Abstract: A stacked semiconductor device has three-dimensional alternate layers of iconductor elements and insulating layers each electrically insulating the adjacent upper and lower layers of semiconductor elements, formed on a single crystal semiconductor substrate. A semiconductor is deposited in openings formed respectively in the insulating layers to form single crystal semiconductor layers each having the same crystal axis as the single crystal semiconductor substrate respectively over the insulating layers, and semiconductor elements are formed respectively in a plurality of layers. The opening formed through the upper insulating layer reaches the lower layer of the semiconductor element immediately below the same upper insulating layer, and is formed at a position spaced apart horizontally from the opening formed through the lower insulating layer immediately below the same upper insulating layer.

Abstract: A method for producing an imide oligomer soluble in an organic solvent by reacting three components of an aromatic tetracarboxylic acid or its derivative, an aromatic diamine and an end-capping agent, wherein the aromatic diamine is a condensation product of o-ethylamiline with formaldehyde, and the end-capping agent is an ethynyl phthalic acid of the formula: ##STR1## wherein R is a hydrogen atom or a monovalent group selected from the group consisting of an aliphatic group, an alicyclic group and an aromatic group, or its derivative.

Abstract: A sintered silicon oxynitride composition comprises as an amount of starting material the combination of (a) a silicon component comprising silicon nitride(Si.sub.3 N.sub.4) and silicon oxide(SiO.sub.2) in a mol ratio of SiO.sub.2 /Si.sub.3 N.sub.4 being 0.7 to 1.2, and (b) at least one second component selected from an aluminum oxide, an aluminum nitride, a rare earth oxide, and a rare earth nitride, said second component being in an amount of from about 0.1 to 10 mol per 100 mol of said silicon component.

Abstract: A modifying agent for a conductive substrate comprises a flavin derivative. A flavin-modified electrode obtained through modification by the modifying agent is capable of reducing an electron transfer protein having a standard oxidation-reduction potential higher than, or on the positive side of, the standard oxidation-reduction potential of the flavin derivative but is incapable of oxidizing the electron transfer protein, and is therefor capable of controlling electron transport so that the electron transport takes place in only one direction. With this characteristic feature, the modified electrode is applicable to functional devices such as diodes, transistors and optical switch devices.

Abstract: A diacetylene compound of the formula: ##STR1## wherein X is a hydroxyl group, a halogen atom, an alkoxy group, a monovalent hydrocarbon group having from 1 to 20 carbon atoms or a --OM group wherein M is an alkali metal, and each of Y.sub.1 and Y.sub.2 which may be the same or different is a hydrogen atom, a monovalent organic group having from 1 to 20 carbon atoms or a halogen atom.Further described a process for producing a polymer containing diacetylene group in its main chain using a diacetylene compound of the above.

Abstract: In a method of manufacturing a semiconductor device comprising melting an amorphous or polycrystalline first semiconductor layer formed on the surface of a first dielectric layer by irradiating energy rays thereon, and converting the same into single crystals by the subsequent lowering of the temperature and forming a second dielectric layer and a second semiconductor layer on the first semiconductor layer. Energy rays are irradiated under the condition capable of melting the first semiconductor layer through the second semiconductor layer and the second dielectric layer and, after the completion of the conversion into single crystals, the second semiconductor layer and the second dielectric layer are eliminated through etching.

Abstract: A method of manufacturing a semiconductor crystalline layer comprising the following steps: a step of forming, on a single crystalline substrate composed of a semiconductor having a main face on <001> face and having a diamond-type crystal structure, an orientation flat face in which the direction of the intersection with the main face makes a predetermined angle relative to the direction <110> on the main face and which serves as a reference for defining the direction of arranging semiconductor chips formed on the substrate; a step of forming, on the main face of the substrate, an insulation layer at least a portion of which has an opening reaching the main face and which insulates the substrate at the region other than the opening; a step of forming a semiconductor layer composed of a polycrystalline or amorphous semiconductor on the surface of the opening and the insulation layer; a step of forming a reflectivity varying layer which is in the direction in parallel with or vertical to the inters

Abstract: The present invention relates to a method for producing a semiconductor thin film, in which a single crystalline silicon film is grown on an insulative single crystalline substrate, such as a single crystalline sapphire substrate, by the molecular beam epitaxy method. Silicon molecular beams are irradiated onto the substrate under the conditions wherein a substrate temperature is kept at 700.degree. to 900.degree. C. and an intensity of the molecular beams is kept within a range from 1.times.10.sup.12 atoms/cm.sup.2 .multidot.sec to 1.times.10.sup.13 atoms/cm.sup.2 .multidot.sec to clean a surface of the substrate and then the intensity of the molecular beams is increased to form the single crystalline silicon film. Thus, the substrate can be cleaned without being defected.

Abstract: A carbon film having a large electrical conductivity is produced at a comparatively low substrate temperature by a method comprising forming the carbon film from a hydrocarbon by an ion beam method and heating the substrate at a temperature of 400.degree. C. to 1,200.degree. C.