Abstract: A method of fabrication of electrical contact structures on a semiconductor material includes depositing an oxide of a desired contact material by a chemical electroless process on a face of the semiconductor material and reducing the oxide via a chemical electroless process to produce a contact of the desired contact material. A method of fabrication of a semiconductor device incorporating such electrical contact structures and a semiconductor device incorporating such electrical contact structures are also described.

Abstract: A method of and device for processing a radiation pulse are described based on: detecting an event at the detector; producing a pulse; determining for the pulse: a pulse height measurement representative of pulse magnitude; a pulse width measurement representative of pulse duration; assigning the pulse to one of at least two classes based on the determined pulse height/pulse width; applying to each pulse an algorithm specific to its particular class to produce an output pulse height/pulse width profile.

Abstract: A method of and apparatus for obtaining radiation transmission data and especially an image of an object in such manner that allows some data about relative proportions of constituent materials to be derived is described. A radiation source and a radiation detector system able to resolve transmitted intensity across a plurality of frequencies within the spectrum of the source are used to produce transmitted intensity data for each such frequency. Measured data is compared numerically to a mass attenuation data library storing mass attenuation data, individually or collectively, for a small number of expected constituent component materials to fit each intensity data item to the relationship given by the exponential attenuation law: I/Io=exp[?(?/?)?t] in respect of the constituent component materials and derive therefrom an indication of relative proportions of each constituent component material. An image may be generated from the resolved transmitted intensity data.

Abstract: A method and apparatus are described for the collection and interpretation of radiographic data from an object scanned by a suitable radiation source. A radiation detector system is provided that is detecting and collecting spectroscopically resolved information. An object is scanned from a plurality of perspectives, and the resultant data from each perspective resolved into at least three spectroscopic energy bands. For each such resolved spectroscopic energy band an image analysis is performed to derive depth slicing to produce a series of output datasets each comprising a 2-D dataset of intensity information resolved to a single energy band and depth slice.

Abstract: A method of and apparatus for obtaining radiation interaction data related to an image of an object. The method involves using a detector system for detecting and collecting spectroscopically resolvable information about incident radiation, and collecting one or more datasets of information at the detector after interaction with an object. Each dataset is resolved across at least three frequency bands within the spectrum of the source. The ratio between measured intensities is evaluated for at least two pairs of such frequency bands in a given intensity dataset to obtain a numerical indicator in functional relationship with a material property. The numerical indicator is then compared with a library of data characteristics of target materials. An apparatus is also disclosed for inspection of materials.

Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.

Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.