Abstract: The present invention provides methods for manufacturing field emitter arrays on a silicon-on-insulator (SOI) wafer, one of which comprising steps of forming a doped silicon layer by doping a dopant on a single crystalline silicon layer of an SOI wafer; making a buffer oxide layer on the doped silicon layer; making a stripe pattern of silicon nitride on the buffer oxide layer; etching the buffer oxide layer using the stripe pattern as a mask; etching the doped silicon layer anisotropically using the stripe pattern as a mask; making a minute mask pattern of silicon nitride on the buffer oxide layer by patterning the stripe pattern of silicon nitride; selectively oxidizing the upper part of the doped silicon layer to form an oxide layer except on the portions under the mask pattern; etching away the mask pattern of silicon nitride and the buffer oxide layer deposited under the mask pattern; etching away the exposed doped silicon layer for making gate holes of undercut shape; forming metal layers on the SOI wafe

Abstract: The present invention is directed to fabricating a MOSFET-controlled FEA, in which the emitter array and the cathode electrode are separated and connected to each other by a MOSFET, the cathode electrode and the n-well beneath the emitter array thereby being used as a source and a drain of the MOSFET.

Abstract: A method for preparing spherical phosphor particles is disclosed, wherein a precursor solution of phosphors is decomposed to solid particles by aerosol pyrolysis and rapid cooling and subsequently the solid particles are heat-treated at a temperature of 1000.degree. C. to 1600.degree. C. for a period of 1 hour to 9 hours.