim, Byong-Sun Chun, Seung-Youb Han, Jang-Roh Rhee
  • Publication number: 20080075957
    Abstract: Provided are bifunctional magnetic core-semiconductor shell nanoparticles and a manufacturing method thereof. The method includes mixing magnetic core material precursors and a reducing agent for the core material precursors; preparing a first mixture solution; heating and cooling the first mixture solution and preparing magnetic core materials; mixing the magnetic core materials with semiconductor shell material precursors and a reducing agent for the semiconductor shell material precursors; preparing a second mixture solution; and heating and cooling the second mixture solution and coating the magnetic core materials with the semiconductor shell materials.
    Type: Application
    Filed: September 24, 2007
    Publication date: March 27, 2008
    Applicant: KOREA UNIVERSITY FOUNDATION
    Inventors: Young Kim, Hong Liu, Jun Wu, Ji Min, Ju Lee
  • Publication number: 20070295603
    Abstract: Provided is a method of manufacturing a nanoplate diamond. In the method, nanotemplates having a plurality of holes are provided, and nanoplate diamonds are formed in the holes of the nanotemplate using an electrochemical method. After that, the nanotemplate is removed to separate the nanoplate diamonds from it.
    Type: Application
    Filed: February 26, 2007
    Publication date: December 27, 2007
    Applicant: KOREA UNIVERSITY FOUNDATION
    Inventors: Young Kim, Ju Lee, Jun-Hua Wu, Hong-Ling Liu, Ji Cho, Ji Min
  • Patent number: 7311860
    Abstract: The present invention relates to 1,3,5-tricyano-2,4,6-tris(vinyl)benzene derivatives and method for preparing the same. The 1,3,5-tricyano-2,4,6-tris(vinyl)benzene derivatives can be prepared by refluxing 1,3,5-tricyanomesitylene with N-formylamine dimethylacetal or substituted benzaldehyde, or by the Wittig reaction of 1,3,5-tricyano-2,4,6-tris[(diethoxyphosphoryl)methyl]benzene with substituted benzaldehyde. The 1,3,5-tricyano-2,4,6-tris(vinyl)benzene derivatives exhibit large first hyperpolarizability in solution and significant second harmonic generation (SHG) in the powder state, and are useful as optical devices such as electro-optic modulators, optical switch, or the like for treating optical signal in optical communication industry.
    Type: Grant
    Filed: February 28, 2002
    Date of Patent: December 25, 2007
    Assignee: Korea University Foundation
    Inventors: Bong-Rae Cho, Seung-Joon Jeon, Min-Haeng Cho
  • Patent number: 7304359
    Abstract: A magnetic tunnel junction (MTJ) structure for a magnetic random access memory (MRAM) is provided. Specifically, an MTJ structure with an amorphous CoFeSiB or NiFeSiB free layer is provided. The free layer is a CoFeSiB single layer, a NiFeSiB single layer, a CoFeSiB/Ru/CoFeSiB SAF layer, or a NiFeSiB/Ru/NiFeSiB SAF layer.
    Type: Grant
    Filed: September 30, 2005
    Date of Patent: December 4, 2007
    Assignee: Korea University Foundation
    Inventors: Young-Keun Kim, Byong-Sun Chun, Jang-Roh Rhee, Jae-Youn Hwang
  • Patent number: 7193823
    Abstract: The present invention relates generally to the magnetic information storage technology, and particularly, to magnetic recording disc drives including a sensor having a giant magnetoresistance (GMR) based spin valve structure or a tunneling magnetoresistance(TMR) based tunnel junction magnetoresistance structure or magnetic random access memory device including a magnetic memory element(corresponding to a capacitor of DRAM) having a giant magnetoresistance (GMR) based spin valve structure or a tunneling magnetoresistance(TMR) based tunnel junction magnetoresistance structure. More particularly, the present invention relates to a spin valve magnetoresistive structure employed in the sensor of magnetic recording disc drive or tunnel junction magnetoresistive structure employed in the magnetic storage element of magnetic random access memory device.
    Type: Grant
    Filed: June 2, 2003
    Date of Patent: March 20, 2007
    Assignee: Korea University Foundation
    Inventors: Young Keun Kim, Jeong-Suk Park, Seong-Rae Lee
  • Patent number: 7048955
    Abstract: The present invention relates to soybean phosphopeptide calcium and method for producing thereof, wherein the soybean phosphopeptide calcium is produced by calcium-binding reaction of soybean phosphopeptides which are obtained from hydrolysis with hydrolase followed by chemical phosphorlyation of soybean protein using polyphosphate salts or inversely from the procedure of chemical phosphorlyation before hydrolysis with hydrolases. The optimum conditions for the sequential reactions of enzymatic hydrolysis, phosphorylation and calcium binding were established. The soybean phosphopeptide calcium has a high solubility in water and an efficient absorption rate of calcium in a living body.
    Type: Grant
    Filed: December 12, 2002
    Date of Patent: May 23, 2006
    Assignee: Korea University Foundation
    Inventors: Sangyun Choi, Shinhee Lee, Jungik Yang