Abstract: A photoresist-removing composition includes a polar organic solvent, an alkyl ammonium hydroxide, an aliphatic amine not including a hydroxy group, and a monovalent alcohol. To manufacture a semiconductor device, a photoresist pattern may be formed on a substrate, and the photoresist-removing composition may then be applied to the photoresist pattern. To manufacture a semiconductor package, a photoresist pattern including a plurality of via holes may be formed on a substrate. A plurality of conductive posts including a metal may be formed inside the plurality of via holes, and the photoresist pattern may be removed by applying a photoresist-removing composition of the inventive concept to the photoresist pattern. A semiconductor chip may be adhered to the substrate between the respective conductive posts.
Type:
Application
Filed:
January 6, 2022
Publication date:
November 3, 2022
Applicant:
KPX Chemical Co., Ltd
Inventors:
HYOJIN YUN, Seungwon Kim, Taeyoung Kim, Woojung Park, Jinhye Bae, Hyunseop Shin, Mintae Lee, Hoon Han, Moonyoung Kim, Moonchang Kim, Cheolmo Yang, Yunseok Choi
Abstract: A method of manufacturing a polishing pad includes producing an urethane prepolymer having a viscosity of 20,000 cps (at 25° C.) to 40,000 cps (at 25° C.) by mixing a plurality of polymers, mixing the urethane prepolymer with an inert gas and a low-boiling blowing agent having a boiling point of 60° C. to 150° C., and manufacturing a polishing layer including porous pores by causing a mixture produced at the mixing to be subjected to gelation and curing in a predetermined cast.
Type:
Grant
Filed:
April 6, 2016
Date of Patent:
October 29, 2019
Assignee:
KPX CHEMICAL CO., LTD.
Inventors:
Seung-Geun Kim, Hak-Su Kang, Jeong-Seon Choo, Dae-Han Jung, Gi-Young Park
Abstract: A method of manufacturing a polishing pad includes producing an urethane prepolymer having a viscosity of 20,000 cps (at 25° C.) to 40,000 cps (at 25° C.) by mixing a plurality of polymers, mixing the urethane prepolymer with an inert gas and a low-boiling blowing agent having a boiling point of 60° C. to 150° C., and manufacturing a polishing layer including porous pores by causing a mixture produced at the mixing to be subjected to gelation and curing in a predetermined cast.
Type:
Grant
Filed:
April 6, 2016
Date of Patent:
September 24, 2019
Assignee:
KPX CHEMICAL CO., LTD.
Inventors:
Seung-Geun Kim, Hak-Su Kang, Jeong-Seon Choo, Dae-Han Jung, Gi-Young Park
Abstract: Polishing pad and method of manufacturing the same, the method including: (a) mixing materials for forming a polishing layer; (b) mixing at least two from among inert gas, a capsule type foaming agent, a chemical foaming agent, and liquid microelements that are capable of controlling sizes of pores, with the mixture in (a) so as to form two or more types of pores; (c) performing gelling and hardening of the mixture generated in (b) so as to form a polishing layer including the two or more types of pores; and (d) processing the polishing layer so as to distribute micropores defined by opening the two or more types of pores on a surface of the polishing layer.
Type:
Application
Filed:
February 7, 2013
Publication date:
August 22, 2013
Applicants:
SAMSUNG ELECTRONICS CO., LTD., KPX CHEMICAL CO., LTD.
Inventors:
KPX CHEMICAL CO., LTD., SAMSUNG ELECTRONICS CO., LTD.